An optical waveguide may include a silicon portion and a silicon nitride portion positioned over the silicon portion. The silicon portion may include a taper that decreases a width of the silicon portion. The optical waveguide may include a transition between a loaded single mode or multimode waveguide to a single mode waveguide. The silicon nitride portion may confine optical signals traveling through the optical waveguide in the silicon portion.

An optical waveguide adapter assembly comprises a solid core optical waveguide extending between a free end and a coupled end and having a solid waveguiding core with an associated first optical mode field size; a hollow core optical waveguide extending between a free end and a coupled end and having a hollow waveguiding core with an associated second optical mode field size; and an optical mode field adapter extending between a first end and a second end and having a waveguiding core configured to change an optical mode field of a waveguided optical signal substantially between the first optical mode field size at the first end of the optical mode field adapter and the second optical mode field size at the second end of the optical mode field adapter, the first end of the optical mode field adapter joined to the coupled end of the solid core optical waveguide to provide optical coupling between the waveguiding core of the solid core optical waveguide and the waveguiding core of the optical mode field adapter, and the second end of the optical mode field adapter joined to the coupled end of the hollow core optical waveguide to provide optical coupling between the waveguiding core of the hollow core optical waveguide and the waveguiding core of the optical mode field adapter.

A device coupon for use in a hybrid integration process with a silicon platform. The device coupon comprises: an input waveguide, including an input facet; an active waveguide, coupled to the input waveguide, the active waveguide including a III-V semiconductor based electro-optical device; and an output waveguide, configured to couple light between the active waveguide and an output facet. The input waveguide and output waveguide are passive waveguides.

Techniques for forming a photonic device that includes a suspended photonic structure suspended over a silicon substrate are described. A sealed cavity is positioned between the silicon substrate and the photonic structure, and one or more regions of dielectric material act to seal the cavity. Additional structure(s) may be formed on top of the dielectric material.

An optical device and a method of manufacturing an optical device, including a ridge waveguide second, and a strip-loaded ridge waveguide section, comprises applying two different protective layers and two separate etches at two different depths. The protective layers overlap to protect the same section of the optical device, and to limit the surfaces of optical device to exposure to multiple etches, except at edges where the protective layers overlap.

A system may include a polarization rotator combiner. The polarization rotator combiner may include a first stage, a second stage, and a third stage. The first stage may receive a first component of light with a TE00 polarization and a second component of light with the TE00 polarization. The first stage may draw optical paths of the first and second components together. The second stage may receive the first component and the second component from the first stage. The second stage may convert the polarization of the second component from the TE00 polarization to a TE01 polarization. The third stage may receive the first component and the second component from the second stage. The third stage may convert polarization of the second component from the TE01 polarization to a TM00 polarization. The third stage may output the first component and output the second component.

A low loss high extinction ratio on-chip polarizer is disclosed. The polarizer includes an input waveguide taper having an outer waveguiding region that widens in the direction of light propagation along at least a portion of the taper length, and a core waveguiding region that narrows in the direction of light propagation along at least a portion of the taper length, so as to selectively squeeze out light of undesired modes into the outer regions while preserving light of a desired mode in the waveguide core. An integrated light absorber/deflector may be coupled to the outer waveguiding regions.

A technology is described for a Photonic Integrated Circuit (PIC) radio frequency (RF) oscillator. The PIC RF oscillator can comprise an optical gain media coupled to a first mirror and configured to be coupled to the PIC. The PIC can comprise a first optical cavity located within the PIC, a tunable mirror to form a first optical path between the first mirror in the gain media and the first tunable mirror, and a frequency tunable intra-cavity dual tone resonator positioned within the first optical cavity to constrain the first optical cavity having a common optical path to produce tow primary laser tones with a tunable frequency spacing. A photo detector is optically coupled to the PIC and configured to mix the two primary laser tones to form an RF output signal with a frequency selected by the tunable frequency spacing of the two primary tones.

Optical circuits support reconfigurable spatial rearrangement (also referred to as spatial multiplexing) for a group of photons propagating in waveguides. According to some embodiments, a set of 2?2 muxes can be used to rearrange a pattern of photons on a first set of waveguides into a usable input pattern for a downstream optical circuit.

An optical mode converter and method of fabricating the same from wafer including a double silicon-on-insulator layer structure. The method comprising: providing a first mask over a portion of a device layer of the DSOI layer structure; etching an unmasked portion of the device layer down to at least an upper buried oxide layer, to provide a cavity; etching a first isolation trench and a second isolation trench into a mode converter layer, the mode converter layer being: on an opposite side of the upper buried oxide layer to the device layer and between the upper buried oxide layer and a lower buried oxide layer, the lower buried oxide layer being above a substrate; wherein the first isolation trench and the second isolation trench define a tapered waveguide; filling the first isolation trench and the second isolation trench with an insulating material, so as to optically isolate the tapered waveguide from the remaining mode converter layer; and regrowing the etched region of the device layer.