Various embodiments of the present disclosure are directed towards an integrated chip including an optical device disposed on a substrate. A dielectric structure overlies the substrate. The dielectric structure comprises one or more sidewalls defining a light channel over a region of the optical device. A protective structure is above the optical device and disposed on opposing sides of the light channel.

Optical waveguides and couplers for delivering light to an array of photonic elements in a photonic integrated device. The photonic integrated device and related instruments and systems may be used to analyze samples in parallel. The photonic integrated device may include a grating coupler configured to receive light from an external light source and optically couple with multiple waveguides configured to optically couple with sample wells of the photonic integrated device.

Optical waveguides and couplers for delivering light to an array of photonic elements in a photonic integrated device. The photonic integrated device and related instruments and systems may be used to analyze samples in parallel. The photonic integrated device may include a grating coupler configured to receive light from an external light source and optically couple with multiple waveguides configured to optically couple with sample wells of the photonic integrated device.

An atom control architecture based on VIS-IR photonic integrated circuit (PIC) technology is characterized by (1) visible (VIS) and near-infrared (IR) wavelength operation, (2) channel counts extensible beyond 1000s of individually addressable atoms, (3) high intensity modulation extinction and (4) repeatability compatible with low gate errors, and (5) fast switching times. A 16-channel SiN-based APIC with (5.8±0.4) ns response times and <−30 dB extinction ratio at a wavelength of 780 nm. Based on a complementary metal-oxide-semiconductor (CMOS) fabrication process, this atom-control PIC (APIC) technology can be used for atomic, molecular, and optical physics and emerging applications, from quantum computers with cold atoms or ions to quantum networks with solid-state color centers. This APIC technology is especially suitable for scalable quantum information processing based on optically programmable atomic systems.

An atom control architecture based on VIS-IR photonic integrated circuit (PIC) technology is characterized by (1) visible (VIS) and near-infrared (IR) wavelength operation, (2) channel counts extensible beyond 1000s of individually addressable atoms, (3) high intensity modulation extinction and (4) repeatability compatible with low gate errors, and (5) fast switching times. A 16-channel SiN-based APIC with (5.8±0.4) ns response times and <−30 dB extinction ratio at a wavelength of 780 nm. Based on a complementary metal-oxide-semiconductor (CMOS) fabrication process, this atom-control PIC (APIC) technology can be used for atomic, molecular, and optical physics and emerging applications, from quantum computers with cold atoms or ions to quantum networks with solid-state color centers. This APIC technology is especially suitable for scalable quantum information processing based on optically programmable atomic systems.

A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.

A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.

An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

Apparatus and methods relating to coupling radiation from an incident beam into a plurality of waveguides with a grating coupler are described. A grating coupler can have offset receiving regions and grating portions with offset periodicity to improve sensitivity of the grating coupler to misalignment of the incident beam.