A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more optical couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.

An optomechanical system including a guide structure, to guide a light beam; and two waveguide segments. Each guide structure include beams that together form two combs partially nested one in the other. At least one beam is free to move in translation along an axis orthogonal to the long axis of the guide structure. A displacement into an optical phase shift, while limiting additional effects on the intensity.

A guided light source that comprises: at least one quantum box associated with a discoid wave guide to achieve cylindrical propagation of a wave front emitted by the at least one quantum box in the discoid wave guide; an annular wave guide surrounding the discoid wave guide and having a grating coupler formed on its internal periphery to receive the wave front in normal incidence; an output wave guide optically coupled to the annular wave guide, in which the wave front is guided. The invention includes the method of fabrication of such a source, and its use for emission of a sequence of single photons.

A guided light source that comprises: at least one quantum box associated with a discoid wave guide to achieve cylindrical propagation of a wave front emitted by the at least one quantum box in the discoid wave guide; an annular wave guide surrounding the discoid wave guide and having a grating coupler formed on its internal periphery to receive the wave front in normal incidence; an output wave guide optically coupled to the annular wave guide, in which the wave front is guided. The invention includes the method of fabrication of such a source, and its use for emission of a sequence of single photons.

An optical apparatus comprising an optical device having an optical input-output face, at least two planar waveguide arms being located on a substrate, an optical splitter being located on the substrate, and, an optical grating coupler being located on the substrate. The optical splitter has an optical input and a plurality of optical outputs, each optical output being optically connected to a corresponding one of the planar waveguide arms. The optical grating coupler is connected to receive light from each planar waveguide arm and form diffraction pattern therefrom such that a principal maximum of one of the diffraction patterns overlaps with a principal maximum of another of the diffraction patterns on the optical input-output face of the optical device, the principal maxima of the one and another of the diffraction patterns being directed in different directions.

An optical apparatus comprising an optical device having an optical input-output face, at least two planar waveguide arms being located on a substrate, an optical splitter being located on the substrate, and, an optical grating coupler being located on the substrate. The optical splitter has an optical input and a plurality of optical outputs, each optical output being optically connected to a corresponding one of the planar waveguide arms. The optical grating coupler is connected to receive light from each planar waveguide arm and form diffraction pattern therefrom such that a principal maximum of one of the diffraction patterns overlaps with a principal maximum of another of the diffraction patterns on the optical input-output face of the optical device, the principal maxima of the one and another of the diffraction patterns being directed in different directions.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs-GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs-GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAsGaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a W-structured quantum well situated between two barrier layers, the W-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.