An optoelectronic chip includes optical inputs having different passbands, a photonic circuit to be tested, and an optical coupling device configured to couple said inputs to the photonic circuit to be tested.

A waveguide assembly, an integrated chip, and a LiDAR are provided. The waveguide assembly includes a plurality of single-mode waveguides arranged with intervals. The effective refractive index of at least one single-mode waveguide is not equal to that of another adjacent single-mode waveguide.

There is provided a device (300;500;700) for collecting fluorescent light (322) emitted by particles (304) in a medium (302). The device (300;500;700) comprises a substrate (308) having a chamber (306) for holding the medium (302) including the particles (304) being capable of emitting fluorescent light (322). A first waveguide (310), which is arranged to receive and guide excitation light along a first direction (313), extends through the chamber (306). Fluorescent light (322) emitted by the particles (304) following an excitation is collected by the first waveguide (310). The device (300;500;700) further comprises a coupler (316;516) which includes a second waveguide (317) arranged to output collected fluorescent light (326) at one of its ends (318). The second waveguide (317) is arranged in relation to the first waveguide (310) such that collected fluorescent light (324) travelling in a direction opposite to the first direction (312) is coupled out from the first waveguide (310) directly into the second waveguide (317).

A silicon photonics integrated chip includes the transmit-input waveguide unit, the splitter unit, the modulator unit, the transmit-output waveguide unit, the receive-input waveguide unit and the receiving detector unit integrated inside the chip. A silicon photonics multi-channel parallel optical component and a coupling method of the silicon photonics multi-channel parallel optical component are also provided. The integrated silicon photonics chip is adopted, the transmitting part still uses two-way DC laser group, the receiving chip is integrated inside the silicon photonics chip, and the optical interface adopts the mature FA-MPO in the industry. It has the advantages of mature technology, high degree of integration, relatively low cost, fewer coupling processes, etc., it is one of the advantageous choices for rates above 400 G.

The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.

There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.

Embodiments of the present disclosure provide etch-variation tolerant optical coupling components and processes for making the same. An etch-variation tolerant geometry is determined for at least one waveguide of an optical coupling component (e.g., a directional coupler). The geometry is optimized such that each fabricated instance of an optical component design with the etch-variation tolerant geometry has substantially the same coupling ratio at any etch depth between a shallow etch depth and a deep etch depth.

A method includes receiving Bell pairs. Photons are obtained in a Greenberger-Horn-Zeilinger (GHZ) state by providing, to a first beam splitter, a photon from a first Bell pair and a photon from a second Bell pair. The first beam splitter is coupled with a first output channel and a second output channel. Obtaining the photons in the GHZ state further includes providing, to a second beam splitter, a photon from a third Bell pair and a photon from a fourth Bell pair. The second beam splitter is coupled with a third output channel and a fourth output channel. Obtaining the photons in the GHZ state further includes providing a photon output from the second output channel as a first input to a detector and a photon output in the third output channel a second input to the first detector.

An optical circuit module comprises a substrate with a first optical coupler connected to a first optical waveguide and a second optical coupler connected to a second optical waveguide on a substrate surface side; and a semiconductor photonic device mounted on the substrate, wherein the semiconductor photonic device has a third optical waveguide and a fourth optical waveguide extending to a first end face that faces the substrate surface, and wherein the third optical waveguide is optically connected to the first optical coupler and the fourth optical waveguide is optically connected to the second optical coupler.

A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance. Thus, even when the first-layer wiring is formed above the optical directional coupler, the influence of the light reflected by the first-layer wiring on the optical signal propagating through the first optical waveguide and the second optical waveguide of the optical directional coupler can be reduced. Accordingly, the first-layer wiring can be arranged above the optical directional coupler, and the restriction on the layout of the first-layer wiring is relaxed.