Avalanche photodetector devices are disclosed in which spatial asymmetry is employed to preferentially enhance avalanche multiplication of electrons. In some example embodiments, an avalanche photodetector device includes p-doped and n-doped regions and a central waveguide region, where the p-doped region is laterally offset from the central waveguide by a first lateral offset region, and where the n-doped region is laterally offset from the central waveguide by a second lateral offset region. The first and second lateral offset regions are asymmetrically defined such that impact ionization and avalanche multiplication of electrons in the second laterally offset region is enhanced relative to that of holes in the first laterally offset region. In some example implementations, the asymmetry may be provided by a difference in relative heights and/or lateral spatial extends (widths) of the lateral offset regions, such that the electric field, or a spatial extent associated therewith, is enhanced for electrons.

A device, includes: a ring waveguide; a diode comprising a junction extending at least partly in the ring waveguide; and a first circuit configured to supply a signal representative of a leakage current in the diode.

The present disclosure provides a light detecting device. The light detecting devices includes an insulating layer, a silicon layer, a light detecting layer, N first doped regions and M second doped regions. The silicon layer is disposed over the insulating layer. The light detecting layer is disposed over the silicon layer and extends within at least a portion of the silicon layer. The first doped regions have a first dopant type and are disposed within the light detecting layer. The second doped regions have a second dopant type and are disposed within the light detecting layer. The first doped regions and the second doped regions are alternatingly arranged. M and N are integers equal to or greater than 2.

Provided are a single-photon source device and a single-photon source system including same. The single-photon source device includes a substrate, a straight waveguide extending in a first direction on the substrate, a first coupling layer which is provided on the straight waveguide and has a first point defect, at least one first electrode which is adjacent to the first point defect and provided on the first coupling layer, a ring waveguide which is adjacent to the straight waveguide and provided on the substrate, and at least one second electrode provided on the ring waveguide.

Consistent with the present disclosure, a DDR photodiode is provided on a substrate adjacent to a passive waveguide. In order to efficiently capture light output from the waveguide, the photodiode is coupled to the waveguide with a butt-joint. As a result, the photodiode and the waveguide abut one another such that the dominant mode of light propagating in the waveguide parallel to the substrate is supplied directly to a side of the absorber layer of the photodiode without, in one example, evanescent coupling, nor is a resonant coupler required to supply light to the photodiode. Thus, light is absorbed more efficiently in the photodiode such that the photodiode may have a shorter length. In addition, since substantially all light is input to the photodiode, nearly complete absorption and nearly ideal quantum efficiency can be achieved in a relatively short length. Further, the improved linearity associated with DDR photodiodes is preserved with the exemplary butt joint configurations disclosed herein.

The present invention includes an integrated system-on-chip device configured on a substrate member. The device has a data input/output interface provided on the substrate member and configured for a predefined data rate and protocol. The device has an input/output block provided on the substrate member and coupled to the data input/output interface. The input/output block comprises a SerDes block, a CDR block, a compensation block, and an equalizer block. The SerDes block is configured to convert a first data stream of N having a first predefined data rate at a first clock rate into a second data stream of M having a second predefined data rate at a second clock rate. The device has a driver module provided on the substrate member and coupled to a signal processing block, and a driver interface provided on the substrate member and coupled to the driver module and a silicon photonics device.

A silicon photonics integrated chip includes the transmit-input waveguide unit, the splitter unit, the modulator unit, the transmit-output waveguide unit, the receive-input waveguide unit and the receiving detector unit integrated inside the chip. A silicon photonics multi-channel parallel optical component and a coupling method of the silicon photonics multi-channel parallel optical component are also provided. The integrated silicon photonics chip is adopted, the transmitting part still uses two-way DC laser group, the receiving chip is integrated inside the silicon photonics chip, and the optical interface adopts the mature FA-MPO in the industry. It has the advantages of mature technology, high degree of integration, relatively low cost, fewer coupling processes, etc., it is one of the advantageous choices for rates above 400 G.

A Semiconductor device includes an insulating layer, an optical waveguide, a first dummy semiconductor film, a second semiconductor film and a third semiconductor film. The optical waveguide is formed on the insulating layer. The first dummy semiconductor film is formed on the insulating layer and is spaced apart from the optical waveguide. The first dummy semiconductor film is formed on the first semiconductor film. The second semiconductor film is integrally formed with the optical waveguide as a single member on the insulating layer. The third semiconductor film is formed on the second semiconductor film. A material of the first dummy semiconductor film is different from a material of the optical waveguide. In plan view, a distance between the optical waveguide and the first dummy semiconductor film in a first direction perpendicular to an extending direction of the optical waveguide is greater than a thickness of the insulating layer.

A waveguide photoelectric detector, comprising: a substrate comprising a silicon layer, the silicon layer having a silicon waveguide formed thereon; an active layer dispose on the silicon waveguide, the active layer having a first doped region formed thereon; a horizontal PIN junction formed at an area of the silicon layer below the active layer, the horizontal PIN junction comprising a second doped region, an intrinsic region, and a third doped region. A doping type of the second doped region is the same as that of the first doped region. One end of the second doped region near the intrinsic region is connected to the first doped region. The third doped region and the first doped region form a vertical PIN junction.

Integrated-optics systems are presented in which an active-material stack is disposed on a coupling layer in a first region to collectively define an OA waveguide that supports an optical mode of a light signal. The coupling layer is patterned to define a coupling waveguide and a passive waveguide, which are formed as two abutting, optically coupled segments of the coupling layer. The lateral dimensions of the active-material stack are configured to control the shape and vertical position of the optical mode at any location along the length of the OA waveguide. The active-material stack includes a taper that narrows along its length such that the optical mode is located completely in the coupling waveguide where the coupling waveguide abuts the passive waveguide. In some embodiments, the passive layer is optically coupled with the OA waveguide and a silicon waveguide, thereby enabling light to propagate between them.