Patent classifications
G02B2006/12135
High-resolution photonic thermometer article
A high-resolution photonic thermometer article performs high-resolution thermometry and includes: a light source; a photonic thermometer with a waveguide and a photonic crystal cavity that stores light; a photodetector in communication with the photonic thermometer; a phase sensitive detector in communication with the photodetector and that: receives the photodetector signal from the photodetector; receives a reference frequency signal; and produces a lock signal from the photodetector signal, based on the reference frequency signal; a local oscillator in communication with the phase sensitive detector and that produces the reference frequency signal; and a servo controller in communication with the phase sensitive detector and local oscillator and that: receives the lock signal from the phase sensitive detector; receives the reference frequency signal from the local oscillator; and produces the control signal such that absorption power of the photonic crystal is maximized through wavelength control of the light source by the control signal.
Optical temperature sensing methods and devices associated with photonic integrated circuits
A photonic integrated circuit (PIC) with embedded optical temperature sensing includes an optical interferometer containing a first arm and a second arm, and one or more optical waveguide sections configured to measure an internal temperature of the PIC. The one or more optical waveguide sections are implemented as one or more sections of the first arm and the second arm. The first arm and the second arm have a first optical path length (OPL) and a second OPL and are made of a first material and a second material, respectively.
Wafer-Level Handle Replacement Processing
A handle-integrated composite wafer assembly includes a handle wafer attached to a device wafer. The device wafer includes a device layer formed on a buried oxide layer. The device layer includes an optical resonator structure. The handle wafer includes a base layer and a layer of anti-reflective material disposed on a top side of the base layer. The base layer has a cavity extending into the base layer from the top side of the base layer. The cavity has at least one side surface and a bottom surface. The layer of anti-reflective material is substantially conformally disposed within the cavity on the at least one side surface and bottom surface of the cavity. The handle wafer is attached to the device wafer with the layer of anti-reflective material affixed to the buried oxide layer, and with the cavity substantially aligned with the optical resonator structure in the device layer.
INTEGRATED TARGET WAVEGUIDE DEVICES AND SYSTEMS FOR OPTICAL COUPLING
Integrated target waveguide devices and optical analytical systems comprising such devices are provided. The target devices include an optical coupler that is optically coupled to an integrated waveguide and that is configured to receive optical input from an optical source through free space, particularly through a low numerical aperture interface. The devices and systems are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The devices provide for the efficient and reliable coupling of optical excitation energy from an optical source to the optical reactions. Optical signals emitted from the reactions can thus be measured with high sensitivity and discrimination. The devices and systems are well suited for miniaturization and high throughput.
Semiconductor Structure Having Group III-V Chiplet on Group IV Substrate and Cavity in Proximity to Heating Element
A semiconductor structure includes a group III-V chiplet over a group IV substrate. A group IV optoelectronic device is situated in the group IV substrate. A patterned group III-V optoelectronic device is situated in the group III-V chiplet. A heating element is near the group IV optoelectronic device, or alternatively, near the patterned group III-V optoelectronic device. A dielectric layer is over the patterned group III-V optoelectronic device. A venting hole is in the dielectric layer in proximity of the heating element. A cavity is in the group IV substrate in proximity to the heating element.
Integrated target waveguide devices and systems for optical coupling
Integrated target waveguide devices and optical analytical systems comprising such devices are provided. The target devices include an optical coupler that is optically coupled to an integrated waveguide and that is configured to receive optical input from an optical source through free space, particularly through a low numerical aperture interface. The devices and systems are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The devices provide for the efficient and reliable coupling of optical excitation energy from an optical source to the optical reactions. Optical signals emitted from the reactions can thus be measured with high sensitivity and discrimination. The devices and systems are well suited for miniaturization and high throughput.
Temperature-stabilized integrated waveguides
Embodiments include a photonic device with a compensation structure. The photonic device includes a waveguide with a refractive index which changes according to the thermo-optic effect as a temperature of the photonic device fluctuates. The compensation structure is positioned on the photonic device to counteract or otherwise alter the thermo-optic effect on the refractive index of the waveguide in order to prevent malfunctions of the photonic device.
Integrated heater structures in a photonic integrated circuit for solder attachment applications
An apparatus including a photonic integrated circuit (PIC) coupled to an optical bench is disclosed. The PIC includes at least one grating coupler disposed thereon and the optical bench includes an optical system disposed thereon. The apparatus also includes an integrated heater at an upper surface of the PIC under the optical bench or at a bottom surface of the optical bench over the PIC. The apparatus also includes a layer of solder disposed between the PIC and the optical bench for coupling the bottom surface of the optical bench to the PIC. In some implementations, the layer of solder is in thermal communication with the integrated heater.
PHOTONICS STABILIZATION CIRCUITRY
Methods and apparatus for tuning a photonics-based component. An opto-electrical detector is configured to output an electrical signal based on a measurement of light intensity of the photonics-based component, the light intensity being proportional to an amount of detuning of the photonics-based component. Analog-to-digital conversion (ADC) circuitry is configured to output a digital signal based on the electrical signal output from the opto-electrical detector. Feedback control circuitry is configured to tune the photonics-based component based, at least in part, on the digital signal output from the ADC circuitry.
Apparatus and methods for accommodating manufacturing variance in optical photonic integrated circuits
A photonic integrated circuit is provided that is adapted to compensate for an unintentional manufactured refractive index profile, such as a gradient, that arises due to manufacturing variance. The photonic integrated circuit including at least a thermal source and a spaced thermal sink to induce a thermal gradient in the photonic integrated circuit between the thermal source and the spaced thermal sink, the thermal gradient imparts an opposing thermal refractive index profile to correct for the manufactured refractive index profile. In some embodiments the photonic integrated circuit may be constructed with features that have an intentional structured refractive index profile that ensures any unintentional manufactured refractive index profile is correctable by the opposing thermal refractive index profile induced by the thermal source.