The back reflection in photodiodes is caused by an abrupt index contrast between the input waveguide and the composite waveguide/light absorbing material. In order to improve the back reflection, it is proposed to introduce an angle between the waveguide and the leading edge of the light absorbing material. The angle will result in gradually changing the effective index between the index of the waveguide and the index of the composite section, and consequently lower the amount of light reflecting back.

To reduce or eliminate crosstalk between adjacent integrated optical waveguides, an embodiment of an integrated structure includes, between the optical waveguides, a metal isolation region configured to redirect a signal leaking from one waveguide away from the other waveguide, to absorb the leaking signal, or both to redirect and absorb respective portions of the leaking signal. For example, such an integrated structure includes a cladding, first and second optical cores, and a metal isolation region. The optical cores are disposed in the cladding, and the isolation region is disposed in the cladding between, and separate from, the cores. Including a metal isolation region between adjacent optical waveguides can reduce crosstalk between the waveguides more than coating the waveguides with a metal because the metal coating typically is not thick enough to redirect or absorb enough of a leakage signal to reduce crosstalk to a suitable level.

The present disclosure relates to semiconductor structures and, more particularly, to Waveguide absorbers and methods of manufacture are provided. The waveguide structure includes a photonics component and a spirally configured waveguide absorber coupled to a node of the photonics component which reduces optical return loss.

A method for manufacturing a waveguide aperture to block stray light from a facet of an integrated optical device include obtaining a wafer with one or more integrated optical devices formed thereon and with a cleaved facet; positioning a mask in front of the cleaved facet, thereby masking at least a portion of the waveguide aperture of at least one the one or more integrated optical devices; and applying a light-blocking coating to the cleaved facet with the mask masking the portion of each of the one or more integrated optical devices.

A metal-contact-free photodetector includes an optically absorbing material, e.g. germanium, mounted on a device layer of a photonic integrated circuit, which includes a p-type contact and an n-type contact on opposite sides of a waveguide. The contacts are comprise of a plurality of independently doped regions ranging from lowest doped adjacent the waveguide to highest doped remote from the waveguide. An additional element is to add p and/or n doping on one or more of the sidewalls of the optically absorbing material, e.g Germanium. The advantage compared to the previously disclosed metal-contact-free photodetectors is that the bandwidth is much higher, and full speed is attained at lower voltage.

Aspects described herein include an optical apparatus comprising at least a first Bragg grating of a first stage. The first Bragg grating is configured to transmit a first two wavelengths and to reflect a second two wavelengths of a received optical signal. The optical apparatus further comprises a second Bragg grating of a second stage. The second Bragg grating is configured to transmit one of the first two wavelengths and to reflect the other of the first two wavelengths. The optical apparatus further comprises a third Bragg grating of the second stage. The third Bragg grating is configured to transmit one of the second two wavelengths and to reflect the other of the second two wavelengths.

A metal-contact-free photodetector includes an optically absorbing material, e.g. germanium, mounted on a device layer of a photonic integrated circuit, which includes a p-type contact and an n-type contact on opposite sides of a waveguide. The contacts are comprise of a plurality of independently doped regions ranging from lowest doped adjacent the waveguide to highest doped remote from the waveguide. An additional element is to add p and/or n doping on one or more of the sidewalls of the optically absorbing material, e.g Germanium. The advantage compared to the previously disclosed metal-contact-free photodetectors is that the bandwidth is much higher, and full speed is attained at lower voltage.

Aspects described herein include an optical apparatus comprising at least a first Bragg grating of a first stage. The first Bragg grating is configured to transmit a first two wavelengths and to reflect a second two wavelengths of a received optical signal. The optical apparatus further comprises a second Bragg grating of a second stage. The second Bragg grating is configured to transmit one of the first two wavelengths and to reflect the other of the first two wavelengths. The optical apparatus further comprises a third Bragg grating of the second stage. The third Bragg grating is configured to transmit one of the second two wavelengths and to reflect the other of the second two wavelengths.

A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.

Some implementations described herein include a photonics integrated circuit device including a photonics structure. The photonics structure includes a waveguide structure and an optical attenuator structure. In some implementation, the optical attenuator structure is formed on an end region of the waveguide structure and includes a metal material or a doped material. In some implementations, the optical attenuator structure includes a gaussian doping profile within a portion of the waveguide structure. The optical attenuator structure may absorb electromagnetic waves at the end of the waveguide structure with an efficiency that is improved relative to a spiral optical attenuator structure or metal cap optical attenuator structure.