Patent classifications
G02B6/124
In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers
Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.
In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers
Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.
Grating with plurality of layers
A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.
Grating with plurality of layers
A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.
OPTICAL ASSEMBLY
An embodiment of the invention relates to an optical assembly comprising an optical emitter configured to generate a beam of optical radiation, a cap unit holding the optical emitter, a photonic chip comprising a coupler, and an intermediate chip arranged between the cap unit and the photonic chip, wherein the cap unit comprises a recess having a bottom section and a sidewall, wherein the optical emitter is mounted on the bottom section of the recess, wherein a section of the sidewall forms a mirror section angled with respect to the bottom section and configured to reflect said beam of optical radiation towards the coupler, and wherein the intermediate chip comprises a lens formed at a lens section of the intermediate chip's surface that faces the cap unit, said lens being configured to focus the reflected optical beam towards the coupler.
GRATINGS WITH VARIABLE DEPTHS FORMED USING PLANARIZATION FOR WAVEGUIDE DISPLAYS
A manufacturing system performs a deposition of an etch-compatible film over a substrate. The etch-compatible film includes a first surface and a second surface opposite to the first surface. The manufacturing system performs a partial removal of the etch-compatible film to create a surface profile on the first surface with a plurality of depths relative to the substrate. The manufacturing system performs a deposition of a second material over the profile created in the etch-compatible film. The manufacturing system performs a planarization of the second material to obtain a plurality of etch heights of the second material in accordance with the plurality of depths in the profile created in the etch-compatible film. The manufacturing system performs a lithographic patterning of a photoresist deposited over the planarized second material to obtain the plurality of etch heights and one or more duty cycles in the second material.
GRATINGS WITH VARIABLE DEPTHS FORMED USING PLANARIZATION FOR WAVEGUIDE DISPLAYS
A manufacturing system performs a deposition of an etch-compatible film over a substrate. The etch-compatible film includes a first surface and a second surface opposite to the first surface. The manufacturing system performs a partial removal of the etch-compatible film to create a surface profile on the first surface with a plurality of depths relative to the substrate. The manufacturing system performs a deposition of a second material over the profile created in the etch-compatible film. The manufacturing system performs a planarization of the second material to obtain a plurality of etch heights of the second material in accordance with the plurality of depths in the profile created in the etch-compatible film. The manufacturing system performs a lithographic patterning of a photoresist deposited over the planarized second material to obtain the plurality of etch heights and one or more duty cycles in the second material.
Optical probe, inspection device, and inspection method
Provided is an optical probe that includes an optical waveguide having a core layer and a cladding layer formed so as to cover the core layer, and a support member that supports an end portion of the optical waveguide. In the core layer, an optical waveguide core and a diffraction grating are provided. The diffraction grating is provided at an end of the optical waveguide core, has an input/output surface through which light is output to the outside or input from the outside, and converts the optical axis direction in a range between a light propagation direction in which light is propagated through the optical waveguide core and the input/output direction of light to/from the input/output surface. The support member supports the diffraction grating in such a manner that the input/output surface faces toward a predetermined direction.
Optical probe, inspection device, and inspection method
Provided is an optical probe that includes an optical waveguide having a core layer and a cladding layer formed so as to cover the core layer, and a support member that supports an end portion of the optical waveguide. In the core layer, an optical waveguide core and a diffraction grating are provided. The diffraction grating is provided at an end of the optical waveguide core, has an input/output surface through which light is output to the outside or input from the outside, and converts the optical axis direction in a range between a light propagation direction in which light is propagated through the optical waveguide core and the input/output direction of light to/from the input/output surface. The support member supports the diffraction grating in such a manner that the input/output surface faces toward a predetermined direction.
Method and system for coupling optical signals into silicon optoelectronic chips
A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more optical couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.