A waveguide structure (IOO) for a photonic integrated circuit, comprising: a substrate; an active region (102) comprising a diode junction, the active region comprising: a light emission portion (102a) to emit light in a first direction and a second direction perpendicular the first direction; and a light absorption portion (102b) to absorb light emitted from the light emission portion (102a) in the second direction; a first contact corresponding to the light emission portion (102a); and a second contact corresponding to the light absorption portion (102b).

With a wavelength conversion device based on a nonlinear optical effect, when arrayed waveguides including an intended nonlinear waveguide are fabricated, unwanted slab waveguides are inevitably formed. The slab waveguides can cause an erroneous measurement in the selection of a waveguide having desired characteristics from the arrayed waveguides. The erroneous measurement can lead to redoing steps for fabricating the wavelength conversion device and a decrease in the yield and inhibit the evaluation of the characteristics in selection of the waveguide and the subsequent fabrication of the wavelength conversion device from being efficiently performed. A wavelength conversion device according to the present invention includes a plurality of waveguides formed on a substrate, and a plurality of slab waveguides that are arranged substantially in parallel with and spaced apart from the plurality of waveguides, and a guided light attenuator is formed in each of the slab waveguides. The guided light attenuators allow efficient selection of a waveguide having desired optical characteristics from the plurality of waveguides. The light attenuation by the guided light attenuators can be changed in steps for fabricating the wavelength conversion device.

The present disclosure relates to semiconductor structures and, more particularly, to waveguide attenuators and methods of manufacture. The structure includes: a main bus waveguide structure; a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material; and a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material.

The present disclosure relates to semiconductor structures and, more particularly, to spiral waveguide absorbers and methods of manufacture. The structure includes: a photonics component; and a waveguide absorber with a grating pattern coupled to a node of the photonics component.

The present disclosure relates to semiconductor structures and, more particularly, to waveguide attenuators and methods of manufacture. The structure includes: a main bus waveguide structure; a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material; and a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material.

The present disclosure relates to semiconductor structures and, more particularly, to a waveguide structure with attenuator and methods of manufacture. The structure includes: a waveguide structure including semiconductor material; an attenuator underneath the waveguide structure; an airgap structure vertically aligned with and underneath the waveguide structure and the attenuator; and shallow trench isolation structures on sides of the waveguide structure and merging with the airgap structure.

The present disclosure relates to semiconductor structures and, more particularly, to multi-mode optical waveguide structures with isolated absorbers and methods of manufacture. The structure includes: a waveguide structure including tapered segments; and at least one isolated waveguide absorber adjacent to the waveguide structure along its length.

The present disclosure relates to semiconductor structures and, more particularly, to spiral waveguide absorbers and methods of manufacture. The structure includes: a photonics component; and a waveguide absorber with a grating pattern coupled to a node of the photonics component.

Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.

With a wavelength conversion device based on a nonlinear optical effect, when arrayed waveguides including an intended nonlinear waveguide are fabricated, unwanted slab waveguides are inevitably formed. The slab waveguides can cause an erroneous measurement in the selection of a waveguide having desired characteristics from the arrayed waveguides. The erroneous measurement can lead to redoing steps for fabricating the wavelength conversion device and a decrease in the yield and inhibit the evaluation of the characteristics in selection of the waveguide and the subsequent fabrication of the wavelength conversion device from being efficiently performed. A wavelength conversion device according to the present invention includes a plurality of waveguides formed on a substrate, and a plurality of slab waveguides that are arranged substantially in parallel with and spaced apart from the plurality of waveguides, and a guided light attenuator is formed in each of the slab waveguides. The guided light attenuators allow efficient selection of a waveguide having desired optical characteristics from the plurality of waveguides. The light attenuation by the guided light attenuators can be changed in steps for fabricating the wavelength conversion device.