A multi-section optical modulator and related method are disclosed wherein two waveguide arms traverse a plurality of successive modulating sections. A differential drive signal is applied separately to each waveguide arm of each modulating sections in synchronism with the transmission of light along the waveguide arms, affecting a dual differential driving of each section. By suitably selecting the number of modulating sections and the section length, a high modulation bandwidth and a high modulation efficiency may be achieved simultaneously for a given peak-to-peak voltage swing of the drive signal.

Optical modulators are described having a Mach-Zehnder interferometer and a pair of RF electrodes interfaced with the Mach-Zehnder interferometer in which the Mach-Zehnder interferometer comprises optical waveguides formed from semiconductor material. The optical modulator additionally comprises a plurality of phase shifters configured to interface with the plurality of interconnected optical waveguides such that at least one phase shifter of the plurality of phase shifters is interfaced with at least one optical waveguide of the plurality of interconnected optical waveguides. A phase shifter controller, including an energy source with a variable output controlled by the controller and a plurality of electrical connections connecting the energy source to each of the plurality of phase shifters, is also included. In various embodiments, the plurality of electrical connections are configured to provide approximately equal power to each of the phase shifting elements from the energy source.

An interface for an optical modulator and the optical modulator are described. The interface includes first and second differential line pairs. The first differential line pair has a first negative line and a first positive line arranged on opposing sides of a first waveguide. The first negative line is on a distal side of the first waveguide relative to a second waveguide. The first positive line is on a proximal side of the first waveguide relative to the second waveguide. The second differential line pair has a second negative line and a second positive line arranged on opposing sides of the second waveguide. The second negative line is on a distal side of the second waveguide relative to the first waveguide. The second positive line is on a proximal side of the second waveguide relative to the first waveguide. The first and second waveguides each include lithium niobate and/or lithium tantalate.

Embodiments described herein may be related to apparatuses, processes, and techniques directed to phase match and impedance match to enable a higher baud rate for ultra-high-speed TW-MZM for 100 Gbaud or above for PAM applications, and/or 120 Gbaud or above for QAM applications. Embodiments described herein may include ultra-high-speed TW-MZM based on differential signal-to-signal (SS) TW using a push-pull PN structure. These embodiments facilitate high speeds for a TW-MZM due to decreased complexity by eliminating a ground in the TW. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques directed to a multiple traveling waveguide structure to synthesize EO frequency responses used for optical modulation. Multiple traveling waveguide devices may include a plurality of traveling waveguides, each with different characteristics resulting in a different EO response within a target frequency range. These different characteristics may be achieved by varying the PN junction, PN doping level, optical waveguides, RF waveguides and the like for each traveling waveguide. The multiple traveling waveguide structure is formed by combining each traveling waveguide in a serial and/or parallel fashion, and then iteratively optimized based on artificial intelligence (AI) training sequences, to achieve an overall optical modulation beyond 100 GHz. Other embodiments may be described and/or claimed.

Provided is an optical modulator having an optical modulation high frequency line through which a high frequency electrical signal can be efficiently input to an optical modulation region and which is in a broadband. High frequency lines of an optical modulator, that is, an input high frequency line, an optical modulation high frequency line, and an output high frequency line have a line configuration in which each of the input high frequency line and the output high frequency line is divided into a plurality of segments, and adjacent segments of the plurality of the segments have different characteristic impedances and propagation constants. The input high frequency line and the output high frequency line may be implemented by changing a width or a thickness of a signal electrode formed on a dielectric forming a micro-strip line between adjacent segments. The characteristic impedances and the propagation constants may be changed by changing a dielectric constant of the dielectric instead of changing the width or the thickness of the signal electrode.

Provided is an optical modulator that can be driven at lower voltage through the use of differential signal output. An optical modulator includes a substrate 1 and optical waveguides (21, 22) and a control electrode that are formed on the substrate, in which the optical waveguide includes Mach-Zehnder type optical waveguide, the control electrode is provided with two ground electrodes sandwiching three signal electrodes; the three signal electrodes are constituted by second and third signal electrodes that sandwich a first signal electrode, and have a wiring structure in which one modulation signal of the differential signal is applied to the first signal electrode, and the other modulation signal of the differential signal is applied to the second and third signal electrodes; and one branched waveguide (21) out of two Mach-Zehnder type optical waveguides is disposed between the first and second signal electrodes, and the other branched waveguide (22) is disposed between the first and third signal electrodes.

An optical modulator includes: a substrate; a waveguide layer including first and second optical waveguides formed of an electro-optic material film on the substrate to have a ridge shape and to be disposed adjacent to each other; an RF part that applies a modulated signal to the optical waveguides; and a DC part that applies a DC bias to the optical waveguides. The DC part includes: a buffer layer covering at least upper surfaces of the optical waveguides; a first bias electrode opposed to the first optical waveguide through the buffer layer; and a second bias electrode provided adjacent to the first bias electrode. A first DC bias voltage is applied between the first and second bias electrodes. A waveguide layer removal area in which at least part of the waveguide layer is removed is provided at least under an area between the first and second bias electrodes.

A predistorter for an electro-optical converter includes a plurality of low noise RF amplifiers distributed along a transmission line that receive an RF input. Second order intermodulation injection (IM2) circuitry includes an inductively-degenerated frequency doubler to square and filter IM2 products of the RF input. A Mach-Zehnder Modulator (MZM) is used for electro-optical conversion. Feed forward circuitry injects IM2 to independently propagate RF intermodulation components with velocity matching to the MZM. At least one driver injects the RF input and RF intermodulation components into the MZM.

Semiconductor electro-optical modulators which receives an input optical signal and provides a modulated output optical signal based on an input electrical signal are disclosed. The semiconductor electro-optical modulator may comprise at least one electrical transmission line adapted to carry the input electrical signal and a semiconductor electro-optical phase shifter waveguide electrically coupled to the at least one electrical transmission line. An optical path length of the semiconductor electro-optical phase shifter waveguide between a modulation begin plane of the semiconductor electro-optical modulator and a modulation end plane of the semiconductor electro-optical modulator may be greater than an electrical path length of the electrical transmission line between the modulation begin plane of the semiconductor electro-optical modulator and the modulation end plane of the semiconductor electro-optical modulator.