A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more optical couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

Optical integrated circuits are provided. An optical integrated circuit includes a substrate including a single crystalline semiconductor material. The optical integrated circuit includes an insulation region in a trench in the substrate. The optical integrated circuit includes a first core on the insulation region. The first core includes the single crystalline semiconductor material. Moreover, the optical integrated circuit includes a second core that is spaced apart from the first core. The second core includes a material having a refractive index that is lower than that of the first core.

A semiconductor photonic device includes a substrate, facet(s), and optical coupler(s) associated with the facet(s). Each optical coupler can couple an electromagnetic field incident on the respective facet towards a buried waveguide as the electromagnetic field proceeds into the semiconductor photonic device. In some examples, each coupler has waveguides extending in a longitudinal direction and at least partly encapsulated within a cladding layer. In some examples, at least one waveguide tapers along its length. In some examples, at least one waveguide includes spaced-apart segments arranged to form a subwavelength grating (SWG) configured to entrain electromagnetic radiation.

A semiconductor photonic device includes a substrate, facet(s), and optical coupler(s) associated with the facet(s). Each optical coupler can couple an electromagnetic field incident on the respective facet towards a buried waveguide as the electromagnetic field proceeds into the semiconductor photonic device. In some examples, each coupler has waveguides extending in a longitudinal direction and at least partly encapsulated within a cladding layer. In some examples, at least one waveguide tapers along its length. In some examples, at least one waveguide includes spaced-apart segments arranged to form a subwavelength grating (SWG) configured to entrain electromagnetic radiation.

An optical apparatus includes a diffractive optical element (DOE), having at least one optical surface, a side surface, which is not parallel to the at least one optical surface of the DOE, and a grating, which is formed on the at least one optical surface so as to receive and diffract first radiation from a primary radiation source that is incident on the grating. The apparatus further includes at least one secondary radiation source, which is configured to direct second radiation to impinge on the side surface, causing at least part of the second radiation to propagate within the DOE while diffracting internally from the grating and to exit through the side surface. The apparatus also includes at least one radiation detector, which is positioned so as to receive and sense an intensity of the second radiation that has exited through the side surface.

An optical apparatus includes a diffractive optical element (DOE), having at least one optical surface, a side surface, which is not parallel to the at least one optical surface of the DOE, and a grating, which is formed on the at least one optical surface so as to receive and diffract first radiation from a primary radiation source that is incident on the grating. The apparatus further includes at least one secondary radiation source, which is configured to direct second radiation to impinge on the side surface, causing at least part of the second radiation to propagate within the DOE while diffracting internally from the grating and to exit through the side surface. The apparatus also includes at least one radiation detector, which is positioned so as to receive and sense an intensity of the second radiation that has exited through the side surface.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.