Electrical test of optical components via metal-insulator-semiconductor capacitor structures is provided via a plurality of optical devices including a first material embedded in a second material, wherein each optical device is associated with a different thickness range of a plurality of thickness ranges for the first material; a first capacitance measurement point including the first material embedded in the second material; and a second capacitance measurement point including a region from which the first material has been replaced with the second material.

Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.

A multi-speed transceiver device includes a chassis having an optical cable connector coupled to a transceiver processor, and an optical waveguide coupling. A data receiving subsystem in the chassis couples the transceiver processor to the optical waveguide coupling, includes data receiving optical waveguides, and transmits first data received from the transceiver processor to the optical waveguide coupling over a number of the data receiving optical waveguides that depends on a first data transmission speed at which the first data was received. A data transmission subsystem in the chassis couples the transceiver processor to the optical waveguide coupling, includes data transmission optical waveguides, and receives second data via the optical waveguide coupling and over a number of the data transmission optical waveguides that depends on a second data transmission speed at which the second data was received, and then transmits that second data to the transceiver processor.

The present application provides an electrostatic discharge guard structure for photonic platform based photodiode systems. In particular this application provides a photodiode assembly comprising: a photodiode (such as a Si or SiGe photodiode); a waveguide (such as a silicon waveguide); and a guard structure, wherein the guard structure comprises a diode, extends about all or substantially all of the periphery of the Si or SiGe photodiode and allows propagation of light from the silicon waveguide into the Si or SiGe photodiode.

An intersecting splitter configured so that the branching ratio of each optical splitter differs in accordance with the difference in the number of intersections in each branched waveguide. The branching ratios (totaling 100%) of the optical splitters are adjusted so that the branching ratios on the high side as to the number of intersections is high in comparison with the branching ratios on the low side as to the number of intersections, and it is thereby possible to level the total loss.

The present invention discloses a photonic crystal all-optical anti-interference self-locking trigger switch which includes a photonic crystal structure unit, an optical switch, an absorbing load and an internal or external reference light source, wherein said photonic crystal structure unit includes two signal-input ends, a signal-output end; a first input end of said photonic crystal structure unit is connected to a logic signal X; the input end of the optical switch is connected with the reference light source, the first intermediate signal-output end of the optical switch is connected with the second input end of the photonic crystal structure unit, and the second intermediate signal-output end of the optical switch is connected with the wave absorbing load. The present invention has the advantages of high contrast of high and low logic output, high computing speed, strong anti-interference capability, and ease of integration with other optical logic elements.

The present invention discloses a TMOS based on slab PhCs with a high DOP and a large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is called as a first square-lattice slab PhC with a TE bandgap, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and a normalized operating frequency of the TMOS with high DOP and large extinction ratio is 0.252 to 0.267.

The present invention discloses a TEOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is a first square-lattice slab PhC, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three first flat dielectric pillars and a background dielectric, the first flat dielectric pillars include a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or 1 to 3 high-refractive-index flat films, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three second flat dielectric pillars and a background dielectric is a low-refractive-index dielectric; and an normalized operating frequency of the TEOS is 0.4057 to 0.406.

The present invention discloses a TEOS based on slab PhCs with a high DOP and large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is a first square-lattice slab PhC with a TM bandgap and a complete bandgap, wherein the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square lattice slab PhC with a TM bandgap and complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and an normalized operating frequency of the TEOS is 0.453 to 0.458.

A device includes a first excitation light source that emits first excitation light, a second excitation light source that emits second excitation light, a wavelength converter that converts signal light of a first wavelength into signal light of a second wavelength according to the first excitation light, and a measurer that measures a frequency difference between the first excitation light and the second excitation light, wherein when an abnormality of the first excitation light is detected, the second excitation light source is adjusted so that a frequency of the second excitation light is aligned with a frequency of the first excitation light before the abnormality detection, based on the frequency difference before the abnormality detection, and the wavelength converter converts the signal light of the first wavelength into the signal light of the second wavelength according to the second excitation light, after adjusting the frequency of the second excitation light.