Electro-optic (EO) modulators are disclosed. The EO modulators include a substrate and an EO material layer disposed over the substrate. The EO material layer and the substrate provide an optical waveguide having an optical group velocity (OGV). The EO modulators also include electrodes disposed over the EO material layer to provide a coplanar waveguide (CPW). The CPW has a radio-frequency (RF) phase velocity, and the electrodes have a gap therebetween. The EO modulators also include a superstrate disposed over the EO material layer and configured to be raised and lowered, or disposed and removed to tune the RF phase velocity to be substantially the same as the OGV, wherein a space exists between the superstrate and the EO material.

There is provided an optical waveguide device including a substrate, an optical waveguide formed on the substrate, and a working electrode that controls a light wave propagating through the optical waveguide, in which the working electrode includes a first base layer made of a first material, and a first conductive layer on the first base layer, and a conductor pattern including a second base layer made of a second material different from the first material and a second conductive layer on the second base layer is formed in a region other than a path from an input end to an output end of the optical waveguide, in a region on the substrate.

There is provided an optical waveguide device including: a substrate; an optical waveguide formed on the substrate; and a working electrode that controls a light wave propagating through the optical waveguide, in which the working electrode includes a first base layer made of a first material, a first conductive layer on the first base layer, a second base layer made of a second material different from the first material, which is on the first conductive layer, and a second conductive layer on the second base layer, and an edge of the second base layer is covered with the second conductive layer, in a cross-section perpendicular to an extending direction of the optical waveguide.

Improved dither detection, measurement, and voltage bias adjustments for an electro-optical modulator are described. The electro-optical modulator generally includes RF electrodes and phase heaters interfaced with semi-conductor waveguides on the arms of Mach-Zehnder interferometers, where a processor is connected to output a bias tuning voltage to the electro-optical modulator for controlling optical modulation. A variable gain amplifier (VGA) can be configured with AC coupling connected to receive a signal from a transimpediance amplifier (TIA) that is configured to amply a photodetector signal from an optical tap that is used to measure an optical signal with a dither signal. The analog to digital converter (ADC) can be connected to receive output from the VGA. The processor can be connected to receive the signal from the ADC and to output the bias tuning voltage based on evaluation of the signal from the tap.

In an optical waveguide element which uses a rib type optical waveguide, light propagating in the rib type optical waveguide is monitored stably and accurately. The optical waveguide element includes a rib type optical waveguide provided on a optical waveguide substrate and configured of a convex portion protruding in a thickness direction of the optical waveguide substrate and extending in a plane direction of the optical waveguide substrate, and a light receiving element configured of a light receiving part formed on a light receiving element substrate disposed on the rib type optical waveguide and configured to receive at least a part of light propagating through the rib type optical waveguide, and the light receiving element substrate is supported by at least one first convex portion having the same height as that of the rib type optical waveguide provided on the optical waveguide substrate.

To provide an optical modulation element whereby reduced drive voltage and suppression of DC drift can be obtained at the same time. An optical modulation element includes: a substrate; and an optical waveguide formed of an electrooptic material film formed on the substrate and having a ridge part which is a protruding portion, and a slab part having a smaller film thickness than the ridge part 11r. The optical waveguide includes a first waveguide part having a first ridge width and a first slab film thickness and to which an RF signal is applied, and a second waveguide part having a second ridge width and a second slab film thickness different from the first slab film thickness and to which a DC bias is applied.

An optical device includes an optical waveguide that is a rib type and that is formed of a thin film lithium niobate (LiNbO.sub.3: LN) substrate using a thin film LN crystal, and a buffer layer that is laminated on the optical waveguide. Furthermore, the optical device includes an electrode that is laminated on the buffer layer and that applies a voltage to the optical waveguide, and a gettering site that is disposed parallel to the optical waveguide and that traps an electric charge inside the optical waveguide.

An optical module includes: a Peltier module; an optical semiconductor element mounted on the Peltier module; and a driver that drives high-frequency lines of the optical semiconductor element. The optical semiconductor element includes: optical circuits providing a function of an optical interferometer and the high-frequency lines. Cooling performance of the Peltier module in a region in vicinity of the driver is higher than the cooling performance in other regions.

Optical modulators are described having a Mach-Zehnder interferometer and a pair of RF electrodes interfaced with the Mach-Zehnder interferometer in which the Mach-Zehnder interferometer comprises optical waveguides formed from semiconductor material. The optical modulator also comprises a ground plane spaced away in a distinct plane from transmission line electrodes formed from the association of the pair of RF electrodes interfaced with the Mach-Zehnder interferometer. The ground plane can be associated with a submount in which an optical chip comprising the Mach-Zehnder interferometer and the pair of RF electrodes is mounted on the submount with the two semiconductor optical waveguides are oriented toward the submount. Methods for forming the modulators are described.

The invention relates to an optical modulator. The optical modulator comprising: a substrate; an electro-optical material layer formed on a predetermined region of the substrate; a buffer layer formed on the substrate which is provided so as to cover the electro-optical material layer; and an electrode formed on the buffer layer, and the electro-optical material layer has a RF portion optical waveguide which is applied with a modulation signal and is patterned, and a DC portion optical waveguide which is applied with a DC voltage and is patterned, the electrode has an RF portion electrode formed on the buffer layer where the RF portion optical waveguide is located and a DC portion electrode formed on the buffer layer where the DC portion optical waveguide is located, the film thickness of the DC portion electrode is smaller than the film thickness of the RF portion electrode. According to the present invention, an optical modulator which can suppress electrical crosstalk caused by the noise signal generated in the DC portion electrode and can improve high-frequency characteristics and achieve a widening of bandwidth of the optical frequency band in the high-frequency signals propagating in the RF portion electrode is provided.