A semiconductor arrangement and a method of forming the same are described. A semiconductor arrangement includes a first layer including a first optical transceiver and a second layer including a second optical transceiver. A first serializer/deserializer (SerDes) is connected to the first optical transceiver and a second SerDes is connected to the second optical transceiver. The SerDes converts parallel data input into serial data output including a clock signal that the first transceiver transmits to the second transceiver. The semiconductor arrangement has a lower area penalty than traditional intra-layer communication arrangements that do not use optics for alignment, and mitigates alignment issues associated with conventional techniques.

Apparatuses and methods for a temperature insensitive electro-absorption modulator and laser. The device comprising a laser capable of emitting light. The laser itself includes a laser gain section, a first mirror and a second mirror. Each of the mirrors are coupled to the laser gain section. The laser gain section contains quantum wells. The first mirror and the second mirror have a wavelength bandwidth sufficient for a lasing wavelength range of the laser. A modulator is coupled to the laser to receive the light and is capable of modulating the light to vary the output from the modulator. The modulator contains quantum wells and has a quantum well confinement factor that is greater than 0.1. An output coupler is coupled to the modulator and the output coupler has a back reflection that is less than half of a back reflection of the second mirror. The laser has a lasing wavelength that tracks the absorption spectrum of the modulator. The device is operated at a temperature range comprising a first temperature and a second temperature, wherein the second temperature is greater than the first temperature by at least 15 degrees Celsius.

Provided is a technique for enabling an α parameter to be approximated to zero. A multiple quantum well structure includes a layer structure including a first barrier layer, an intermediate layer, a well layer, and a second barrier layer. The conduction band energies of the first and second barrier layers, the intermediate layer, and the well layer are larger in this order, and the valence band energies of the intermediate layer, the well layer, and the first and second barrier layers are larger in this order.

Preferable simultaneous achievement of the target characteristics with respect to both of the modulation bandwidth and the extinction ratio in the optical intensity modulation using the electro-absorption optical modulator is realized with a simple circuit configuration. The modulator integrated semiconductor laser element includes a plurality of EA modulators disposed in series in an optical signal path, and each adapted to absorb light in accordance with an applied voltage. The modulator driver for supplying the EA modulator with the applied voltage is provided for each of the EA modulators. The plurality of modulator drivers generates the applied voltage common to the plurality of EA modulators in accordance with a control signal. The modulator lengths of the plurality of EA modulators are set so that the closer to the light source the EA modulator is, the shorter the modulator length is.

A radio-frequency three-dimensional electronic-photonic integrated circuit (RF 3D EPIC) comprises a radio-frequency (RF) photonic integrated circuit (PIC) layer, the RF PIC layer comprising, in a single integrated circuit, at least one RF antenna and at least one photonic device coupling the RF antenna to an optical interface, and further comprises an electronic-photonic integrated circuit (EPIC) assembly optically coupled to the optical interface of the RF PIC layer, the EPIC assembly comprising two or more integrated-circuit dies bonded to one another so as to form a die stack, wherein at least one of the two or more integrated-circuit dies comprises one or more integrated photonic devices and wherein each of the two or more integrated-circuit dies is electrically connected to at least one other integrated-circuit die via an electrically conductive through-wafer interconnect or an electrically conductive through-wafer via.

A hybrid electronic optical chip has a first photonic element with which a first diode is associated, a second photonic element with which a second diode is associated and a common electrical driver connected to the first and second diodes by a common electrical connection with opposite polarity. The electrical driver generates a common electrical drive signal divided in time into first and second drive signal components for independently driving the first and second photonic elements through the common electrical connection.

The optical device includes a waveguide positioned on a base and a modulator positioned on the base. The modulator includes a ridge of an electro-absorption medium having a top side and a lateral side. The lateral side is between the top side and the base and the top side has a width. The waveguide is configured to guide a light signal through the modulator such that the light signal is guided through the ridge of electro-absorption medium. A heater is positioned over the lateral side of the electro-absorption medium without being positioned over the entire width of the ridge.

Systems and methods for performing non-destructive sensing of a cell or tissue, in vivo or in culture, are provided. The disclosed systems and methods include fabricating and powering one or more implantable integrated circuit (IC) chips that include a network of Photovoltaic (PV) cells for energy harvesting from an optical energy source, an optical modulator integrating Quantum Dot capacitors (QD-caps) for optical data transfer using fluorescence modulation, and sensing circuitry. The IC chip disclosed herein can measure a thickness of around 10 μm, allowing injection into small cells and diffusion through tissue, it is powered and imaged under a microscope and communicates using fluorescence modulation imaged under a microscope.

An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 μm away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.

A method for increasing the bandwidth of an electroabsorption modulator (EAM) includes the following steps. First, a plurality of p-i-n active waveguides for the EAM are defined on a p-i-n optical waveguide forming an EAM having a shorter p-i-n active waveguide length. Then, the bandwidth of the EAM can be increased. Second, the high-impedance transmission lines are used in series to connect the EAM sections to reduce the microwave reflection and then increase the device bandwidth. Finally, the impedance-controlled transmission lines for the signal input and output can not only reduce the parasitic effects resulting from packaging, but also reduce the microwave reflection resulting from the impedance mismatch at the device input and load.