G02F1/01791

QUANTUM CONFINED NANOSTRUCTURES WITH IMPROVED HOMOGENEITY AND METHODS FOR MAKING THE SAME
20220357602 · 2022-11-10 ·

A method that includes: providing a substrate including a layer of a crystalline material having a first surface; and exposing the first surface to an environment under conditions sufficient to cause epitaxial growth of a layer of a deposition material on the first surface, wherein exposing the first surface to the environment includes illuminating the substrate with light at a first wavelength while causing the epitaxial growth of the layer of the deposition material. The first surface includes one or more discrete growth sites at which an epitaxial growth rate of the quantum confined nanostructure material is larger than areas of the first surface away from the growth sites by an amount sufficient so that the deposition material forms a quantum confined nanostructure at each of the one or more discrete growth sites.

Display device

A display device includes a first display panel including a light emitting element; a light condensing element at a side portion of the first display panel; a light guide plate below the first display panel; The light condensing element transmits external light to the light guide plate.

LIGHT MODULATOR, BEAM STEERING DEVICE INCLUDING THE LIGHT MODULATOR, AND ELECTRONIC DEVICE INCLUDING THE BEAM STEERING DEVICE

A light modulator for amplifying an intensity of incident light and modulating a phase of the incident light is provided. The light modulator includes: a first distributed Bragg reflector (DBR) layer having a first reflectivity and comprising at least two first refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; a second DBR layer having a second reflectivity and comprising at least two second refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; and an active layer disposed between the first DBR layer and the second DBR layer, and comprising a quantum well structure.

DISPLAY APPARATUS

A display apparatus includes a liquid crystal panel; light sources configured to emit blue light; a reflective sheet including four edge portions and a first hole and a second hole on each of the four edge portions of the reflective sheet, the first hole disposed at a first distance from an edge of the reflective sheet, and the second hole disposed at a second distance from the edge of the reflective sheet, wherein the second distance is greater than the first distance; and first and second light conversion dots, wherein the first light conversion dots are disposed around the first hole of the reflective sheet, and the second light conversion dots are disposed around the second hole of the reflective sheet, wherein a size of each of the first light conversion dots is greater than a size of each of the second light conversion dots.

DISPLAY DEVICE AND LIGHT ABSORBER FOR DISPLAY DEVICE

A display device includes a substrate, a display element layer disposed on the substrate, and a protective layer disposed on the display element layer. The display device contains a light absorber represented by Formula 1, and the damage to the display device that may be caused by the UV-A light in the wavelength range of about 315 nm to about 400 nm may be prevented or reduced, and the reliability of the display device may be maintained:

##STR00001##

Finfet quantum structures utilizing quantum particle tunneling through local depleted well

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

Filter structure and method for manufacturing same, and display device

A filter structure and a method for manufacturing the same, and a display device. The filter structure includes a base substrate and a plurality of filter units positioned on the base substrate, at least part of the filter units including a quantum dot filter layer. The filter units further include a reflective structure whose orthographic projection on the base substrate surrounds the orthographic projection of the quantum dot filter layer on the base substrate. A distance between a plane of the reflective structure away from the base substrate and the base substrate is greater than a distance between a plane of the quantum dot filter layer close to the base substrate and the base substrate.

Quantum dot glass aging device and aging method thereof

A quantum dot (“QD”) glass aging device including a bottom part including a flat surface defined by a first direction and a second direction intersecting the first direction; a side wall part including a side surface defined by the first direction and a third direction intersecting the bottom part, and a seating part disposed between the bottom part and the side wall part. The seating part includes a plurality of protrusion parts extending in the first direction and arranged in the second direction. A plurality of QD glasses is arranged on the plurality of protrusion parts. A plurality of light sources is disposed in the plurality of grooves defined between the protrusion parts and between the side wall part and a first protrusion part adjacent to the side wall part. Heights of upper surfaces of the protrusion parts gradually decrease from the side wall part to the bottom part.

Reprogrammable quantum processor architecture incorporating quantum error correction

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin.

LAYERED STRUCTURES, PRODUCTION METHODS THEREOF, AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME
20210382331 · 2021-12-09 ·

A layered structure including a transparent substrate; a photoluminescent layer disposed on the transparent substrate and a pattern of a quantum dot polymer composite; and a capping layer disposed on the photoluminescent layer and including an inorganic material, a method of producing the same, a liquid crystal display including the same. The quantum dot polymer composite includes a polymer matrix; and a plurality of quantum dots in the polymer matrix, the pattern of the quantum dot polymer composite includes at least one repeating section and the repeating section includes a first section configured to emit light of a first peak wavelength, the inorganic material is disposed on at least a portion of a surface of the repeating section, and the inorganic material includes a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof.