Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

A surface grating coupler for polarization splitting or diverse includes a planar layer and an array of scattering elements arranged in the planar layer at intersections of a first set of concentric elliptical curves crossing with a second set of concentric elliptical curves rotated proximately 90 or 180 degrees to form a two-dimensional (2D) grating. Additionally, the grating coupler includes a first waveguide in double-taper shape and a second waveguide in double-taper shape respectively for split or diverse an incident light into the 2D grating into two output light to two output ports with a same (either TE or TM) polarization mode or one output port with TE polarization mode and another output port with TM polarization mode. The polarization diverse grating coupler is required to test multiple polarization sensitive photonics components and can be used with other single polarization grating coupler via a fiber array to perform wafer-level testing.

A surface grating coupler for polarization splitting or diverse includes a planar layer and an array of scattering elements arranged in the planar layer at intersections of a first set of concentric elliptical curves crossing with a second set of concentric elliptical curves rotated proximately 90 or 180 degrees to form a two-dimensional (2D) grating. Additionally, the grating coupler includes a first waveguide in double-taper shape and a second waveguide in double-taper shape respectively for split or diverse an incident light into the 2D grating into two output light to two output ports with a same (either TE or TM) polarization mode or one output port with TE polarization mode and another output port with TM polarization mode. The polarization diverse grating coupler is required to test multiple polarization sensitive photonics components and can be used with other single polarization grating coupler via a fiber array to perform wafer-level testing.

Integrated target waveguide devices and optical analytical systems comprising such devices are provided. The target devices include an optical coupler that is optically coupled to an integrated waveguide and that is configured to receive optical input from an optical source through free space, particularly through a low numerical aperture interface. The devices and systems are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The devices provide for the efficient and reliable coupling of optical excitation energy from an optical source to the optical reactions. Optical signals emitted from the reactions can thus be measured with high sensitivity and discrimination. The devices and systems are well suited for miniaturization and high throughput.

Integrated target waveguide devices and optical analytical systems comprising such devices are provided. The target devices include an optical coupler that is optically coupled to an integrated waveguide and that is configured to receive optical input from an optical source through free space, particularly through a low numerical aperture interface. The devices and systems are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The devices provide for the efficient and reliable coupling of optical excitation energy from an optical source to the optical reactions. Optical signals emitted from the reactions can thus be measured with high sensitivity and discrimination. The devices and systems are well suited for miniaturization and high throughput.

Methods and systems for a chip-on-wafer-on-substrate assembly are disclosed and may include in an optical communication system comprising an electronics die and a substrate. The electronics die is bonded to a first surface of a photonic interposer and the substrate is coupled to a second surface of the photonic interposer opposite to the first surface. An optical fiber and a light source assembly are coupled to the second surface of the interposer in one or more cavities formed in the substrate. A continuous wave (CW) optical signal may be received in the photonic interposer from the light source assembly, and a modulated optical signal may be communicated between the optical fiber and photonic interposer. The received CW optical signal may be coupled to an optical waveguide in the photonic interposer using a grating coupler.

A method is provided. The method comprises: injecting an optical carrier signal into an unbent optical waveguide between two reflectors, where the distance between two reflectors in the center of the two reflectors is substantially zero and the two reflectors undergo substantially a phase shift where the two reflectors are adjacent; creating standing waves between the two reflectors in the center, and a single resonance due to constructive interference; applying a varying electric field across the unbent optical waveguide centered between two reflectors and extending a length less than or equal to a combined length of the two reflectors; and generating a modulated carrier signal at at least one of an input and an output of the unbent optical waveguide between the two reflectors.

A method is provided. The method comprises: injecting an optical carrier signal into an unbent optical waveguide between two reflectors, where the distance between two reflectors in the center of the two reflectors is substantially zero and the two reflectors undergo substantially a phase shift where the two reflectors are adjacent; creating standing waves between the two reflectors in the center, and a single resonance due to constructive interference; applying a varying electric field across the unbent optical waveguide centered between two reflectors and extending a length less than or equal to a combined length of the two reflectors; and generating a modulated carrier signal at at least one of an input and an output of the unbent optical waveguide between the two reflectors.