The present application relates to an apparatus for determining a position of at least one element on a photolithographic mask, said apparatus comprising: (a) at least one scanning particle microscope comprising a first reference object, wherein the first reference object is disposed on the scanning particle microscope in such a way that the scanning particle microscope can be used to determine a relative position of the at least one element on the photolithographic mask relative to the first reference object; and (b) at least one distance measuring device, which is embodied to determine a distance between the first reference object and a second reference object, wherein there is a relationship between the second reference object and the photolithographic mask.

The present application relates to an apparatus for determining a position of at least one element on a photolithographic mask, said apparatus comprising: (a) at least one scanning particle microscope comprising a first reference object, wherein the first reference object is disposed on the scanning particle microscope in such a way that the scanning particle microscope can be used to determine a relative position of the at least one element on the photolithographic mask relative to the first reference object; and (b) at least one distance measuring device, which is embodied to determine a distance between the first reference object and a second reference object, wherein there is a relationship between the second reference object and the photolithographic mask.

An optical system used in a charged particle beam inspection system. The optical system includes one or more optical lenses, and a compensation lens configured to compensate a drift of a focal length of a combination of the one or more optical lenses from a first medium to a second medium.

A system for imaging a sample through a protective pellicle is disclosed. The system includes an electron beam source configured to generate an electron beam and a sample stage configured to secure a sample and a pellicle, wherein the pellicle is disposed above the sample. The system also includes an electron-optical column including a set of electron-optical elements to direct at least a portion of the electron beam through the pellicle and onto a portion of the sample. In addition, the system includes a detector assembly positioned above the pellicle and configured to detect electrons emanating from the surface of the sample.

A system for imaging a sample through a protective pellicle is disclosed. The system includes an electron beam source configured to generate an electron beam and a sample stage configured to secure a sample and a pellicle, wherein the pellicle is disposed above the sample. The system also includes an electron-optical column including a set of electron-optical elements to direct at least a portion of the electron beam through the pellicle and onto a portion of the sample. In addition, the system includes a detector assembly positioned above the pellicle and configured to detect electrons emanating from the surface of the sample.

Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, columns of sensing mechanism are configured with different functions, weights and performances to inspect a sample to significantly reduce the time that would be otherwise needed when all the columns were equally applied.

The present application relates to an apparatus for processing a photolithographic mask, said apparatus comprising: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographic mask; (b) at least one first means for providing at least one precursor gas, wherein the precursor gas is embodied to interact with the particle beam during the local deposition reaction and/or the local etching reaction; and (c) at least one second means, which reduces a mean angle of incidence (φ) between the time-varying particle beam and a surface of the photolithographic mask.

The present application relates to an apparatus for processing a photolithographic mask, said apparatus comprising: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographic mask; (b) at least one first means for providing at least one precursor gas, wherein the precursor gas is embodied to interact with the particle beam during the local deposition reaction and/or the local etching reaction; and (c) at least one second means, which reduces a mean angle of incidence (φ) between the time-varying particle beam and a surface of the photolithographic mask.

According to one embodiment, an image data of a measurement object including a pattern is acquired. First data is acquired by extracting a contour of an element in composition of the pattern from the image data. Second data that specifies a design data of the measurement object and the pattern of the measurement object is acquired. The design data includes a pattern data. A measurement pattern is extracted by using the first data and the second data. An evaluation value for the measurement pattern with respect to the design data is calculated based on the difference between the measurement pattern and the design data.

A method involving obtaining a simulation of a contour of a pattern to be formed on a substrate using a patterning process, determining a location of an evaluation point on the simulated contour of the pattern, the location spatially associated with a location of a corresponding evaluation point on a design layout for the pattern, and producing electronic information corresponding to a spatial bearing between the location of the evaluation point on the simulated contour and the location of the corresponding evaluation point on the design layout, wherein the information corresponding to the spatial bearing is configured for determining a location of an evaluation point on a measured image of at least part of the pattern, the evaluation point on the measured image spatially associated with the corresponding evaluation point on the design layout.