A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.

A hybrid electronic optical chip has a first photonic element with which a first diode is associated, a second photonic element with which a second diode is associated and a common electrical driver connected to the first and second diodes by a common electrical connection with opposite polarity. The electrical driver generates a common electrical drive signal divided in time into first and second drive signal components for independently driving the first and second photonic elements through the common electrical connection.

[Problem] To provide a novel optical network which can be used as an in-vehicle optical backbone network and exhibits high capacity, low delay, low power consumption, low noise and low cost. [Solution] An optical network system, wherein: a signal processing unit 13 controls a light source 11, and generates an optical signal which includes an information portion to be read by one of the gateway units 5a, and a continuous light portion to be written thereby; a network control unit 15 generates an electrical signal which designates a gate y unit 5a and pertains to whether the information incorporated into the optical signal is to be read or written; and when designated by the electrical signal, each of the gateway units 5a transfers information to and from an electronic control unit 7, and reads information included in the corresponding optical signal or writes information in the continuous light portion, on the basis of the information included in the electrical signal about whether to read or write information.

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm.sup.2.

Systems and methods for performing non-destructive sensing of a cell or tissue, in vivo or in culture, are provided. The disclosed systems and methods include fabricating and powering one or more implantable integrated circuit (IC) chips that include a network of Photovoltaic (PV) cells for energy harvesting from an optical energy source, an optical modulator integrating Quantum Dot capacitors (QD-caps) for optical data transfer using fluorescence modulation, and sensing circuitry. The IC chip disclosed herein can measure a thickness of around 10 μm, allowing injection into small cells and diffusion through tissue, it is powered and imaged under a microscope and communicates using fluorescence modulation imaged under a microscope.

A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.

An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

An optoelectronic device and a method of manufacturing the same. The device comprising: a multi-layered optically active stack; an input waveguide, arranged to guide light into the stack; an output waveguide, arranged to guide light out of the stack; and anti-reflective coatings, located between both the input waveguide and the stack and the stack and the output waveguide; wherein the input waveguide and output waveguide are formed of silicon nitride.

An optical transceiver including a submount, a Mach-Zehnder Modulator (MZM), bonding wires, and a low pass filter type matching network is provided. The MZM includes an input port and an output port and disposed on the submount. The bonding wires are coupled to the submount and the MZM. The low pass filter type matching network is coupled to the bonding wires and is configured to absorb inductance of the bonding wires at a high frequency.

Disclosed is a quantum-confined Stark effect (QCSE) modulator. In the modulator, a first doped semiconductor region has a first type conductivity, is at the bottom of a trench in a dielectric layer and is immediately adjacent to a semiconductor layer. An MQW region is in the trench on the first doped semiconductor region and at least upper segments of sidewalls of the MQW region are angled away from adjacent sidewalls of the trench such that there are spaces between the MQW region and the dielectric layer. Dielectric spacers fill the spaces. A second doped semiconductor region has a second type conductivity, is on top of the MQW region and optionally extends laterally onto the tops of the dielectric spacers. The spacers prevent shorting of the doped semiconductor regions. Also disclosed are embodiments of a photonics structure including the modulator and of methods for forming the modulator and the photonics structure.