A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.

Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

In an embodiment a device includes a device layer, a substrate defining a substrate plane extending through a point of the substrate being closest to the device layer, a waveguide configured to guide an electromagnetic wave, wherein the waveguide extends in a length direction in the device layer, and wherein the waveguide has a width in a device layer plane in a direction perpendicular to the length direction and a height out of the device layer plane in the direction perpendicular to the length direction and a support structure, wherein the support structure extends from the substrate to the device layer to support the waveguide on the substrate.

Integrated-optics systems are presented in which an active-material stack is disposed on a coupling layer in a first region to collectively define an OA waveguide that supports an optical mode of a light signal. The coupling layer is patterned to define a coupling waveguide and a passive waveguide, which are formed as two abutting, optically coupled segments of the coupling layer. The lateral dimensions of the active-material stack are configured to control the shape and vertical position of the optical mode at any location along the length of the OA waveguide. The active-material stack includes a taper that narrows along its length such that the optical mode is located completely in the coupling waveguide where the coupling waveguide abuts the passive waveguide. In some embodiments, the passive layer is optically coupled with the OA waveguide and a silicon waveguide, thereby enabling light to propagate between them.

An optical waveguide structure has a waveguide core including an inner and an outer layer with different refractive indices, and a refractive index ratio of the different refractive indices is greater than or equal to 1.15. A dispersion controlling method using the optical waveguide structure includes: first, obtaining a dispersion curve having up to 5 zero-dispersion wavelengths by calculating based on a set of preset structural size parameters of the optical waveguide; and then, adjusting one or more of the width (W) of a contact surface between the inner layer and the substrate, the thickness (H) of a higher refractive index material, and the thickness (C) of a lower refractive index material, so as to implement dispersion control.

Provided is a light-emitting device that includes a first electrode layer, a first conduction type layer, a second conduction type layer, an active layer, and a second electrode layer. The first conduction type layer includes a current injection region formed by the first electrode layer and a current non-injection region. A waveguide structure included in the first conduction type layer, the active layer, and the second conduction type layer includes a first region and a second region. The first region has a first waveguide that is the current injection region and the current non-injection region and has a first refractive index difference. The second region has a second waveguide arranged to be extended from the first waveguide to the first end and has a second refractive index difference greater than the first refractive index difference. The second waveguide has a region narrowing toward the first end.

A display device includes a display panel including a display area and a non-display area; and an optical plate disposed on the display panel and including an optical waveguide and a body portion surrounding the optical waveguide. The optical waveguide includes an input terminal which is disposed on the display area and receives light from the display panel and an output terminal which is disposed over the non-display area and outputs the light.

Embodiments described herein provide a waveguide for transmitting electromagnetic radiation. The waveguide comprising a core region, a cladding region extending around the core region; and a first layer of a material having a thickness of less than a skin depth of the material for electromagnetic radiation of a first wavelength; wherein the first layer is configured with a periodic refractive index and positioned within the waveguide such that a first surface polariton wave is excited at an interface between the core region and cladding region when electromagnetic radiation of the first wavelength is transmitted through the core region. There is also provided a method of manufacture of the waveguide.

A waveguide structure comprising: a substrate; a waveguide layer on the substrate; a cladding layer in contact with a first side of the waveguide layer, the waveguide layer between the cladding layer and the substrate; and a first waveguide modifier layer comprising a first material for modifying a waveguide function of the waveguide layer, the first waveguide modifier layer in contact with the cladding layer and having a width along a first axis less than a width, parallel to the first axis, of the cladding layer, the first axis perpendicular to a second axis corresponding with a light propagation direction within the waveguide layer. There is a method of manufacturing a waveguide structure.

A waveguide structure. In some embodiments, the waveguide structure, includes: a first waveguide (105), a second waveguide (120), and a third waveguide (125) on a substrate (115). The first waveguide (105) may be at a different height than the second waveguide (120). The waveguides may be configured to cause light to couple between the first waveguide (105) and the second waveguide (120), and between the second waveguide (120) and the third waveguide (125). The first, second, and third waveguides (105, 120, 125) may be composed of respective materials having a first index of refraction, a second index of refraction, and a third index of refraction respectively. The third material may include silicon and nitrogen. The second index of refraction may be greater than the first index of refraction, and less than the third index of refraction.