A photonic structure is provided. The photonic structure includes a first oxide layer in a semiconductor substrate, a second oxide layer over an upper surface of the semiconductor substrate and an upper surface of the first oxide layer, and an optical coupling region over an upper surface of the second oxide layer. The optical coupling region is made of silicon, and an area of the optical coupling region is confined within an area of the first oxide layer in a plan view.

Aspects of the present application provide an optical device comprising a suspended optical component over a cavity, such as an undercut region in a substrate. The cavity is filled with a filler material. In some embodiments, the optical device and a method may be provided to fill the cavity with the filler material using a reservoir and a channel in the substrate connecting the reservoir to the cavity to be filled.

A semiconductor device is provided. The semiconductor device includes a silicon nitride waveguide in a first dielectric layer over a substrate. The semiconductor device includes a semiconductor waveguide in a second dielectric layer over the first dielectric layer. The first dielectric layer including the silicon nitride waveguide is between the second dielectric layer including the semiconductor waveguide and the substrate.

An optical coupling may involve orienting a waveguide and a lens such that light rays are focused on a surface. The lens may involve the use of a material having a variable refractive index to focus rays of light along first axis and a curved surface to focus the rays of light along a second axis.

Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The edge coupler includes a waveguide core having an end surface and a tapered section that terminates at the end surface. The tapered section of the waveguide core includes a slab layer and a ridge layer on the slab layer. The slab layer and the ridge layer each terminate at the end surface. The slab layer has a first width dimension with a first width at a given location along a longitudinal axis of the waveguide core, the ridge layer has a second width dimension with a second width at the given location along the longitudinal axis of the waveguide core, and the first width is greater than the second width.

A semiconductor device includes a substrate, a trench in the substrate, the trench having an inclined sidewall, a reflective layer over the inclined sidewall, a grating structure over the substrate, and a waveguide in the trench. The waveguide is configured to guide optical signals between the grating structure and the reflective layer.

A method for packaging a semiconductor structure, a packaging structure, and a chip. The method includes: forming the semiconductor structure on a SOI chip, where the semiconductor structure includes an edge coupler or a cavity structure; forming, through PECVD, silicon oxide on a surface of the semiconductor structure, where the surface is provided with an opening of a trench; and performing subsequent packaging. A characteristic of low step coverage of the PECVD is utilized for sealing an opening of a trench of the semiconductor structure, and addressed is an issue of a device failure due to the trench blocked by a packaging material in subsequent packaging.

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

There is provided an optical waveguide structure, including a substrate, an insulating layer disposed on the substrate whereby the insulating layer includes an air slot formed therein, a first material layer suspended over the air slot whereby the first material layer constitutes a waveguide core of the optical waveguide structure, and a second material layer disposed over the waveguide core whereby the waveguide core is suspended over the air slot by the second material layer. There is also provided an optical gas sensor incorporating the optical waveguide structure and methods of fabrication thereof.

A first chip includes a first plurality of optical waveguides exposed at a facet of the first chip. A second chip includes a second plurality of optical waveguides exposed at a facet of the second chip. The second chip includes first and second spacers on opposite sides of the second plurality of optical waveguides. The first and second spacers have respective alignment surfaces oriented substantially parallel to the facet of the second chip at a controlled perpendicular distance away from the facet of the second chip. The second chip is positioned with the alignment surfaces of the first and second spacers contacting the facet of the first chip, and with the second plurality of optical waveguides respectively aligned with the first plurality of optical waveguides. The first and second spacers define and maintain an air gap of at least micrometer-level precision between the first and second pluralities of optical waveguides.