G02B2006/121

THERMALLY-CONDUCTIVE FEATURES POSITIONED ADJACENT TO AN OPTICAL COMPONENT
20230266530 · 2023-08-24 ·

Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes an optical component having a waveguide core, and multiple features positioned adjacent to the waveguide core. The waveguide core contains a first material having a first thermal conductivity, and the features contain a second material having a second thermal conductivity that is greater than the first thermal conductivity.

Germanium-on-silicon laser in CMOS technology

A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

REFRACTIVE INDEX CONTRAST POLYMERS AND METHODS FOR PRODUCING AND USING THE SAME

The present invention is directed to refractive index contrast (“RIC”) polymers and methods for producing and using the same. In one particular embodiment, RIC polymers of the invention can be used as waveguides. RIC polymers of the invention are produced from a monomeric mixture comprising a first monomer and a second monomer comprising an acid-labile protecting group, where a first polymer produced from the first monomer has a different refractive index compared to the refractive index of a second polymer produced from the second monomer. The base refractive index of RIC polymers can be tuned by controlling the amount of the first and the second monomers. Furthermore, the refractive index of the waveguide can be modulated by the amount of acid-labile protecting group removal.

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
20230258866 · 2023-08-17 ·

In accordance with an embodiment, a method for manufacturing a semiconductor device includes forming a first front layer and a first rear layer of a first material respectively on a front main face and a rear main face of a semiconductor substrate wafer; forming a first plurality of trenches and a second plurality of trenches respectively in a surface of the first front layer and in a surface of the first rear layer; forming a second front layer of a second material on the first front layer, where the second front layer extends over the first front layer, in the first plurality of trenches, and between the first plurality of trenches on the surface of the first front layer; and forming a second rear layer of the second material on the surface of the first rear layer, wherein the second rear layer extends over the first rear layer, in the second plurality of trenches, and between the second plurality of trenches on the surface of the first rear layer.

Bandpass transmission filter and narrowband radiation source

In accordance with an embodiment, a bandpass transmission filter having a center wavelength of transmission includes: a waveguide structure comprising a grating structure having changing grating pitch values configured to diffract radiation in the waveguide structure having a first wavelength lower than the center wavelength of transmission, and configured to reflect radiation in the waveguide structure having a second wavelength higher than the center wavelength of transmission; and a radiation absorbing structure configured to absorb radiation guided by the waveguide structure having a third wavelength higher than the second wavelength, wherein the radiation absorbing structure is an integrated part of the waveguide structure or comprises a layer arranged adjacent to the waveguide structure.

Optical Circuit
20230251422 · 2023-08-10 ·

An optical circuit including an optical waveguide including temperature compensation structure filled with a temperature compensation material, the optical circuit including adiabatic transition structure in which an optical wave propagating through the optical waveguide adiabatically transitions to the temperature compensation structure filled with the temperature compensation material.

END-FACE COUPLING STRUCTURES WITHIN ELECTRICAL BACKEND
20230244031 · 2023-08-03 ·

End-face coupling structures within an electrical backend are provided via photonic integrated circuit (PIC), comprising: a first plurality of spacer layers; a second plurality of etch-stop layers, wherein each etch-stop layer of the second plurality of etch-stop layers is located between two spacer layers of the first plurality of spacer layers; and an optical coupler comprising a plurality of waveguides arranged as a waveguide array configured to receive an optical signal in a direction of travel, wherein each waveguide of the plurality of waveguides is located at a layer interface defined between an etch-stop layer and a spacer layer. Portions of the PIC can be formed by depositing layers of spacer and etch-stop materials in which cavities are formed to define the waveguides when the waveguide material is deposited or interconnects when a metal is deposited therein.

OPTICAL DEVICE, SUBSTRATE TYPE OPTICAL WAVEGUIDE ELEMENT, OPTICAL COMMUNICATION APPARATUS, AND INTER-WAVEGUIDE TRANSITION METHOD
20230244032 · 2023-08-03 · ·

An optical device includes a transition unit in which a first waveguide and a second waveguide are disposed in an overlapped manner such that a magnitude relationship of an effective refractive index between the vertical modes propagating the first waveguide and the vertical modes propagating the second waveguide is inverted at the positions of input and output. The transition unit allows, at the input, the second waveguide to be a single mode waveguide and allows, at the output, the second waveguide to be a multi-mode waveguide through which TM0 light in the maximum vertical mode and light in a higher-order mode propagate. The optical device includes a removing unit that allows the second waveguide to be a single mode waveguide through which the TM0 light propagates by removing the light in the higher-order mode from the light received from the transition unit.

Waveguide manufacturing process

The invention relates to a method for manufacturing a waveguide (2a, 2b) comprising: A supplying of a substrate (1) comprising a stack of a first layer (11) based on a first material on a second layer (12) based on a second material, and at least one sequence successively comprising: An etching of the first material, in such a way as to define at least one pattern (20, 22a) having etching flanks (200, 201), A smoothing annealing assisted by hydrogen in such a way as to smooth the etching flanks (200, 201) of the at least one pattern (20, 22a), A re-epitaxy of the first material on the pattern (20, 22a) based on the first material.

OPTICAL DEVICE, PHOTODETECTION SYSTEM, AND METHOD FOR MANUFACTURING THE SAME
20220011404 · 2022-01-13 ·

An optical device includes a first substrate having a first surface, a second substrate having a second surface, at least one optical waveguide, and a plurality of spacers, disposed on at least either the first surface or the second surface, that include a first portion and a second portion. The first portion of the plurality of elastic spacers is at least one elastic spacer located in a region between the first substrate and the second substrate in which the first substrate and the second substrate overlap each other as seen from an angle parallel with a direction perpendicular to the first surface. The second portion of the plurality of elastic spacers is at least one elastic spacer located in a region in which the first substrate and the second substrate do not overlap each other as seen from an angle parallel with the direction perpendicular to the first surface.