A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.

A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.

A device includes a dielectric layer, a plurality of grating structures, and a dielectric material between the plurality of grating structures and on top of the plurality of grating structures. The grating structures are arranged on the dielectric layer and separated from each other, the plurality of grating structures each having a bottom portion and top portion, the top portion having a first width and the bottom portion having a second width, the second width being larger than the first width.

A device includes a dielectric layer, a plurality of grating structures, and a dielectric material between the plurality of grating structures and on top of the plurality of grating structures. The grating structures are arranged on the dielectric layer and separated from each other, the plurality of grating structures each having a bottom portion and top portion, the top portion having a first width and the bottom portion having a second width, the second width being larger than the first width.

Multilevel leaky-mode optical elements, including reflectors, polarizers, and beamsplitters. Some of the elements have a plurality of spatially modulated periodic layers coupled to a substrate. For infrared applications, the optical elements may have a bandwidth larger than 600 nanometers.

Multilevel leaky-mode optical elements, including reflectors, polarizers, and beamsplitters. Some of the elements have a plurality of spatially modulated periodic layers coupled to a substrate. For infrared applications, the optical elements may have a bandwidth larger than 600 nanometers.

A semiconductor device including an optical waveguide and a p-type semiconductor portion is configured as follows. The optical waveguide includes: a first semiconductor layer formed on an insulating layer; an insulating layer formed on the first semiconductor layer; and a second semiconductor layer formed on the insulating layer. The p-type semiconductor portion includes the first semiconductor layer. The film thickness of the p-type semiconductor portion is smaller than that of the optical waveguide. By forming the insulating layer between the first semiconductor layer and the second semiconductor layer, control of the film thicknesses of the optical waveguide and the p-type semiconductor portion is facilitated. Specifically, when the unnecessary second semiconductor layer is removed by etching in a step of forming the p-type semiconductor portion, the insulating layer which is the lower layer functions as an etching stopper, and the film thickness of the p-type semiconductor portion can be easily adjusted.

Provided are a dual coupler device configured to receive lights of different polarization components, a spectrometer including the dual coupler device, and a non-invasive biometric sensor including the spectrometer. The dual coupler device may include, for example, a first coupler layer configured to receive a light of a first polarization component among incident lights. and a second coupler layer configured to receive a light of a second polarization component among the incident lights, wherein a polarization direction of the light of the first polarization component is perpendicular to a polarization direction of the light of the second polarization component. The first coupler layer and the second coupler layer may be spaced apart from each other and extended along a direction in which the light propagates in the first coupler layer and the second coupler layer.

Provided are a dual coupler device configured to receive lights of different polarization components, a spectrometer including the dual coupler device, and a non-invasive biometric sensor including the spectrometer. The dual coupler device may include, for example, a first coupler layer configured to receive a light of a first polarization component among incident lights. and a second coupler layer configured to receive a light of a second polarization component among the incident lights, wherein a polarization direction of the light of the first polarization component is perpendicular to a polarization direction of the light of the second polarization component. The first coupler layer and the second coupler layer may be spaced apart from each other and extended along a direction in which the light propagates in the first coupler layer and the second coupler layer.

Wavelength division multiplexing (WDM) has enabled telecommunication service providers to provide multiple independent multi-gigabit channels on one optical fiber. To meet demands for improved performance, increased integration, reduced footprint, reduced power consumption, increased flexibility, re-configurability, and lower cost monolithic optical circuit technologies and microelectromechanical systems (MEMS) have become increasingly important. However, further integration via microoptoelectromechanical systems (MOEMS) of monolithically integrated optical waveguides upon a MEMS provide further integration opportunities and functionality options. Such MOEMS may include MOEMS mirrors and optical waveguides capable of deflection under electronic control. In contrast to MEMS devices where the MEMS is simply used to switch between two positions the state of MOEMS becomes important in all transition positions. Improvements to the design and implementation of such MOEMS mirrors, deformable MOEMS waveguides, and optical waveguide technologies supporting MOEMS devices are presented where monolithically integrated optical waveguides are directly supported, moved and/or deformed by a MEMS.