Semiconductor devices and methods of forming the semiconductor devices are described herein. A method includes providing a first material layer between a second material layer and a semiconductor substrate and forming a first waveguide in the second material layer. The method also includes forming a photonic die over the first waveguide and forming a first cavity in the semiconductor substrate and exposing the first layer. Once formed, the first cavity is filled with a first backfill material adjacent the first layer. The methods also include electrically coupling an electronic die to the photonic die. Some methods include packaging the semiconductor device in a packaged assembly.

A multi-chip package assembly includes a substrate, a first semiconductor chip attached to the substrate, and a second semiconductor chip attached to the substrate, such that a portion of the second semiconductor chip overhangs an edge of the substrate. A first v-groove array for receiving a plurality of optical fibers is present within the portion of the second semiconductor chip that overhangs the edge of the substrate. An optical fiber assembly including the plurality of optical fibers is positioned and secured within the first v-groove array of the second semiconductor chip. The optical fiber assembly includes a second v-groove array configured to align the plurality of optical fibers to the first v-groove array of the second semiconductor chip. An end of each of the plurality of optical fibers is exposed for optical coupling within an optical fiber connector located at a distal end of the optical fiber assembly.

An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

A photonic crystal optical phased array device has a dispersion engineered slow light waveguide region; a mode coupler region capable of optically coupling an input waveguide to the dispersion engineered slow light waveguide region; and optical antenna regions integrated within the dispersion engineered slow light waveguide region. The dispersion engineered slow light waveguide region has a substantially linear dispersion relation within a predetermined operational bandwidth of the optical phased array device. The optical antenna regions are formed by an alteration of a periodic structure of the photonic crystal and are capable of radiating light out from the dispersion engineered slow light waveguide region.

A thin film optical waveguide includes a silicon-based substrate, a cladding layer arranged on the silicon-based substrate, and an optical waveguide core layer arranged on the silicon-based substrate. The optical waveguide core layer is arranged in the cladding layer, the optical waveguide core layer includes a double-layer optical waveguide dielectric thin film and a thin film material interlayer arranged between the double-layer optical waveguide dielectric thin film, the thin film material interlayer has a two-dimensional lattice sub-wavelength structure, and the effective lattice constant and the duty cycle of the two-dimensional lattice sub-waveguide structure have at least one numerical value in the same propagation direction. The thin film optical waveguide overcomes the limits of technology and materials, achieves a variable effective refractive index in same propagation direction, satisfies complex design and application scenarios, and reduces the difficulty of manufacturing the thin film optical waveguide having a variable effective refractive index.

A photonic crystal device to be used for trapping an atom and including a photonic crystal body, a slot waveguide, and an attractive force trap light laser. The photonic crystal body includes a base and a plurality of lattice elements periodically provided on the base, the slot waveguide is arranged between periodic lattice rows and includes an opening on one side face of the photonic crystal body, and the attractive force trap light laser is excited by excitation light incident from the opening and oscillates at a wavelength being longer than a wavelength of an absorption edge of the atom.

Provided is an optical scanning element, which has a large scan angle, is quickly responsive, and can be downsized. The optical scanning element includes: a photonic crystal layer having holes periodically formed in an electro-optical crystal substrate; a line-defect optical waveguide formed in the photonic crystal layer; a diffraction grating arranged in at least one portion selected from an upper portion, a left side surface portion, and a right side surface portion of the optical waveguide; and electrodes arranged on a left side and a right side of the optical waveguide. The optical scanning element is configured so that an emission angle of light emitted from an upper surface of the optical waveguide is changed.

The present disclosure relates to implementations of a photonic circuit, and particularly to a photonic circuit that includes one or more matrix circuits. For example, the present disclosure relates to photonic circuit implementations of unitary matrices, and of arbitrary real and/or complex matrices factorized using unitary matrices, that utilize special generalized Mach-Zehnder interferometers (SGMZIs) as building blocks of various matrix circuit architectures.

This invention relates generally to the field of quasicrystalline strictures. In preferred embodiments, the stopgap structure is more spherically symmetric than periodic structures facilitating the formation of stopgaps in nearly all directions because of higher rotational symmetries. More particularly, the invention relates to the use of quasicrystalline structures for optical, mechanical, electrical and magnetic purposes. In some embodiments, the invention relates to manipulating, controlling, modulating and directing waves including electromagnetic, sound, spin, and surface waves, for pre-selected range of wavelengths propagating in multiple directions.

A photonic chip is disclosed that comprises a cladding material and an edge coupler. The edge coupler comprises a composite guiding structure that comprises a plurality of substantially parallel planar layers of optical guiding material. Each layer of the composite guiding structure extends into the cladding material, wherein each layer is aligned at a first edge of the photonic chip. The layers overlap along a first axis which is perpendicular to a plane of the planar layers of optical guiding material. The photonic chip is arranged for deposition of a waveguide on the cladding material, the waveguide being arranged to at least partially overlap along the first axis with a layer of the composite guiding structure.

Also disclosed is a method of manufacturing a photonic chip.