A photonic polarizing beamsplitter is disclosed. The beamsplitter comprises a first waveguide, a second waveguide located above the first waveguide, and a birefringent coupler between the first waveguide and the second waveguide. The birefringent coupler has an effective refractive index for a TM mode which is greater than a refractive index of the first waveguide, and an effective refractive index for a TE mode which is less than the refractive index of the first waveguide. The second waveguide comprises a plurality of outwardly tapering legs with a gap between adjacent legs that are connected downstream to a body. The vertical beamsplitter uses less surface area.

A digital measuring device implemented on a photonic integrated circuit, the digital measuring device including a laser source implemented on the photonic integrated circuit configured to provide light, a first waveguide structure implemented on the photonic integrated circuit configured to direct a first portion of light from the laser source at a moving object and receive light reflected from the moving object, a second waveguide structure implemented on the photonic integrated circuit configured to combine a second portion of light from the laser source with the light reflected from the moving object to produce a measurement beam, a first multiplexer implemented on the photonic integrated circuit configured to split the measurement beam into a plurality of channels, and a plurality of detectors implemented on the photonic integrated circuit configured to detect an intensity value of each channel to measure a distance between the digital measuring device and the moving object.

A digital measuring device implemented on a photonic integrated circuit, the digital measuring device including a laser source implemented on the photonic integrated circuit configured to provide light, a first waveguide structure implemented on the photonic integrated circuit configured to direct a first portion of light from the laser source at a moving object and receive light reflected from the moving object, a second waveguide structure implemented on the photonic integrated circuit configured to combine a second portion of light from the laser source with the light reflected from the moving object to produce a measurement beam, a first multiplexer implemented on the photonic integrated circuit configured to split the measurement beam into a plurality of channels, and a plurality of detectors implemented on the photonic integrated circuit configured to detect an intensity value of each channel to measure a distance between the digital measuring device and the moving object.

The optical device coupleable to a waveguide to receive an optical signal from the waveguide generally has at least two optical grating devices optically coupled to one another and having corresponding spectral responses, the spectral response of at least one of said optical grating devices being tunable to adjust an amount of overlapping between the spectral responses of the at least two optical grating devices.

The optical device coupleable to a waveguide to receive an optical signal from the waveguide generally has at least two optical grating devices optically coupled to one another and having corresponding spectral responses, the spectral response of at least one of said optical grating devices being tunable to adjust an amount of overlapping between the spectral responses of the at least two optical grating devices.

Embodiments of the present disclosure may relate to a digitized grating that may include a first unit cell that has a first period and a first length, where the first period includes a first grating element width and a first space between adjacent grating elements, and where the first length includes a number of first periods. The digitized grating may further include a second unit cell that has a second period and a second length, where the second period is different than the first period and includes a second grating element width and a second space between adjacent grating elements, and where the second length includes a number of second periods.

Provided is a wavelength filter including: an optical waveguide core that includes n (n is an integer greater than or equal to 2) number of mode conversion parts and n1 number of cavity parts that are alternately connected to each other in series; and cladding that surrounds the optical waveguide core. The mode conversion parts convert light having a specific wavelength of a p-order mode (p is an integer satisfying p0) into light of a q-order mode (q is an integer satisfying q>p) and reflect the light. The cavity parts match phases of the light having the specific wavelength of the p-order mode propagating through the cavity part.

Provided is a wavelength filter including: an optical waveguide core that includes n (n is an integer greater than or equal to 2) number of mode conversion parts and n1 number of cavity parts that are alternately connected to each other in series; and cladding that surrounds the optical waveguide core. The mode conversion parts convert light having a specific wavelength of a p-order mode (p is an integer satisfying p0) into light of a q-order mode (q is an integer satisfying q>p) and reflect the light. The cavity parts match phases of the light having the specific wavelength of the p-order mode propagating through the cavity part.

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.