An apparatus includes a lithium niobate (LN) layer, and a planar electro-optical modulator having at least one hybrid optical core segment formed of a portion of the LN layer and an optical guiding rib. The optical guiding rib may be located in a top silicon layer of a silicon photonics (SiP) chip, to which a thin-film LN chip is flip-chip mounted, and may be coupled to optical waveguide cores in a first silicon core layer of the SiP chip. One or more drive electrodes are disposed between a substrate of the SiP chip and the LN layer. In some embodiments hybrid optical core segments may include silicon nitride core segments and may form an MZM configured to be differentially or dual-differentially driven.

Semiconductor device includes light-emitting die and semiconductor package. Light emitting die includes substrate and first conductive pad. Substrate has emission region located at side surface. First conductive pad is located at bottom surface of substrate. Semiconductor package includes semiconductor-on-insulator substrate, interconnection structure, second conductive pad, and through semiconductor via. Semiconductor-on-insulator substrate has linear waveguide formed therein. Interconnection structure is disposed on semiconductor-on-insulator substrate. Edge coupler is embedded within interconnection structure and is connected to linear waveguide. Semiconductor-on-insulator substrate and interconnection structure include recess in which light-emitting die is disposed. Edge coupler is located close to sidewall of recess. Second conductive pad is located at bottom of recess. Through semiconductor via extends across semiconductor-on-insulator substrate to contact second conductive pad. First conductive pad is connected to through semiconductor via. Emission region directly faces sidewall of recess where edge coupler is located.

A waveguide element includes a first waveguide and a second waveguide. The first waveguide includes a first main rib and a first slab that has a smaller thickness than that of the first main rib and in which a slab mode of light propagates. The second waveguide includes a second main rib that is optically coupled with the first main rib and in which the light propagates, a second slab that has a smaller thickness than that of the second main rib, that is optically coupled with the first slab, and in which the slab mode propagates, and a side rib that has a larger thickness than that of the second slab. The slab mode that propagates through the second slab transitions to the side rib in accordance with travel of the light that propagates in the first main rib and the second main rib.

A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.

A method of forming a semiconductor structure includes: providing an initial substrate having a first region and a second region; forming a first substrate on the initial substrate; forming a first insulating layer on the first substrate; forming a second substrate on the first insulating layer; removing the second substrate in the second region to form a second insulating layer on the first insulating layer in the second region; and forming a plurality of passive devices on the second insulating layer in the second region and forming a plurality of active devices on the second substrate in the first region.

Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.

The present disclosure relates to semiconductor structures and, more particularly, to a moisture seal for photonic devices and methods of manufacture. The structure includes: a first trench in at least one substrate material; a guard ring structure with an opening and which at least partially surrounds the first trench; and a second trench at a dicing edge of the substrate, the second trench being lined on sidewalls with barrier material and spacer material over the barrier material.

A three-port silicon beam splitter chip includes an input waveguide, three output waveguides, and a coupling region disposed between the input waveguide and the output waveguides and being in a square shape. The input waveguide and the output waveguide have a same width K, where 490 nm<K<510 nm, the coupling region, the input waveguide and the output waveguide have a same thickness H, where 210 nm<H<230 nm, and the coupling region has a length L, where 1600 nm<L<2000 nm. The three-port silicon beam splitter chip of the present disclosure has a high integration degree and a small size, and is capable of improving the portability of the wavefront reconstruction device.

A photonic circulator deployed on a chip-scale light-detection and ranging (LiDAR) device includes a first arm that includes a first waveguide that is bonded onto a first member at a first bonding region, and a second arm that includes a second waveguide that is bonded onto a second member at a second bonding region. A first thermo-optic phase shifter is arranged on the first member and collocated with the first waveguide, and a second thermo-optic phase shifter is arranged on the second member and collocated with the second waveguide. The magneto-optic material and the first thermo-optic phase shifter of the first member cause a first phase shift in a first light beam travelling through the first waveguide, and the magneto-optic material and the second thermo-optic phase shifter of the second member cause a second phase shift in a second light beam travelling through the second waveguide.

An optical coupler includes a substrate, a mirror layer, a plurality of coupling gratings, a plurality of waveguides, and an oxide layer. The substrate includes a first surface, a second surface opposite to the first surface, and a concave portion exposed from the first surface. The mirror layer is disposed in the concave portion. The coupling gratings are disposed above the mirror layer. The waveguides are laterally aligned with the coupling gratings. The concave portion faces both the coupling gratings and the waveguides. The oxide layer is bonded on the first surface. The coupling gratings and the waveguides are disposed on the oxide layer.