A silicon optical modulator includes a silicon-on-insulator substrate and a first waveguide and a second waveguide arranged parallel to each other in the silicon-on-insulator substrate. The first waveguide includes a first PN junction. The second waveguide includes a second PN junction. At least one of the first PN junction and the second PN junction is disposed at an interface between a P type doped region and a N type doped region. The interface has an irregular shape that is not perpendicular to a plane in which the silicon-on-insulator substrate lies.

An optical modulator includes: an optical waveguide element including an optical waveguide formed on a substrate and a signal electrode for controlling a light wave propagating through the optical waveguide; a drive circuit for outputting two high-frequency signals; and two terminating resistors for respectively terminating outputs of the two high-frequency signals from the drive circuit. The output of one of the high-frequency signals of the drive circuit propagates through the signal electrode of the optical waveguide element and is terminated by a first terminating resistor which is one of the terminating resistors. The output of the other of the high-frequency signals of the drive circuit is terminated by a second terminating resistor which is the other of the terminating resistors. A resistance value of the second terminating resistor is greater than a resistance value of the first terminating resistor.

An optical interferometer device is provided including a waveguide interferometer. The waveguide interferometer includes first and second waveguide arms in a waveguide plane, each waveguide arm including a n-type region and a p-type region forming a junction. The n-type region and the p-type region of the second waveguide arm are translationally symmetric with respect to the n-type region and the p-type region, respectively, of the first waveguide arm in the waveguide plane.

High bandwidth (e.g., > 100 GHz) modulators and methods of fabricating such are provided. An optical modulator comprises transmission lines configured to provide a respective radio frequency signal to a respective plurality of segmented capacitive loading electrodes; pluralities of segmented capacitive loading electrodes in electrical communication with a respective one of the transmission lines and in electrical communication with an interface layer of a semiconductor waveguide structure; and the semiconductor waveguide structure. The semiconductor waveguide structure is configured to modulate an optical signal propagating therethrough based at least in part on the respective radio frequency signal. The semiconductor waveguide structure comprises the interface layer, which (a) comprises a semiconductor material and (b) is configured such that an interface resistance of the modulator is ≤ 4 Ohms. The interface resistance is a serial resistance between the interface layer and respective electrodes of the pluralities of segmented capacitive loading electrodes.

An optical modulator circuit includes first and second electrodes, first and second p-n junction segments (PNJSs), and first and second optical waveguides. The first PNJS includes a first modulating p-n junction (MPNJ) in series with a first non-modulating device (NMD) that are connected to the first and second electrodes, respectively, where the first NMD includes a first substantially larger capacitance than the first MPNJ. The second PNJS includes a second NMD in series with a second MPNJ that are connected to the first and second electrodes, respectively, where the second NMD includes a second substantially larger capacitance than the second MPNJ. The first and second optical waveguides superimpose the first and second MPNJs, respectively, where the first and second MPNJs are configured to modulate a refractive index of the first and second optical waveguides, respectively, based on the substantially larger capacitance of the first NMD and the second NMD.

A device and method of optical equalization using an optical modulator is provided. An electrical modulation signal is split into a first modulation signal and a second modulation signal. The second modulation signal is delayed relative to the first modulation signal. An amplitude of the second modulation signal is attenuated relative to the first modulation signal. The first modulation signal is applied to a first waveguide segment of the optical modulator. The second modulation signal that is delayed and attenuated relative to the first modulation signal is applied to a second waveguide segment of the optical modulator. Both the applied first and second modulation signals generate a feed-forward equalized optical signal that is recombined in the optical domain.

An electro-optic modulation structure 110, a method for fabrication of the electro-optic modulation structure, and a method of optical modulation derived from an electro-optic modulation structure with low voltage of operation are disclosed. The low voltage operation of the electro-optic modulator is realized by designed electro-optic modulation structures that include the light confining waveguide 114, overclad layer 120 and modulating electrode structure 116 for applying modulation voltages that are directed towards a low voltage operation of the electro-optic modulation 110 device upon consideration of optimal optical loss.

In an embodiment, a phase shifter includes: a light input end; a light output end; a p-type semiconductor material, and an n-type semiconductor material contacting the p-type semiconductor material along a boundary area, wherein the boundary area is greater than a length from the light input end to the light output end multiplied by a core width of the phase shifter.

A Mach-Zehnder modulator includes: a support having a principal surface, the principal surface having a first area, a second area, and a third area; a first structure including first and second semiconductor mesas disposed on the first and second areas, respectively; a second structure including a first strip-shaped semiconductor region on the second area, a second strip-shaped semiconductor region on the third area, and a first strip-shaped void and a second strip-shaped void defining the first and second strip-shaped semiconductor regions; a first electrode disposed on the first semiconductor mesa in the first area, the first strip-shaped semiconductor region of the second structure being disposed between the support and the second semiconductor mesa of the first structure in the second area, and the first and second semiconductor mesas, and the first and second strip-shaped semiconductor regions being arranged to constitute a first arm waveguide of the Mach-Zehnder modulator.

Structures for response shaping in frequency and time domain, include an optical response shaper and/or a modulator device with multiple injection. The device comprises a resonator having an enclosed geometric structure, for example a ring or racetrack structure, at least two injecting optical waveguides approaching the resonator to define at least two coupling regions between the resonator and the injecting waveguides, and may define at least two Free Spectral Range states. One or both of the coupling regions has a coupling coefficient selected for a predetermined frequency or time response, and the coupling coefficient or other device parameters may be variable, in some case in real time to render the response programmably variable.