Described herein are photonic integrated circuits (PICs) comprising a semiconductor optical amplifier (SOA) to output a signal comprising a plurality of wavelengths, a sensor to detect data associated with a power value of each wavelength of the output signal of the SOA, a filter to filter power values of one or more of the wavelengths of the output signal of the SOA, and control circuitry to control the filter to reduce a difference between a pre-determined power value of each filtered wavelength of the output signal of the SOA and the detected power value of each filtered wavelength of the output signal of the SOA.

Described are various configurations of optical structures having asymmetric-width waveguides. A photodetector can include parallel waveguides that have different widths, which can be connected via passive waveguide. One or more light absorbing regions can be proximate to the waveguides to absorb light propagating through one or more of the parallel waveguides. Multiple photodetectors having asymmetric width waveguides can operate to transduce light in different modes in a polarization diversity optical receiver.

Temperature measurements of photonic circuit components may be performed optically, exploiting a temperature-dependent spectral property of the photonic device to be monitored itself, or of a separate optical temperature sensor placed in its vicinity. By facilitating measurements of the temperature of the individual photonic devices rather than merely the photonic circuit at large, such optical temperature measurements can provide more accurate temperature information and help improve thermal design.

A light detection and ranging system can employ a metal insulator metal tunnel junction positioned atop a substrate. Activation of the metal insulator metal tunnel junction by a signal from a controller can generate light via inelastic scattering. Light to be used to detect downrange targets can be combined from multiple junctions via a multimode interference combiner.

An optical sensing system comprising an optical fiber, a light source, a first interrogator and a second interrogator. The optical fiber includes one or more optical sensors. The light source is placed at a first end of the optical fiber and is configured to direct light towards the one or more optical sensors. The first interrogator is placed at the first end of the optical fiber. The second interrogator placed at a second, opposite end of the optical fiber. The first interrogator is configured to receive reflected light from the one or more optical sensors, and the second interrogator is configured to receive transmitted light from the one or more optical sensors.

The present invention relates to an optoelectronic device (1) for detection of a target substance dispersed in a fluid (50). The optoelectronic device comprises:—a light source (2) adapted to emit a light radiation (L.sub.E) having an adjustable wavelength λ.sub.S;—an integrated electronic circuit (100) comprising a photonic circuit (10) operatively coupled to said light source;—a control unit (9) operatively coupled to said light source and to said photonic circuit.

Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

A photonic integrated circuit (PIC) for determining a wavelength of an input signal is disclosed. The PIC comprises: a substrate; a first Mach-Zehnder Interferometer (MZI) disposed over the substrate, comprising first optical waveguides having a first optical path length difference, and configured to receive a first output optical signal from a light source. The PIC also comprises a second Mach-Zehnder Interferometer (MZI) disposed over the substrate, comprising second optical waveguides having a second optical path length difference, which is greater than the first optical path length difference, and configured to receive a second output optical signal from the light source.

The LIDAR chip includes a utility waveguide that guides an outgoing LIDAR signal to a facet through which the outgoing LIDAR signal exits from the chip. The chip also includes a control branch that removes a portion of the outgoing LIDAR signal from the utility waveguide. The control branch includes a control light sensor that receives a light signal that includes light from the removed portion of the outgoing LIDAR signal. The chip also includes a data branch that removes a second portion of the outgoing LIDAR signal from the utility waveguide. The data branch includes a light-combining component that combines a reference light signal that includes light from the second portion of the outgoing LIDAR signal with a comparative light signal that includes light that was reflected off an object located off of the chip.

An apparatus for monitoring strain in an optical chip in silicon photonics platform. The apparatus includes a silicon photonics substrate shared with the optical chip. Additionally, the apparatus includes an optical input configured in the silicon photonics substrate to supply an input signal of a single wavelength. The apparatus further includes a first waveguide arm and a second waveguide arm embedded in the silicon photonics substrate to form an on-chip interferometer. The second waveguide arm forms a delay line being disposed at a region in or adjacent to the optical chip. The on-chip interferometer is configured to generate an interference pattern serving as an indicator of strain distributed at the region in or adjacent to the optical chip. The interference pattern is caused by a temperature-independent phase shift at the single wavelength of the interferometer between the first waveguide arm and the second waveguide arm.