A thermo-optic phase shifter comprises an optical waveguide comprising a P-type region comprising a first contact, an N-type region comprising a second contact, and a waveguide region disposed between the P-type region and the N-type region and having a raised portion. The thermo-optic phase shifter further comprises one or more heating elements. The one or more heating elements include one or more discrete resistive heating elements or the P-type and N-type regions driven as resistive heating elements.

A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

In an integrated optical device, squeezed light is used internally to effectively increase an optical modulation effect. One exemplary device operates by squeezing the light at the input, then sending it through an electro-optic stage where its phase picks up the signal of interest, and finally anti-squeezing it to obtain a displaced coherent state. Thus the displacement is amplified by the level of squeezing that is achieved inside the device and it is thereby less sensitive to loss. Since this device behaves simply as an electro-optic modulator, albeit one with an exponentially enhanced sensitivity, no extra considerations are needed to integrate the modulator into a system. Such devices can be operated as modulators or as sensors, and can make use of optical phase shift effects other than the electro-optic effect.

A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

An apparatus includes a lithium niobate (LN) layer, and a planar electro-optical modulator having at least one hybrid optical core segment formed of a portion of the LN layer and an optical guiding rib. The optical guiding rib may be located in a top silicon layer of a silicon photonics (SiP) chip, to which a thin-film LN chip is flip-chip mounted, and may be coupled to optical waveguide cores in a first silicon core layer of the SiP chip. One or more drive electrodes are disposed between a substrate of the SiP chip and the LN layer. In some embodiments hybrid optical core segments may include silicon nitride core segments and may form an MZM configured to be differentially or dual-differentially driven.

Semiconductor device includes light-emitting die and semiconductor package. Light emitting die includes substrate and first conductive pad. Substrate has emission region located at side surface. First conductive pad is located at bottom surface of substrate. Semiconductor package includes semiconductor-on-insulator substrate, interconnection structure, second conductive pad, and through semiconductor via. Semiconductor-on-insulator substrate has linear waveguide formed therein. Interconnection structure is disposed on semiconductor-on-insulator substrate. Edge coupler is embedded within interconnection structure and is connected to linear waveguide. Semiconductor-on-insulator substrate and interconnection structure include recess in which light-emitting die is disposed. Edge coupler is located close to sidewall of recess. Second conductive pad is located at bottom of recess. Through semiconductor via extends across semiconductor-on-insulator substrate to contact second conductive pad. First conductive pad is connected to through semiconductor via. Emission region directly faces sidewall of recess where edge coupler is located.

A waveguide element includes a first waveguide and a second waveguide. The first waveguide includes a first main rib and a first slab that has a smaller thickness than that of the first main rib and in which a slab mode of light propagates. The second waveguide includes a second main rib that is optically coupled with the first main rib and in which the light propagates, a second slab that has a smaller thickness than that of the second main rib, that is optically coupled with the first slab, and in which the slab mode propagates, and a side rib that has a larger thickness than that of the second slab. The slab mode that propagates through the second slab transitions to the side rib in accordance with travel of the light that propagates in the first main rib and the second main rib.

A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.

A photonic integrated circuit including first and second opto-electronic devices that are fabricated on a semiconductor wafer having an epitaxial layer stack including an n-type indium phosphide-based contact layer that is provided with at least one selectively p-type doped tubular-shaped region for providing an electrical barrier between respective n-type contact regions of the first and second opto-electronic devices that are optically interconnected by a passive optical waveguide that is fabricated in a non-intentionally doped waveguide layer including indium gallium arsenide phosphide, the non-intentionally doped waveguide layer being arranged on top of the n-type contact layer, wherein a first portion of the at least one selectively p-type doped tubular-shaped region is arranged underneath the passive optical waveguide between the first and second opto-electronic devices. An opto-electronic system including the photonic integrated circuit.