Optical switch and modulator devices are described, usable for Terahertz data communication rates. The device comprising an optically transmissive substrate configured for propagating electromagnetic radiation therethrough and a metamaterial arrangement optically coupled to said substrate. The metamaterial arrangement comprises at least one layer of metamaterial particles optically coupled to at least some portion of said optically transmissive substrate, and at least one nanomesh layer made of at least one electrically conducting material placed over at least some portion of the at least one metamaterial layer. The at least one nanomesh layer configured to discharge electrons into the at least one metamaterial layer responsive to electromagnetic or electric signals applied to the metamaterial arrangement, and the at least one metamaterial layer configured to change from an optically opaque state into an optically transparent state upon receiving the discharged electrons, to thereby at least partially alter electromagnetic radiation passing through the substrate.

An example device in accordance with an aspect of the present disclosure includes a diamond waveguide disposed on a substrate. The substrate includes a dielectric material. A tuner is to extend from the substrate, and is disposed at least in part over the waveguide. The tuner includes a tuner electrode to control a variable distance between the tuner and the waveguide to vary an effective refractive index of the waveguide.

Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.

An optical device includes an optical waveguide formed of a crystal thin film having an electro-optic effect, an RF electrode configured to apply a high-frequency voltage to the optical waveguide, and a DC electrode configured to apply a DC voltage to the optical waveguide, wherein the RF electrode has a coplanar electrode configuration, and the DC electrode has a microstrip electrode configuration.

In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.

An optical device includes: a ground electrode having a ground potential; a thin film optical waveguide formed by a thin film substrate stacked on the ground electrode; a signal electrode that is arranged at a position facing the ground electrode across the thin film optical waveguide and that transmits a high frequency signal; and a dielectric that covers at least a part of an exposed surface of the signal electrode.

An optical resonant modulator based on coupling modulation, comprising a resonant structure with an embedded Mach-Zehnder interferometer that is differentially driven to induced amplitude modulation at the output port. The principle of coupling modulation enables high data/baud rates to be achieved in a photonic integrated circuit, e.g. silicon, footprint that is considerably smaller than that of a conventional traveling-wave Mach-Zehnder modulator, in particular by utilizing space saving features, such as ring resonator phase shifters and bend waveguide arms.

It is an object of the present invention to provide a technique for making it possible to reduce the size of a Mach-Zehnder type optical modulator. In a clad layer, provided are a plurality of first and second via holes along an optical waveguide. The Mach-Zehnder type optical modulator includes a first travelling wave electrode connected to a first semiconductor region through the plurality of first via holes, extending along the optical waveguide in a plan view to have a width which is wider and a length and a second travelling wave electrode connected to a second semiconductor region through the plurality of second via holes, extending along the optical waveguide in a plan view to have a width which is wider and a length.

In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.

An active optical modulator receives a radio frequency signal and provides an intensity modulated optical signal. The optical modulator is formed on a substrate having a doped region. An interferometer is formed on the substrate having a first path and a second path. A low noise amplifier receives the radio frequency signal and provides an electrical field to the paths. A signal laser provides an optical signal to the interferometer which is modulated and interfered to produce an intensity modulated optical signal. A pump laser provides an optical gain signal to the interferometer where it adds gain to the optical signal in the interferometer by interaction with the doped region of the substrate.