An electro-optical modulator is provided. The electro-optical modulator comprises at least one optical waveguide, an electrode arrangement for applying a voltage across the optical waveguide. The electrode arrangement comprises a first and a second electrical line and at least two terminating resistors terminating the first and the second electrical line. The electrode arrangement comprises at least one capacitive structure that capacitively couples, but galvanically separates the two terminating resistors. The capacitive structure comprises at least two electrically conductive layers physically arranged at a position between the first and the second electrical line, wherein the at least two layers are separated by at least one dielectric layer.

The present invention provides an optical modulator including a substrate and a phase modulation portion on the substrate. The phase modulation portion includes an optical waveguide comprised of a first clad layer, a semiconductor layer that is laminated on the first clad layer and has a refraction index higher than the first clad layer and a second clad layer that is laminated on the semiconductor layer and has a refraction index lower than the semiconductor layer, a first traveling wave electrode, and a second traveling wave electrode. The semiconductor layer includes a rib that is formed in the optical waveguide in an optical axis direction and is a core of the optical waveguide, a first slab that is formed in the optical axis direction in one side of the rib, a second slab that is formed in the optical axis direction in the other side of the rib, a third slab that is formed in the first slab in the optical axis direction at the opposite side to the rib, and a fourth slab that is formed in the second slab in the optical axis direction at the opposite side to the rib. The first slab is formed to be thinner than the rib and the third slab, and the second slab is formed to be thinner than the rib and the fourth slab.

In photonic integrated circuits implemented in silicon-on-insulator substrates, non-conductive channels formed, in accordance with various embodiments, in the silicon device layer and/or the silicon handle of the substrate in regions underneath radio-frequency transmission lines of photonic devices can provide breaks in parasitic conductive layers of the substrate, thereby reducing radio-frequency substrate losses.

Remote measuring and sensing. Some example embodiment related to optical energy harvesting by identification device, such as infrared identification device GRID devices). Other embodiments relate to RFID device localization using low frequency source signals. Yet still other embodiments related to energy harvesting by RFID in electric fields in both conductive and non-conductive environments.

A frequency diverse distributed Mach-Zehnder Interferometer may include an optical modulator on a chip, with the modulator comprising a plurality of diodes arranged along a waveguide and with each diode driven by two or more drivers. An optical signal may be received in the waveguide, and a first modulating electrical signal may be applied to a first of the plurality of diodes using a first driver and a second modulating electrical signal may be applied to the first of the plurality of diodes using a second driver. The first electrical signal may be different from the second modulating electrical signal. The second electrical signal may have a larger voltage swing than the first electrical signal. The first electrical signal voltage swing may be 0.85 volts and the second electrical signal voltage swing may be 1.5 volts, for example. The first and second electrical signals may have different frequencies.

A linearly polarized upconverting optical signal at optical frequency ν.sub.OPT and a propagating input signal at frequency ν.sub.GHz are combined by an input beam combiner to copropagate through a nonlinear optical medium and generate upconverted optical signals at one or both sum or difference frequencies ν.sub.SUM=ν.sub.OPT+ν.sub.GHz or ν.sub.DIFF=ν.sub.OPT−ν.sub.GHz. The orthogonally polarized upconverting and upconverted optical signals are separated by a polarizer, and the upconverted optical signal is preferentially transmitted to a detection system by an optical filter. The input signal is modulated to encode transmitted information, and that modulation is imparted onto the upconverted optical signal. The detection system includes one or more photodetectors, receives the upconverted optical signal, and generates therefrom electrical signals that are modulated to encode the transmitted information.

An optical transmitter includes: a set of reflective semiconductor optical amplifiers (RSOAs) or other reflective gain media, a set of ring filters, a set of intermediate waveguides, a shared waveguide, a shared loop mirror, and an output waveguide. Each intermediate waveguide channels light from an RSOA in proximity to an associated ring filter to cause optically coupled light to circulate in the associated ring filter. The shared waveguide is coupled to the shared loop mirror, and is located in proximity to the set of ring filters, so that light circulating in each ring filter causes optically coupled light to flow in the shared waveguide. Each RSOA forms a lasing cavity with the shared loop reflector, wherein each lasing cavity has a different wavelength associated with a resonance of its associated ring filter. The output waveguide is optically coupled to the shared loop mirror and includes an electro-optical modulator.

A method of forming semiconductor device includes forming an active layer in a substrate including forming components of one or more transistors; forming an MD and gate (MDG) layer over the active layer including forming a gate line; forming a metal-to-S/D (MD) contact structure; and forming a waveguide between the gate line and the MD contact structure; forming a first interconnection layer over the MDG layer including forming a first via contact structure over the gate line; forming a second via contact structure over the MD contact structure; and forming a heater between the first and second via contact structures and over the waveguide.

Ring modulators based on interdigitated junctions may be driven in full or partial standing wave mode and, active regions (providing the modulation) and light-absorptive regions (e.g. providing electrical conduction) are placed in a pattern inside a resonant cavity in order to match the maxima and minima of the optical field, respectively. The pattern may be periodic to match the periodicity of a typical electromagnetic field which is periodic with the wavelength. It may also be aperiodic in the case that the cross-section or materials are engineered along the direction of propagation such that the propagation constant (and thus wavelength, i.e. optical wave “local periodicity”) change along the propagation direction.

A spot size converter includes: a first semiconductor waveguide structure having a first width enabling single mode propagation; a second semiconductor waveguide structure having a second width greater than the first width, a second semiconductor waveguide structure including an end face for optically coupling with an external waveguide; a third semiconductor waveguide structure having a third width greater than the first and second widths, the third semiconductor waveguide structure being optically coupled to the second semiconductor waveguide structure; and a single tapered waveguide having a first end portion connected to the third semiconductor waveguide structure, and a second end portion connected to the first semiconductor waveguide structure, the single tapered waveguide having a width gradually changing in a direction from the first end portion to the second end portion.