The present disclosure relates to semiconductor structures and, more particularly, to a photonic chip security structure and methods of manufacture. The structure includes an optical component and a photonic chip security structure having a vertical wall composed of light absorbing material surrounding the optical component.

An optical waveguide is an optical waveguide including a semiconductor quantum well structure, the optical waveguide including a first region in which the semiconductor quantum well structure is not disordered and a second region in which the semiconductor quantum well structure is disordered. The first region has a first bandgap wavelength, the second region has a second bandgap wavelength, and a region in which the semiconductor quantum well structure is disordered in such a manner that a bandgap wavelength continuously decreases from the first bandgap wavelength to the second bandgap wavelength is provided between the first region and the second region.

A system, method and device for use as a reflector for a light emitting diode (LED) are disclosed. The system, method and device include a first layer designed to reflect transverse-electric (TE) radiation emitted by the LED, a second layer designed to block transverse-magnetic (TM) radiation emitted from the LED, and a plurality of ITO layers designed to operate as a transparent conducting oxide layer. The first layer may be a one-dimension (1D) distributed Bragg reflective (DBR) layer. The second layer may be a two-dimension (2D) photonic crystal (PhC), a three-dimension (3D) PhC, and/or a hyperbolic metamaterial (HMM). The 2D PhC may include horizontal cylinder bars, vertical cylinder bars, or both. The system, method and device may include a bottom metal reflector that may be Ag free and may act as a bonding layer.

The present invention discloses an high-contrast photonic crystal “OR”, “NOT” and “XOR” logic gate, comprising a six-port two-dimensional photonic crystal, a nonlinear cavity unit and a cross-waveguide logic gate unit; the high-contrast photonic crystal “OR” logic gate includes a first reference-light input port, two first idle ports, two first signal-input ports and a first signal-output port; the high-contrast photonic crystal “NOT” logic gate includes two second reference-light input ports, two second idle ports, a second signal-input port and a second signal-output port; and the high-contrast photonic crystal “XOR” logic gate includes a three reference-light input port, two three-idle ports, two three-signal input ports and a three-signal output port; the cross-waveguide logic gate unit is arranged with different input or output ports; and the nonlinear cavity unit is coupled with the cross-waveguide logic gate unit. The structure of the present invention is easy to integrate with other optical logic elements.

Various Reservoir Computing systems and a method performed by a Reservoir Computing system are provided. A Reservoir Computing system includes a laser for emitting light. The Reservoir Computing system further includes a mirror for reflecting external feedback light back to the laser. The Reservoir Computing system also includes a modulator for modulating the external feedback light reflected back to the laser. The Reservoir Computing system additionally includes a photo-detector for converting a laser output signal to an electrical signal. The Reservoir Computing system further includes an analog-to-digital converter for sampling the electrical signal. The Reservoir Computing system also includes a controller for applying a learning algorithm to the sampled electrical signal.

A photonic structure is provided. The photonic structure includes a semiconductor substrate, and an oxide structure embedded in the semiconductor substrate, and an optical coupling region directly above the buried oxide layer. A side surface of the oxide structure is exposed from an edge of the semiconductor substrate. The optical coupling region is tapered to a terminus of the optical coupling region at the edge of the semiconductor substrate.

Aspects of the present disclosure are directed to structural modifications introduced in a waveguide structure in order to more tightly pack adjacent waveguide turns in an optical gyroscope fabricated on a planar silicon platform as a photonic integrated circuit. Increasing number of turns of the gyroscope coil increases total waveguide length as well as enclosed area of the gyroscope loop, which translates to increased sensitivity to rotational measurement.

An optoelectronic device, including: light-emitting sources, each light-emitting source being capable of emitting a first radiation at a first wavelength; photoluminescent blocks distributed into first photo-luminescent blocks capable of converting by optical pumping the first radiation into a second radiation at a second wavelength and second photoluminescent blocks capable of converting by optical pumping the first radiation into a third radiation at a third wavelength; and for each photoluminescent block, an optical coupler including a first photonic crystal at least partially surrounding the photoluminescent block and covering, with the photo-luminescent block, one of the light-emitting sources next to the photoluminescent block, the optical coupler being capable of modifying the propagation direction of rays of the first radiation emitted by the light-emitting source to redirect the rays towards the photoluminescent block.

A bricked sub-wavelength periodic waveguide and a modal adapter, power divider and polarization splitter that use the waveguide. The waveguide includes blocks disposed periodically with a period “L.sub.z” on a substrate and which alternate with a covering material. The first blocks have a width “a.sub.x” and the second blocks have a width “b.sub.x”, alternating on the substrate according to a period “L.sub.x”, the second blocks being shifted a distance “d.sub.z” the first blocks in the direction of propagation. A modal adapter, a power divider and a polarization splitter all use the periodic waveguide and can operate with larger wave periods without leaving the sub-wavelength regime.

An ultralow-energy electro-optical 2×2 cross-bar switch comprises an identical pair of semiconductor nanobeams that are incorporated in the central arms of a waveguided Mach-Zehnder interferometer. Each nanobeam includes a one dimensional “lattice” of holes along the nanobeam axis that defines a resonant cavity whose fundamental mode is the operating wavelength of the switch. A localized, lateral lengthwise extending portion of the semiconductor nanobeam is doped P type, while the other lateral half of the nanobeam wing is doped N type, forming a P-N junction in the body. Application of an electric potential across the P-N junction alters the effective index of refraction of the lengthwise extending portion and controls both the transmission and reflection of an incoming optical signal at the operating wavelength of the switch through the semiconductor nanobeam. Constructive and destructive interference of component signals within the interferometer controls the spatial routing of the incident light.