A structure for coupling an optical signal between an integrated circuit photonic structure and an external optical fiber is disclosed as in a method of formation. The coupling structure is sloped relative to a horizontal surface of the photonic structure such that light entering or leaving the photonic structure is substantially normal to its upper surface.

In part, the disclosure relates to an optical coupler. The optical coupler may include two ridge waveguides that include a first waveguide and a second waveguide. One or more segments of the two waveguides extend over a coupling length or other distance. One or more sections of each ridge waveguide is at least partially defined by a set of cross-sectional profiles, a plurality of sections of each ridge waveguide have a width that tapers along a length of the two ridge waveguides. Within the coupling length, a subset of the set of cross-sectional profiles may define a first pair of transition regions and a second pair of transition regions. The coupler may include a coupling region between the two ridge waveguides and spanning at least a section of the coupling length.

A light polarisation converter for a photonic integrated circuit, comprising: a substrate and a waveguide. The substrate comprises a first surface and a second surface. The waveguide comprises a first waveguide portion in contact with the first surface, and a second waveguide portion in contact with the second surface. The second surface is offset from the first surface along a first axis and a second axis. Each axis is perpendicular to a light propagation direction for converting polarisation of the light. The second waveguide portion is offset from the first waveguide portion.

Disclosed is a light guide plate, which relates to the technical field of a liquid crystal display panel. The light guide plate includes a light-emitting surface, a bottom surface, and a light-incoming end surface parallel to the light-emitting surface. The light guide plate further includes a first guide slope, a first end of which intersects the bottom surface and a second end of which intersects the light-incoming end surface. A first angle of greater than 90 degrees is formed between the first guide slope and the bottom surface. In particular, when the first angle is equal to 135 degrees, a total reflection prism is formed on the first guide slope, so that light perpendicular to the light-incoming end surface enters and travels in the light guide plate after a total reflection when the light passes by the first guide slope. A liquid crystal module including the light guide plate is further provided, thereby a lightness and thinness design of the liquid crystal module is realized.

An integrated circuit is described. This integrated circuit includes an optical waveguide defined in a semiconductor layer, and a dielectric optical waveguide disposed on the semiconductor layer and that overlaps a region of the optical waveguide. Moreover, the dielectric optical waveguide includes an optical device (such as a mirror) on a facet separating a first portion of the dielectric optical waveguide and a second portion of the dielectric optical waveguide. The facet may be at an angle relative to a plane of the dielectric optical waveguide and may include a metal layer. During operation, an optical signal conveyed by the optical waveguide is evanescent coupled to the dielectric optical waveguide. Then, the optical signal may be reflected by the optical device. For example, the angle of the facet may be 45, so that the optical signal is reflected normal to the plane of the dielectric optical waveguide.

A structure for coupling an optical signal between an integrated circuit photonic structure and an external optical fiber is disclosed as in a method of formation. The coupling structure is sloped relative to a horizontal surface of the photonic structure such that light entering or leaving the photonic structure is substantially normal to its upper surface.

A structure for coupling an optical signal between an integrated circuit photonic structure and an external optical fiber is disclosed as in a method of formation. The coupling structure is sloped relative to a horizontal surface of the photonic structure such that light entering or leaving the photonic structure is substantially normal to its upper surface.

A method of forming an optical device includes obtaining a wafer having multiple optical device dies that each includes a waveguide. The method also includes forming a facet on the waveguide of different dies. The method further includes separating the dies from the wafer after forming the facets. The dies are separated from the wafer such that the facets are positioned at an edge of the dies.

A light polarisation converter for a photonic integrated circuit, comprising a first layer. The first layer comprises a first surface and a second surface. The second surface is offset from the first surface along a first axis and a second axis. The first axis is perpendicular to the first surface. The second axis is parallel to the first surface. The light polarisation converter comprises a second layer and a waveguide. The waveguide is between, and in contact with, the first layer and the second layer. The waveguide comprises a first waveguide portion in contact with the first surface, and a second waveguide portion in contact with the second surface. The second waveguide portion is offset from the first waveguide portion. The first waveguide portion has a first thickness different to a second thickness of the first waveguide portion. The first thickness and the second thickness are perpendicular the first surface.

A polarisation converter for a photonic integrated circuit. The polarisation converter comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer comprises, when viewed in a cross-sectional plane perpendicular a light propagation axis, a first portion thicker than a second portion. The second semiconductor layer is between, and in contact with, the first semiconductor layer and the third semiconductor layer.