Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

An electrochromic device according to an embodiment includes a first transparent conductive layer, an ion storage layer, an electrolyte layer, an electrochromic layer, and a second transparent conductive layer. The electrolyte layer includes a tantalum atom. The electrochromic layer includes a tungsten atom. The ion storage layer includes an iridium atom and a tantalum atom. The ion storage layer is hydrogenated in bleached state and the electrochromic device has a transmittance of 64.1% or more in bleached state. A difference between the transmittance of the electrochromic device in bleached state and the transmittance of the electrochromic device in colored state is 8.4% or more.

The disclosure relates generally to a method of changing an optical state of an electrochromic device. The method may include: selecting a desired optical state of the electrochromic device; determining a driving power to change the optical state based on an initial state and the desired state of the electrochromic device. The driving power comprises a first magnitude and a second magnitude, and the first magnitude is larger than the second magnitude. The method may further include: applying the driving power with the first magnitude to the electrochromic device for a period of time t; and at time t, switching the driving power to the second magnitude.

Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

The present invention relates to an electrochromic solution and a use thereof, wherein the said solution comprises: a solvent; a thickening polymer agent having a molecular weight of at least 50,000 g/mol, preferably 200,000 g/mol, more preferably of at least 250,000 g/mol; at least an additive having a molecular weight between 300 and 50,000 g/mol, preferably between 320 and 20,000 g/mol; a redox chemical mixture in solution in said solvent said mixture being constituted of at least one electrochromic reducing compound and at least one electrochromic oxidizing compound, and which colors in the presence of an applied voltage and which bleaches to a colorless condition in the absence of an applied voltage. The invention further relates to a device comprising said solution.

A free-standing polymer electrolyte for an electrochromic device includes a polymer network, a plasticizer and an electrolyte salt containing at least one of lithium or sodium ions. The free-standing polymer electrolyte may exclude tetraglyme.

The use of materially-asymmetric electrodes in an electro-chromic (EC) cell having a single active layer that employs a water-based gel electrolytic material solves a problem that is exhibited during operation of conventionally-structured devices and that is caused by electrolysis of water in the gel and formation of gas bubbles inside the conventionally-structured devices, thereby substantially increasing the number of operational cycles such devices can be subjected to.

When transitioning an electrochromic (EC) device between two tint levels, a control unit may repeatedly adjust an applied voltage based on a stack voltage of the EC device. The stack voltage of the EC device may be measured and compared to a reference or target stack voltage. The stack voltage may be measured in any of various methods, such as by measuring it directly, via a measured equivalent series resistance, or via an open circuit voltage measurement. The applied voltage may then be changed or adjusted based on the measured stack voltage and the comparison of the stack voltage to the reference value. This process may be repeated multiple times and may essentially be performed continually until the stack voltage attains the desired level or at least attains a level within a predetermine threshold of the desired level.