This method comprises: before bonding a substrate to a layer of encapsulated semiconductor material in which a first part of an optical component is produced, producing indented pads inside a buried layer of silicon oxide, with each of these pads comprising an embedded face that extends parallel to an interface between the buried layer and the layer of encapsulated semiconductor material to a predetermined depth inside the buried layer, with each of the embedded faces being made of a material different from silicon oxide; then thinning the buried layer in order to leave a residual silicon oxide layer on the layer of encapsulated semiconductor material, with this thinning comprising an operation involving thinning the buried layer, with this thinning stopping as soon as the embedded face of the pads is exposed.

Devices and methods for photonic integrated circuits are provided. A device may include a silicon wafer substrate having one or more angled facet(s); a coating applied to the angled facet; and an oxide layer to form a planar surface to enable hybrid and/or fusion bonding. A method may include: etching a first silicon wafer to create one or more sloped sidewalls, an angle of the one or more sloped sidewalls being determined by a crystallographic orientation of the silicon wafer and/or advanced lithography processes such as greyscale or nano-imprint lithography; depositing a coating on at least one sloped sidewall of the one or more sloped sidewalls to create a surface for manipulating the light within the photonic structure; and enabling a final surface that allows for integration with a photonic integrated circuit (PIC) through hybrid and/or fusion bonding.