A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VL product of 0.3 V.cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

A thin-plate LN optical control device includes: a thin-plate LN optical waveguide element which includes an optical waveguide formed by thermal diffusion of Ti in a substrate made of lithium niobate, and a control electrode that is formed on the substrate and is configured to control a light wave propagating through the optical waveguide, and in which at least a part of the substrate is thinned; and a housing that accommodates the thin-plate LN optical waveguide element in an air-tight sealing manner. Oxygen is contained in a filler gas inside the housing.

A functional optical device is disclosed. The functional optical device integrates a coupling unit, a waveguide photodiode (PD) and an optical waveguide on a semiconductor substrate. The coupling unit extracts an optical signal by performing interference of signal light with local light. The optical waveguide carries the optical signal from the coupling unit to the waveguide PD. The semiconductor substrate provides a heavily doped conducting layer and a buffer layer that is un-doped or lightly doped with n-type impurities by density smaller than density of impurities in the heavily doped conducting layer. The conducting layer and the buffer layer continuously and evenly extend from the optical waveguide to the waveguide PD.

An electro-optical circuit in which diode-like electrical characteristics of an optical modulator employed therein are used to generate one or more DC-offset levels that place the optical modulator into a proper electrical operating configuration for modulating light transmitted therethrough. In an example embodiment, the optical modulator includes an optical waveguide comprising at least a portion of a semiconductor diode connected to a data driver using a clamping circuit, the clamping circuit being configured to cause a data-modulated electrical signal outputted by the data driver to set a DC-offset level applied to the semiconductor diode. As a result, the use of on-chip and/or on-board bias-tees can advantageously be avoided. In some embodiments, the optical modulator can be driven using two different data signals, each used to set a different respective DC-offset level at the semiconductor diode. In various embodiments, the optical modulator can be an intensity modulator and/or a phase modulator.

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VL product of 0.3 V.Math.cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

An electro-holographic light field generator device comprises surface acoustic wave (SAW) optical modulators arranged in different directions. Specifically, some embodiments have SAW modulators arranged in pairs, nose-to-nose with each other, and have output couplers that provide face-fire light emission. These SAW modulators also possibly include SAW sense transducers and/or viscoelastic surface material to reduce crosstalk.

A data center includes a wavelength source, a first optical component, a first communications device, and a second communications device. The wavelength source is configured to generate an N-wavelength laser beam. The first port of the first optical component is configured to receive an M-wavelength laser beam from the wavelength source. The second port of the first optical component is configured to send the M-wavelength laser beam to the first communications device. The M-wavelength laser beam includes at least a first-wavelength laser beam. The second port of the first optical component is further configured to receive a modulated first optical signal from the first communications device, the modulated first optical signal is obtained after the first communications device modulates a service signal onto the first-wavelength laser beam. The third port of the first optical component is configured to send the modulated first optical signal to the second communications device.

An optical device includes a thin film Lithium Niobate (LN) layer, a first optical waveguide, and a second optical waveguide. The thin film LN layer is an X-cut or a Y-cut LN layer. The first optical waveguide is an optical waveguide that is formed on the thin film LN layer along a direction that is substantially perpendicular to a Z direction of a crystal axis of the thin film LN layer. The second optical waveguide is an optical waveguide that is routed and connected to the first optical waveguide. At least a part of a core of the first optical waveguide is made thicker than a core of the second optical waveguide.

The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A acentral area of an outer surface of an added layer atop a spin Hall material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.

An optical device is described. This optical device includes an electro-optical material having an X-cut, Y-propagate orientation. In particular, a Y crystallographic direction of the electro-optical material is parallel to an optical waveguide defined in the electro-optic material and an X crystallographic direction of the electro-optical material is parallel to a vertical direction of the optical device. By applying drive signals having an angular frequency to the electro-optic material, the optical device may perform modulation, corresponding to a traveling-wave configuration, of an optical signal based at least in part on the drive signals. where the modulation involves a polarization conversion and a frequency shift. The angular frequency of the drive signals may be selected to approximately cancel electro-optic cross terms in X-Z plane of the electro-optical material. Moreover, an amplitude of the drive signals may be selected so that the optical device emulates a half-wave-plate configuration.