A substrate locally pre-structured for the production of photonic components including a solid part made of silicon; a first localised region of the substrate, including a heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a second localised region of the substrate, including an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer; a wave guide on the oxide layer.

A display panel includes waveguides, wires and a pixel array. The pixel array includes a plurality of pixel units. The pixel units are arranged in a plurality of columns and a plurality of rows. Each pixel unit includes a pixel electrode, a light filtering unit, and a photo transistor. The light filtering unit is coupled to one of the waveguides. The photo transistor is electrically connected to the pixel electrode and one of the wires, and is coupled to the light filtering unit. The waveguide transmits a light control signal. Each wire transmits an electric control signal. The light filtering unit is configured to receive a sub control signal from the waveguides to which the light filtering unit is coupled and filter out a specific optical signal according to the received sub control signal as an input signal of the photo transistor.

In an embodiment, a method includes: forming an interconnect including waveguides and conductive features disposed in a plurality of dielectric layers, the conductive features including conductive lines and vias, the waveguides formed of a first material having a first refractive index, the dielectric layers formed of a second material having a second refractive index less than the first refractive index; bonding a plurality of dies to a first side of the interconnect, the dies electrically connected by the conductive features, the dies optically connected by the waveguides; and forming a plurality of conductive connectors on a second side of the interconnect, the conductive connectors electrically connected to the dies by the conductive features.

In an embodiment, a method includes: forming an interconnect including waveguides and conductive features disposed in a plurality of dielectric layers, the conductive features including conductive lines and vias, the waveguides formed of a first material having a first refractive index, the dielectric layers formed of a second material having a second refractive index less than the first refractive index; bonding a plurality of dies to a first side of the interconnect, the dies electrically connected by the conductive features, the dies optically connected by the waveguides; and forming a plurality of conductive connectors on a second side of the interconnect, the conductive connectors electrically connected to the dies by the conductive features.

In an example, a photonic system includes a Si PIC with a Si substrate, a SiO.sub.2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO.sub.2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO.sub.2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

In an example, a photonic system includes a Si PIC with a Si substrate, a SiO.sub.2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO.sub.2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO.sub.2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

A device includes a waveguide grating out-coupler, and a tunable uniform phase shifter communicating with the waveguide grating out-coupler. The tunable uniform phase shifter steers a Hat phase front along a first angle in a first plane. Optionally, the waveguide grating out-coupler includes a modulated refractive index and a physical grating period. The tunable uniform phase shifter controls the refractive index, thereby controlling an effective grating period. The grating period relates to die modulated refractive index, and the physical grating period. Optionally, the tunable uniform phase shifter includes a first thermo-optic phase shifter, a first electro-optic phase shifter, or a first micro-electro-mechanical system index perturbation phase shifter. Optionally, the tunable linear gradient phase shifter communicates with the waveguide grating out-coupler and steers a beam along the flat phase front along a second angle in a second plane, which is perpendicular to the first plane.

A device includes a waveguide grating out-coupler, and a tunable uniform phase shifter communicating with the waveguide grating out-coupler. The tunable uniform phase shifter steers a Hat phase front along a first angle in a first plane. Optionally, the waveguide grating out-coupler includes a modulated refractive index and a physical grating period. The tunable uniform phase shifter controls the refractive index, thereby controlling an effective grating period. The grating period relates to die modulated refractive index, and the physical grating period. Optionally, the tunable uniform phase shifter includes a first thermo-optic phase shifter, a first electro-optic phase shifter, or a first micro-electro-mechanical system index perturbation phase shifter. Optionally, the tunable linear gradient phase shifter communicates with the waveguide grating out-coupler and steers a beam along the flat phase front along a second angle in a second plane, which is perpendicular to the first plane.

According to one example, the present application discloses an optical circuit comprising a grating to receive input light of mixed polarizations and output light of a same polarization to a first waveguide and a second waveguide. The first waveguide and second waveguide are optically coupled to a plurality of resonators that are coupled to a plurality of gratings that are to output light of mixed polarizations.

According to one example, the present application discloses an optical circuit comprising a grating to receive input light of mixed polarizations and output light of a same polarization to a first waveguide and a second waveguide. The first waveguide and second waveguide are optically coupled to a plurality of resonators that are coupled to a plurality of gratings that are to output light of mixed polarizations.