A detector remodulator comprising a silicon on insulator (SOI) waveguide platform including: a detector coupled to a first input waveguide; a modulator coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the detector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another; and wherein the modulator includes a modulation waveguide region at which a semiconductor junction is set horizontally across the waveguide.

Novel use of a cladded quantum dot array layer serving as a waveguide channel by sandwiching it between two cladding layers comprised of lower index of refraction materials is described to form Si nanophotonic devices and integrated circuits. The photonic device structure is compatible with Si nanoelectronics using conventional, quantum dot gate (QDG), and quantum dot channel (QDC) FET based logic, memories, and other integrated circuits.

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm.sup.2.

Provided is an electro-absorption modulator that includes a substrate, a mesa structure, a first conductivity type electrode, and a second conductivity type electrode. The first conductivity type electrode includes a mesa-top electrode, a pad electrode, and a lead-out wire electrode. The mesa structure has a light input end, to which light is to be input from outside, and a light output end, which is on a side of the mesa structure that is opposite of the light input end. A connection position between a center position in a short-side direction of the lead-out wire electrode and the mesa-top electrode is closer to the light output end side in a long-side direction of the mesa-top electrode. The connection position is a position that is less than 50% from the light output end side with respect to a length in the long-side direction of the mesa-top electrode.

Systems and methods are described herein for an electro-absorption modulator (EAM) device. An example EAM device comprises an optical waveguide comprising a waveguide core configured to facilitate propagation and modulation of an optical signal therethrough; a segmented structure comprising diode segments disposed on the waveguide; and an electrical transmission line operatively coupled to the diode segments. The electrical transmission line is configured to facilitate propagation of an electrical signal therethrough. The electrical transmission line includes a first transmission line rail and a second transmission line, where a first subset of diode segments is operatively coupled to the first transmission line rail and a ground rail, and a second subset of diode segments is operatively coupled to the second transmission line and the ground rail. The diode segments from the first subset are disposed alternately with the diode segments from the second subset.

A semiconductor device comprising a substrate; a monolithic gain region disposed on the substrate and operable to produce optical gain in response to current injection, including a first electrode over a first portion of the gain region having a first length L.sub.1, with a first current I.sub.1 being applied; and a second electrode over a second portion of the gain region having a second length L.sub.2, with a second current I.sub.2 being applied; wherein I.sub.1/L.sub.1 is greater than I.sub.2/L.sub.2.

Electro-optical modulators and methods of fabrication are disclosed. An electro-optical modulator includes a Mach-Zehnder interferometer formed in a substrate removed semiconductor layer and a coplanar waveguide. Signals from the coplanar waveguide are capacitively coupled to the Mach-Zehnder interferometer through first and second dielectric layers.

A device for transmitting and/or modulating in-phase and quadrature optical signals generated by an optical source. This device includes modulators each arranged for modulating intensity of optical signals depending on commands, and at least three main multi-mode interferometers set in series and arranged for transforming in combination a received optical signal with an initial phase state into a final optical signal with a final phase state differing from this initial phase state by an accumulated phase shift chosen from a group including 0, /2, and 3/2 and depending from the intensity modulations carried out by the modulators.

In an EADFB laser with an integrated SOA, a new configuration in which deterioration of optical waveform quality is solved or mitigated while taking advantage of characteristics that the same layer structure can be used and the manufacturing process can be simplified is shown. In an optical transmitter of the present disclosure, a carrier density is optimized depending on a light intensity inside the SOA and an amount of carrier consumption. The SOA is electrically separated into a plurality of regions, and a current is injected into each region independently. The divided SOA region is configured so that a length of the SOA region becomes shorter as a region is farther from an incidence end of the SOA. Further, for the divided SOA, an amount of carrier consumption increases as the SOA region is farther from the incidence end, so that a current injection amount is increased.

The disclosed technology generally relates to an electro-optical device based on III-V and/or II-VI and/or group IV semiconductors. In one aspect, the electro-optical device includes a support region and a ridge structure extending from the support region. The ridge structure includes a bottom region provided on the support region and having at least one layer of a first semiconductor material that has a first conductivity type. The ridge structure also includes an intermediate region provided on the bottom region and having an active region. The intermediate region further includes at least one layer of a second semiconductor material, and has a trapezoid-shaped top region with a top surface, side surfaces, and inclined surfaces connecting the top surface to the side surfaces. The ridge structure also includes a capping layer provided on the side surfaces and the inclined surfaces of the intermediate region and having at least one layer of a third semiconductor material that has a higher band-gap than the second semiconductor material. The ridge structure also includes a fin structure extending upwards from the top region and having at least one layer of a fourth semiconductor material that has a second conductivity type.