An optical waveguide device includes a wiring substrate, a first cladding layer formed on the wiring substrate, a base protective layer formed on the first cladding layer and formed into a certain pattern, a core layer formed on the first cladding layer and the base protective layer, a recess portion having an inclined surface and formed from the core layer to the base protective layer, an optical path conversion mirror formed on the inclined surface, and a second cladding layer formed on the first cladding layer and the core layer. A refractive index of the base protective layer is smaller than a refractive index of the core layer. A width of the base protective layer is equal to or greater than a width of the core layer.

In various embodiments, the beam parameter product and/or numerical aperture of a laser beam is adjusted utilizing a step-clad optical fiber having a central core, a first cladding, an annular core, and a second cladding.

Periscope assemblies are provided which have a light path that travels in a first plane along the first waveguide, a second plane along the second waveguide that is parallel to the first plane, and along a third plane along the third waveguide that intersects the first plane and the second plane. In some examples the periscope assembly includes first and second carriers comprising respective first and second waveguides and defining respective first and second cavities in which a third carrier comprising a third waveguide is disposed and optionally includes an optical component. In some examples, the cavities are defined in one or more carriers on a mating surface, on a side opposite to the mating surface, or on a side perpendicular to a mating surface.

A semiconductor device includes a substrate, a trench in the substrate, the trench having an inclined sidewall, a reflective layer over the inclined sidewall, a grating structure over the substrate, and a waveguide in the trench. The waveguide is configured to guide optical signals between the grating structure and the reflective layer.

A novel optical assembly apparatus for coupling optical energy and a related method for creating the novel optical assembly apparatus are disclosed. In one embodiment, the novel optical assembly apparatus includes a high-index contrast waveguide constructed on a semiconductor die or another base substrate with an aligned optical coupling section, a grating coupler etched onto a surface, a micro mirror with an acute angle relative to the surface, and a waveguide taper that narrows an optical beam width. A light ray entered into the optical coupling section is redirected by the micro mirror to form a perpendicular ray entry angle with the grating coupler. The grating coupler then efficiently couples the light ray with the waveguide taper, which in turn narrows the optical beam width. The light ray may originate from a semiconductor die or from an optical fiber, which is purposefully aligned with the high-index contrast waveguide.

The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to semiconductor devices having a reflector and a photonic component and a method of forming the same. The present disclosure provides a semiconductor device having a substrate, a photonic component arranged above the substrate, a bottom reflector arranged above the substrate and positioned below the photonic component, in which the bottom reflector has a plurality of grating structures configured to reflect electromagnetic waves towards the photonic component, and a top reflector arranged above the photonic component, in which the top reflector has a plurality of grating structures configured to reflect electromagnetic waves towards the photonic component.

A photonic integrated circuit is presented that includes a substrate, and a first and second waveguide patterned on the substrate. The first waveguide guides an input beam of radiation. The photonic integrated circuit also includes a coupling region, wherein the first and second waveguides each pass through the coupling region. One or more modulating elements are coupled to each of the first and second waveguides. The first waveguide and the second waveguide have a first facet and a second facet, respectively, and first and second reflections are generated at the first and second facets within the first and second waveguides, respectively. The one or more modulating elements coupled to each of the first and second waveguides are designed to adjust the phase of the first and second reflections before the first and second reflections pass through the coupling region.

A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.

A 400 Gb/s transmitter is integrated on a silicon substrate. The transmitter uses four gain chips, sixteen lasers, four modulators to modulate the sixteen lasers at 25 Gb/s, and four multiplexers to produce four optical outputs. Each optical output can transmit at 100 Gb/s to produce a 400 Gb/s transmitter. Other variations are also described.

A photonic device includes a semiconductor wafer having a waveguide formed therein. An end of the waveguide includes a step. The photonic device further includes a semiconductor chip bonded to the semiconductor wafer and having an active region, and a waveguide coupler disposed in a gap between a sidewall of the semiconductor chip and the end of the waveguide. The waveguide coupler includes an optical bridge that has a first end and a second end opposing the first end. The first end of the optical bridge is interfaced with a facet of the active region of the semiconductor chip. The second end of the optical bridge is interfaced with the end of waveguide, and has a portion thereof disposed over the step at the end of the waveguide.