An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

A method for physically modifying at least one of at least one region of a surface of a substrate and at least one portion of the substrate, the substrate comprising a multicomponent glass, the method comprising the steps of: providing an apparatus and the substrate, the apparatus including a radiation source configured for generating a particle beam; feeding the substrate to the apparatus and applying a vacuum; modifying at least one of the at least one region of the surface of the substrate and the at least one portion of the substrate by an exposure to the particle beam.

Disclosed are embodiments of a photonic integrated circuit (PIC) structure with a waveguide core having tapered sidewall liner(s) (e.g., symmetric tapered sidewall liners on opposing sides of a waveguide core, asymmetric tapered sidewall liners on opposing sides of a waveguide core, or a tapered sidewall liner on one side of a waveguide core). In some embodiments, the tapered sidewall liner(s) and waveguide core have different refractive indices. In an exemplary embodiment, the waveguide core is a first material (e.g., silicon) and the tapered sidewall liner(s) is/are a second material (e.g., silicon nitride) with a smaller refractive index than the first material. In another exemplary embodiment, the waveguide core is a first compound and the tapered sidewall liner(s) is/are a second compound with the same elements (e.g., silicon and nitrogen) as the first compound but with a smaller refractive index. Also disclosed are method embodiments for forming such a PIC structure.

A photonic polarization splitter rotator (PSR) includes a substrate, a first optical waveguide disposed in the substrate on a first layer, the first optical waveguide having a curved portion between a first end of the first optical waveguide and a second end of the first optical waveguide, and a second optical waveguide disposed in the substrate on a second layer, above the first layer, the second optical waveguide having a substantially rectangular shape and longitudinally arranged between the first end of the first optical waveguide and the second end of the first optical waveguide.

An optoelectronic device. The optoelectronic device including: a silicon platform, including a silicon waveguide and a cavity, wherein a bed of the cavity is provided at least in part by a buried oxide layer; a III-V semiconductor-based optoelectronic component, bonded to a bed of the cavity of the silicon platform; and a bridge-waveguide, located between the silicon waveguide and the III-V semiconductor-based optoelectronic component.

Structures for managing light polarization on a photonics chip and methods of forming a structure for managing light polarization on a photonics chip. A single-mode waveguiding structure is formed that includes a first waveguide core region and a second waveguide core region positioned above the first waveguide core region. The second waveguide core region includes a first section, a second section connected to the first section, and a third section connected to the second section. The second section has a first width at an intersection with the first section and a second width at an intersection with the third section. The second width is greater than the first width. The first and second waveguide core regions contain materials of different composition.

A method includes defining a first waveguide in a first region of an optical device over a first dielectric layer over a silicon on insulator (SOI) substrate of the optical device and disposing a second dielectric layer on the first waveguide and the first dielectric layer of the optical device. The method also includes defining a second region on the second dielectric layer, the first dielectric layer, and the SOI substrate. The second region includes an integrated trench structure defined in the SOI substrate. The method further includes etching the second region to form an etched second region, disposing a third dielectric layer in the etched second region, and disposing a second waveguide on at least the third dielectric layer. The second waveguide is disposed to provide an optical coupling between the second waveguide and the first waveguide.

An optical integrated device includes a substrate and a waveguide that has a hollow structure. The waveguide includes a first waveguide and a second waveguide that is optically coupled to the first waveguide and that has a smaller relative refractive index difference than that of the first waveguide and converts a mode diameter to a mode diameter of an optical fiber in accordance with travelling of light. The optical integrated device includes a dent portion that is formed in the vicinity of the dicing line on the substrate such that the width of the output end surface is smaller than the core width of the optical fiber that is optically coupled to the output end surface in the state in which the dicing end surface of the substrate protrudes farther than the output end surface of the second waveguide in the axial direction of the optical waveguide.