An electronic module is provided. The electronic module includes a carrier, a movable component and an optical component. The movable component is on the carrier and configured to be movable with respect to the carrier. The optical component is configured to detect a movement of the movable component by an optical coupling between the optical component and the movable component.

A loss-based wavelength meter includes a first photodiode configured to measure power of monochromatic light; and a loss section having a monotonic wavelength dependency, wherein a wavelength of the monochromatic light is determined based on measurements of the first photodiode after the monochromatic light has gone through the loss section. This provides a compact implementation that may be used in integrated optics devices using silicon photonics as well as other embodiments.

A method is described of manufacturing an optical sensing element for detecting a presence and/or determining a concentration of an analyte in a fluid medium, in particular in an aqueous medium. The optical sensing element includes an optical waveguide (e.g. an optical fiber) comprising an optically transparent material for guiding light through the sensing element along a flightpath. The optical sensing element further includes an inorganic coating for adsorbing the analyte from the fluid medium and an adhesion promotion layer formed between the optical waveguide and the inorganic coating. The adhesion promotion layer includes an adhesion promotion material for promoting adhesion of the inorganic material.

A general purpose sensor architecture integrating a surface enhanced Raman spectroscopy (SERS) substrate, a diffractive laser beam delivery substrate and a diffractive infrared detection substrate is provided that can be used to implement a low-cost, compact lab-on-a-chip biosensor that can meet the needs of large-scale infectious disease testing. The sensor architecture can also be used in any other application in which molecules present in the liquid, gaseous or solid phases need to be characterized reliably, cost-effectively and with minimal intervention by highly skilled personnel.

Aspects of the present disclosure are directed to structural modifications introduced in a waveguide structure in order to more tightly pack adjacent waveguide turns in an optical gyroscope fabricated on a planar silicon platform as a photonic integrated circuit. Increasing number of turns of the gyroscope coil increases total waveguide length as well as enclosed area of the gyroscope loop, which translates to increased sensitivity to rotational measurement.

A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

Techniques for aligning each of a plurality of optical fibers for coupling to a photonic integrated circuit (PIC). Transmission is detected from each respective optical fiber to the PIC using a probe, and the respective optical fiber is aligned based on the detected transmission. Each of the plurality of optical fibers is coupled to the PIC using at least one of: (i) laser splicing, (ii) laser spot welding, or (iii) arc welding.

A silicon-on-insulator (SOI) substrate includes a silicon dioxide layer and a silicon layer. A detection region receives a detected optical mode coupled to an incident optical mode defined by an optical waveguide in the silicon layer. The detection region consists essentially of an intrinsic semiconductor material with a spacing structure surrounding at least a portion of the detection region, which comprises p-type, n-type doped semiconductor regions adjacent to first, second portions, respectively, of the detection region. A dielectric layer is deposited over at least a portion of the spacing structure. The silicon layer is located between the dielectric layer and the silicon dioxide layer. First, second metal contact structures are formed within trenches in the dielectric layer electrically coupling to the p-type, n-type doped semiconductor regions, respectively, without contacting any of the intrinsic semiconductor material of the detection region.

In one aspect, a photonic device includes a substrate layer comprising magnesium fluoride and an optical guiding layer disposed on the substrate layer. The optical guide layer includes silicon dioxide. The substrate layer and the optical guide layer are transparent at an ultraviolet and visible wavelength range. In another aspect, a method includes oxidizing silicon to form a silicon dioxide layer, bonding the silicon dioxide layer to magnesium fluoride, removing the silicon and performing lithography and etching of the silicon dioxide to form a photonic device.

Sensors for imaging boreholes via the detection of electrical and optical properties may be subject to harsh conditions downhole, such as from pressure and temperature. In addition, these sensors may be subject to impact, such as tension, elongation, and compression forces, along the wall of the borehole. The harsh conditions downhole and impacts on the sensor can lead to premature wear and even breaking. The present disclosure generally relates to an apparatus for measuring electrical and optical properties of the borehole and methods for manufacturing the apparatus.