The present disclosure relates to a USB 2.0 photoelectric transmission system, which includes a first USB 2.0 connector, a second USB 2.0 connector, a first signal directional interpreting circuit, a second signal directional interpreting circuit, a first laser, a second laser, a first photodetector and a second photodetector, wherein a first end and a second end of the first signal directional interpreting circuit are respectively connected with a D+ pin and a D− pin of the first USB 2.0 connector; a third end and a fourth end of the first signal directional interpreting circuit are respectively connected with the first laser and the second photodetector.

A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Embodiments herein describe using a double wafer bonding process to form a photonic device. In one embodiment, during the bonding process, an optical element (e.g., a high precision optical element) is optically coupled to an optical device in an active surface layer. In one example, the optical element comprises a nitride layer which can be patterned to form a nitride waveguide, passive optical multiplexer or demultiplexer, or an optical coupler.

The present disclosure relates to an active optical cable connector and an active optical cable assembly. The active optical cable connector includes a power supply interface, an optoelectronic conversion module and a short-range wireless communication module, wherein the power supply interface is electrically connected with the optoelectronic conversion module and the short-range wireless communication module, respectively, and the short-range wireless communication module is configured to transmit a control signal and a low-speed signal of the active optical cable.

An optical waveguide package includes a substrate including a first surface and a second surface opposite to the first surface, a cladding located on the second surface and including a third surface facing the second surface, a fourth surface opposite to the third surface, and an element-receiving portion with an opening in the fourth surface, a core located in the cladding and extending from the element-receiving portion, and a first metal member located in the element-receiving portion in a plan view as viewed in a direction toward the fourth surface and including an element mount. The first metal member is connected to a second metal member with a first via conductor extending through the substrate from the first surface to the second surface.

Provided is an optical element module comprising: a mold body having a first surface formed on an upper portion thereof and a second surface formed on a lower portion thereof; an external connection terminal formed on the first surface and electrically connected to the outside; an optical engine embedded and sealed between the first surface and the second surface and having a connection pad exposed to the second surface; a conductive vertical via formed to penetrate the first surface and the second surface and having one end portion electrically connected to the external connection terminal; a wiring layer formed on the second surface to interconnect the other end of the conductive vertical via and the connection pad of the optical engine; and a reflective surface integrally formed on the wiring layer and transmits an optical signal generated by the optical engine or received by the optical engine.

A first photonic die has a first coupling edge and a first die surface, and comprises: a first waveguide extending in proximity to the first coupling edge; a portion of the first die surface forming an alignment edge substantially parallel to the first waveguide; and a first alignment feature etched into or formed adjacent to the first coupling edge. A second photonic die has a second coupling edge and a second die surface, and comprises: a second waveguide extending in proximity to the second coupling edge; a portion of the second die surface configured to form a receptacle sized to constrain a position of the alignment edge; and a second alignment feature etched into or formed adjacent to the second coupling edge and configured to enable alignment with the first alignment feature when the first photonic die and the second photonic die are substantially aligned with each other.

Embodiments herein describe using a double wafer bonding process to form a photonic device. In one embodiment, during the bonding process, an optical element (e.g., a high precision optical element) is optically coupled to an optical device in an active surface layer. In one example, the optical element comprises a nitride layer which can be patterned to form a nitride waveguide, passive optical multiplexer or demultiplexer, or an optical coupler.

An optoelectronic package structure and a method of manufacturing an optoelectronic package structure are provided. The optoelectronic package structure includes a photonic component. The photonic component has an electrical connection region, a blocking region and a region for accommodating a device. The blocking region is located between the electrical connection region and the region for accommodating a device.

Gallium nitride (GaN) integrated circuit technology with optical communication is described. In an example, an integrated circuit structure includes a layer or substrate having a first region and a second region, the layer or substrate including gallium and nitrogen. A GaN-based device is in or on the first region of the layer or substrate. A CMOS-based device is over the second region of the layer or substrate. An interconnect structure is over the GaN-based device and over the CMOS-based device, the interconnect structure including conductive interconnects and vias in a dielectric layer. A photonics waveguide is over the interconnect structure, the photonics waveguide including silicon, and the photonics waveguide bonded to the dielectric layer of the interconnect structure.