High density fiber interfaces for silicon photonics based integrated-optics products are provided via a system or device that includes: a prism configured to reflect, via a lensed reflecting surface, a plurality of optical signals between a first surface and a second surface at a non-normal angle of incidence; a photonic interposer including a plurality of grating couplers corresponding to the plurality of optical signals that are arranged in a two-dimensional array and that are optically connected directly to the first surface of the prism; and a plurality of optical fibers that are arranged in the two-dimensional array and that are optically connected directly to the second surface of the prism.

An occupancy sensor covering a wide field in an integrated chip is disclosed. The occupancy sensor includes an array of grating coupled waveguide sensors wherein continuous wave (cw) signals monitor an ambient light field for dynamic changes on times scales of seconds, and high frequency signals map in three-dimensions of the space using time-of-flight (TOF) measurements, pixel level electronics that perform signal processing; array level electronics that perform additional signal processing; and communications and site level electronics that interface with actuators to respond to occupancy sensing.

An optical device for an optical sensor comprises a gain element of a semiconductor laser, a wavelength selective feedback element, and a sensing element. At least part of the wavelength selective feedback element and the sensing element are arranged in a common sensor package. The gain element is arranged to generate and amplify an optical signal. The gain element and the wavelength selective feedback element form at least part of an external cavity of the semiconductor laser, thereby providing a feedback mechanism to sustain a laser oscillation depending on the optical signal. The wavelength selective feedback element is arranged to couple out a fraction of the optical signal and direct said fraction of the optical signal towards the sensing element to probe a physical property of the sensing element.

The chemical sensing device comprises a substrate of semiconductor material, integrated circuit components and a photodetector formed in the substrate, a dielectric on the substrate, a wiring in the dielectric, and a source of electromagnetic radiation, a waveguide and a fluorescent sensor layer arranged in or above the dielectric. A portion of the waveguide is arranged to allow the electromagnetic radiation emitted by the source of electromagnetic radiation to be coupled into the waveguide. A further portion of the waveguide is arranged between the photodetector and the fluorescent sensor layer.

In one embodiment, a silicon photonic integrated circuit (PIC) includes a pair of Mach-Zehnder Interferometers (MZI) with a phase shifter to function as a 1x2 optical switches. On one path between the MZIs is a wavelength interleaver. The MZI switch can be controlled to either an all-pass mode or a by-pass mode, therefore setting configurable optical demultiplexing bandwidths to support dual 1.6 T FR8/800G FR4 network backward compatibility. The configurable multiplexer operates at set-and-forget mode for the entire operating temperature and the product’s lifetime.

There is set forth herein a photonics device. The photonics device can comprise a substrate, a conductive material formation, a dielectric stack, and a barrier layer. The photonics device can transmit a light signal.

An optical waveguide includes a first waveguide core, a second waveguide core, a first subwavelength multilayer cladding, a second subwavelength multilayer cladding and a third subwavelength multilayer cladding. The first waveguide core and the second waveguide core have a width (w) and a height (h). The first waveguide core is disposed between the first subwavelength multilayer cladding and the second subwavelength multilayer cladding. The second waveguide core is disposed between the second subwavelength multilayer cladding and the third subwavelength multilayer cladding. Each subwavelength multilayer cladding has a number (TV) of alternating subwavelength ridges having a periodicy (A) and a filling fraction (p). A total coupling coefficient (|/c|) of the first waveguide core and the second waveguide core is from 10 to 0.

Fabrication-tolerant on-chip multiplexers and demultiplexers are provides via a lattice filter interleaver configured to receive an input signal including a plurality of individual signals and to produce a first interleaved signal with a first subset of the plurality of individual signals and a second interleaved signal with a second subset of the plurality of individual signals; a first Bragg interleaver configured to receive the first interleaved signal and produce a first output signal including a first individual signal of the plurality of individual signals and a second output signal including a second individual signal of the plurality of individual signals; and a second Bragg interleaver configured to receive the second interleaved signal and produce a third output signal including a third individual signal of the plurality of individual signals and a fourth output signal including a fourth individual signal of the plurality of individual signals.

An apparatus comprises: a photonic integrated circuit comprising an optical phased array, a first focusing element at a fixed position relative to the optical phased array and configured to couple an optical beam to or from the optical phased array, and a second focusing element at a fixed position relative to the first focusing element and configured to couple the optical beam to or from the first focusing element. At least one of the first or second focusing element is externally coupled to the photonic integrated circuit, and the first and second focusing elements have different effective focal lengths.

Disclosed are edge couplers having a high coupling efficiency and low polarization dependent loss, and methods of making the edge couplers. In one embodiment, a semiconductor device for optical coupling is disclosed. The semiconductor device includes: a substrate; an optical waveguide over the substrate; and a plurality of layers over the optical waveguide. The plurality of layers includes a plurality of coupling pillars disposed at an edge of the semiconductor device. The plurality of coupling pillars form an edge coupler configured for optically coupling the optical waveguide to an optical fiber placed at the edge of the semiconductor device.