A method includes depositing a crystalline magnesium oxide (MgO) seed layer directly on an amorphous insulating cladding layer by a physical vapor deposition (PVD) process, and depositing a crystalline electro-optic layer directly on the crystalline MgO seed layer.

A photonic waveguide structure includes at least four photonic waveguide layers disposed in a stack configuration. A first photonic waveguide layer, of the at least four photonic waveguide layers, includes a first active structure associated with one or more particular nonlinear optical characteristics, which include a Kerr coefficient that is greater than or equal to 1×10.sup.−18 meters squared per Watt. A second photonic waveguide layer, of the at least four photonic waveguide layers, includes a second active structure associated with one or more particular linear optical characteristics, which include a propagation loss parameter that is less than or equal to 0.5 decibels per centimeter. The first active structure and the second active structure are formed using one or more sputtering processes, and the first active structure and the second active structure are each configured to transmit light with wavelengths from 350 nanometers (nm) to 5000 nm.

A photonic integrated circuit (PIC) is disclosed herein. The PIC can include a substrate, a main optical waveguide supported by the substrate. The main optical waveguide can be in communication with an electromagnetic radiation source, and configured to receive electromagnetic radiation from the electromagnetic radiation source. A first branch optical waveguide can be optically coupled to the main optical waveguide at a first location. An optical phased array (OPA) can include plurality of array elements, each having an optical antenna and an optical phase modulator. At least some array elements within a first subset of the plurality of array elements can be optically coupled to the first branch optical waveguide wherein locations of at least some of the plurality of array elements are aperiodic in one or more directions on the substrate.

A silicon-photonic optical modulator includes at least one optical input and at least one optical waveguide that is connected to the at least one optical input. The at least one optical waveguide is configured to propagate quasi-transverse-magnetic (quasi-TM) polarized light, where each of the at least one optical waveguide is configured as a rib waveguide that includes a rib arranged on a slab. The silicon-photonic optical modulator also includes at least one electrode configured to apply at least one electric field to the quasi-TM polarized light in the at least one optical waveguide. In some implementations, a height of the rib waveguide is greater than 0.85 λ/n, where A is a free-space wavelength of light and n is a refractive index of silicon in the silicon-photonic optical modulator, and a width of the rib waveguide is greater than a thickness of the slab.

Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

A silicon photonics integrated chip includes the transmit-input waveguide unit, the splitter unit, the modulator unit, the transmit-output waveguide unit, the receive-input waveguide unit and the receiving detector unit integrated inside the chip. A silicon photonics multi-channel parallel optical component and a coupling method of the silicon photonics multi-channel parallel optical component are also provided. The integrated silicon photonics chip is adopted, the transmitting part still uses two-way DC laser group, the receiving chip is integrated inside the silicon photonics chip, and the optical interface adopts the mature FA-MPO in the industry. It has the advantages of mature technology, high degree of integration, relatively low cost, fewer coupling processes, etc., it is one of the advantageous choices for rates above 400 G.

The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.

The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.

A photonic integrated circuit (PIC) includes an organic solid crystal (OSC) material layer, the OSC material layer having a substrate portion and a raised optical element integral with and extending from the substrate portion. The raised optical element may include a passive or active component of the photonic integrated circuit.