An optoelectronic component including a waveguide, the waveguide comprising an optically active region (OAR), the OAR having an upper and a lower surface; a lower doped region, wherein the lower doped region is located at and/or adjacent to at least a portion of a lower surface of the OAR, and extends laterally outwards from the OAR in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of an upper surface of the OAR, and extends laterally outwards from the OAR in a second direction; and an intrinsic region located between the lower doped region and the upper doped region.

Some embodiments are directed to a method for manufacturing photonic waveguides and to photonic waveguides manufactured by this method.

In order to solve the problem of making optical signals pass at a low loss and low polarization dependence, this optical circuit element is configured from rib-type optical waveguides, each of which is configured from a core region, including a planar slab and protruding ribs, and cladding regions that are provided in contact with the top and the bottom of the core region. A first optical waveguide that is provided in the optical circuit element is provided with a plurality of intersection points where the first optical waveguide intersects optical waveguides other than the first optical waveguide, said intersection points being disposed on one straight line. The core width of the first optical waveguide in a region between the intersection points is larger than the core width of the first optical waveguide in regions other than the region between the intersection points, the first optical waveguide regions having different core widths are connected by means of a taper optical waveguide wherein the core width monotonously changes, and the thickness of the slab of the first optical waveguide in the region having the large core width is larger than the thickness of the slab of the first optical waveguide in the regions other than the region having the large core width.

A method of co-manufacturing silicon waveguides, SiN waveguides, and semiconductor structures in a photonic integrated circuit. A silicon waveguide structure can be formed using a suitable process, after which it is buried in a cladding. The cladding is polished, and a silicon nitride layer is disposed to define a silicon nitride waveguide. The silicon nitride waveguide is buried in a cladding, and annealed. Thereafter, cladding above the silicon waveguide structure can be trenched through, and low-temperature operations can be performed to or with an exposed surface of the silicon waveguide structure.

The invention relates, inter alia, to a photonically integrated chip (2) having a substrate (20), a plurality of material layers arranged on a top side (21) of the substrate (20), an optical waveguide which is integrated in one or more wave-guiding material layers of the chip (2), and a grating coupler (60) which is formed in the optical waveguide and causes beam deflection of radiation guided in the waveguide in the direction out of the layer plane of the wave-guiding material layer(s) or causes beam deflection of radiation to be coupled into the waveguide in the direction into the layer plane of the wave-guiding material layer(s).

With respect to the chip, the invention provides for an optical diffraction and refraction structure (100, 100a) to be integrated in a material layer of the chip (2) above or below the optical grating coupler (60) or in a plurality of material layers above or below the optical grating coupler (60) or on the rear side of the substrate (20), which diffraction and refraction structure carries out beam shaping of the radiation before it is coupled into the waveguide or after it has been coupled out of the waveguide.

An optical waveguide which has sufficient orientation characteristics and its manufacturing processes are simple to be suitable for the manufacture of electro-optic elements and that can be reduced the power consumption by its large electro-optic characteristics and further can be thinned and stacked, and the material thereof. This material is characterized in a polymer compound that includes an oxazoline structure in a side chain, and an acid generator or a polyvalent carboxylic acid.

An integrated wavelength division multiplexer is described. The integrated wavelength division multiplexer may include a first waveguide core defining a first propagation axis and configured to guide light of a first wavelength and light of a second wavelength, and a second waveguide core defining a second propagation axis and configured to guide the light of the second wavelength. A first portion of the second propagation axis for which the first waveguide core and second waveguide core may be overlapping is oriented at a non-zero angle relative to the first propagation axis. The first waveguide core and second waveguide core may be configured relative to each other to adiabatically couple the light of the second wavelength between the first and second waveguide cores.

Electro-optic devices for classical and quantum microwave photonics are provided. In various embodiments, a device comprises: a waveguide; a first ring resonator; a second ring resonator, the second ring resonator evanescently coupled to the first ring resonator and to the waveguide; a first pair of electrodes, one of the first pair of electrodes disposed within the first ring resonator and the other of the first pair of electrodes disposed without the first ring resonator; a second pair of electrodes, one of the second pair of electrodes disposed within the second ring resonator and the other of the second pair of electrodes disposed without the second ring resonator; a microwave source electrically coupled to the first and second pairs of electrodes; a bias port electrically coupled to the first and second pairs of electrodes and configured to sweep a frequency band.

Integrated optical devices and methods of forming the same are disclosed. A method of forming an integrated optical device includes the following steps. A substrate is provided. The substrate includes, from bottom to top, a first semiconductor layer, an insulating layer and a second semiconductor layer. The second semiconductor layer is patterned to form a waveguide pattern. A surface smoothing treatment is performed to the waveguide pattern until a surface roughness Rz of the waveguide pattern is equal to or less than a desired value. A cladding layer is formed over the waveguide pattern.

A photonic integrated circuit including an InP-based substrate that is provided with a first InP-based optical waveguide and a neighboring second InP-based optical waveguide, a dielectric planarization layer that is arranged at least between the first optical waveguide and the second optical waveguide. At least between the first optical waveguide and the neighboring second optical waveguide, the dielectric planarization layer is provided with a recess that is arranged to reduce or prevent optical interaction between the first optical waveguide and the second optical waveguide via the dielectric planarization layer. At the location of the recess, the dielectric planarization layer has a first sidewall that is arranged sloped towards the first optical waveguide, and a second sidewall that is arranged sloped towards the second optical waveguide. An opto-electronic system including said PIC.