Structures for an optical power splitter and methods of forming a structure for an optical power splitter. A first waveguide core includes a portion positioned over a multimode interference region, a second waveguide core includes a portion positioned over the multimode interference region, and a third waveguide core includes a portion positioned over the multimode interference region. The first waveguide core provides an input port to the optical power splitter. The second waveguide core provides a first output port from the optical power splitter, and the third waveguide core provides a second output port from the optical power splitter.

A device includes an integrated structure of an input fiber, a first output fiber, an input splitting/combining device, a first output splitting/combining device, an input rotation device, a first output rotation device, a first lens, an isolator core, a second lens, a second output rotation device, a second output splitting/combining device, and a second output fiber. With the integrated structure, the device integrates functions of an optical isolator and an optical splitter. As an optical splitter, input of an optical signal into the input fiber are distributed to the two output fibers for output. As an optical splitter, the device can isolate light in opposite directions and can reduce damage to a light source at the input. In a system, the device can replace two conventional optical isolators and optical splitters and effectively reduce space, simplify the assembly process, and facilitate miniaturization and integration for systems.

A splitter. In some embodiments, the splitter includes an input waveguide; a first output waveguide; a second output waveguide; a first internal waveguide, connected to the input waveguide and to the first output waveguide, and a second internal waveguide, coupled to the first internal waveguide and connected to the second output waveguide. The splitter may be configured, when fed, at the input waveguide, power in a fundamental mode of the input waveguide or power in a first order spatial mode of the input waveguide: to transmit at least 80% of the power in the fundamental mode to the first output waveguide, and to transmit at least 80% of the power in the first order spatial mode to the second output waveguide.

A virtual image generation system comprises a planar optical waveguide having opposing first and second faces, an in-coupling (IC) element configured for optically coupling a collimated light beam from an image projection assembly into the planar optical waveguide as an in-coupled light beam, a first orthogonal pupil expansion (OPE) element associated with the first face of the planar optical waveguide for splitting the in-coupled light beam into a first set of orthogonal light beamlets, a second orthogonal pupil expansion (OPE) element associated with the second face of the planar optical waveguide for splitting the in-coupled light beam into a second set of orthogonal light beamlets, and an exit pupil expansion (EPE) element associated with the planar optical waveguide for splitting the first and second sets of orthogonal light beamlets into an array of out-coupled light beamlets that exit the planar optical waveguide.

The present disclosure relates to an electro-optical modulator system having a source laser which generates an input optical signal. The input optical signal is received by an electro-optical module. The electro-optical module is implantable into an anatomy and includes a plurality of pixels. Each pixel has associated therewith an electrode and an optical modulator subsystem. The electrode receives electrical signals from the anatomy. The optical modulator subsystem receives the input optical signal and modulates the input optical signal to generate modulated optical output signals in relation to the received electrical signals. A detector subsystem may be used to receive and collect the modulated optical output signals.

Integrated circuitry is fabricated from semiconductor layers formed on a substrate, which include a p-type gate-all-around layer structure that includes a plurality of quantum well structures formed between a pair of p-type thin doped layers spaced vertically from one another. A p-type layer is formed above the p-type gate-all-around layer structure. An etch operation exposes the p-type layer. P-type ions are implanted into the exposed second p-type layer to a depth that extends through the p-type gate-all-around layer structure and contacts the p-type thin doped layers of the p-type gate-all-around layer structure. A gate electrode of an n-channel HFET device is formed in contact with the ion-implanted p-type region(s). Source and drain electrodes of the n-channel HFET device are formed in contact with ion-implanted n-type regions that contact the plurality of quantum well structures of the p-type gate-all-around layer structure. P-channel GAA HFET devices, complementary BICFET devices, stacked complementary HFET devices and circuits and/or logic gates based thereon, and a variety of optoelectronic devices and optical devices can also be formed as part of the integrated circuitry.

Optical devices including an optical splitter and a duplex optical connector are disclosed. In one embodiment, an optical device includes an optical splitter having an input, a network output, and a pass-through output, wherein the optical splitter is configured to split an input signal received at the input into a network optical signal at the network output and a pass-through output signal at the pass-through output. The optical device further includes a duplex connector having an input connection point and a pass-through connection point, an input waveguide optically coupling the input connection point to the input of the optical splitter, and a pass-through waveguide optically coupling the pass-through connection point to the pass-through output of the optical splitter.

An optoelectronic device. The device comprising: an input waveguide, which receives an optical signal; a multistage photodiode detector, comprising a plurality of photodiode elements connected in series, one of the photodiode elements of the plurality of photodiode elements being connected to the input waveguide and configured to receive the optical signal therefrom; and a first electrode and a second electrode, wherein the first electrode is connected to a first contact of each of the plurality of photodiode elements, and the second electrode is connected to a second contact of each of the plurality of photodiode elements.

A semiconductor light receiving element includes a first semiconductor layer, a waveguide type photodiode structure, an optical waveguide structure, and a fourth semiconductor layer. The waveguide type photodiode structure is provided on the first semiconductor layer. The waveguide type photodiode structure includes an optical absorption layer, a second semiconductor layer, a multiplication layer, and a third semiconductor layer. The optical waveguide structure is provided on the first semiconductor layer. The optical waveguide structure includes an optical waveguiding core layer and a cladding layer. An end face of the waveguide type photodiode structure faces to an end face of the optical waveguide structure. The fourth semiconductor layer is located between the end face of the waveguide type photodiode structure and the end face of the optical waveguide structure. The fourth semiconductor layer contacts the multiplication layer at the end face of the waveguide type photodiode structure.

Disclosed are integrated photonics systems including polarization controllers for photonics systems which incorporate integrated photonics for implementing polarization effects in optical signals. Integrated photonic components separate, control, and combine the polarization components of optical signals, using a polarization splitter combiner, at least one phase shifter and a least one splitter.