Patent classifications
G03F7/0233
Photosensitive compositions and applications thereof
The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain multifunctional crosslinking agents, and two or more phenolic compounds which are resistant to thermo-oxidative chain degradation and exhibit improved mechanical properties.
PHOTOSENSITIVE RESIN COMPOSITION, DRY FILM, CURED MATERIAL AND ELECTRONIC COMPONENT
[Problem] To provide a photosensitive resin composition having high dissolution rate in the exposed area and excellent dissolution contrast (resolution).
[Solution] (A) a polyimide precursor which is a reaction product of diamine compound and dicarboxylic acid and (B) a photosensitive agent, the diamine compound comprising at least one selected from the group consisting of compounds represented by the formulae (1) and (2):
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Resin composition, resin sheet, cured film, organic el display device, semiconductor electronic component, semiconductor equipment, and method for producing organic el display device
The present invention provides a resin composition which is highly sensitive and exhibits high chemical resistance even in the case of being baked at a low temperature of 250° C. or less and can suppress the generation of outgas after curing. The present invention is a resin composition which contains (a) an alkali-soluble resin containing polyimide, polybenzoxazole, polyamide-imide, a precursor of any one of these compounds and/or a copolymer of these compounds and (b) an alkali-soluble resin having a monovalent or divalent group represented by the following general formula (1) in a structural unit and in which the modification rate of a phenolic hydroxyl group in the alkali-soluble resin (b) is 5% to 50%. ##STR00001##
(In general formula (1), O represents an oxygen atom. R.sup.1 represents a hydrogen atom or a hydrocarbon group which has 1 to 20 carbon atoms and may be substituted and R.sup.2 represents an alkyl group having 1 to 5 carbon atoms. s and t each independently represent an integer from 0 to 3. Provided that (s+t)≥1. d represents an integer from 0 to 2. u represents an integer from 1 to 2, and * represents a chemical bond.)
Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions
Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.
Photoresist composition, its manufacturing method, and manufacturing methods of metal pattern and array substrate
A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.
CHEMICALLY AMPLIFIED PHOTORESIST
The present invention relates to resist compositions comprising (A) a polymer component, (B) a photoacid generator component, (C) a photoactive diazonaphthoquinone component, and (D) a solvent. The polymer component comprises a mixture of a Novolak derivative and a polymer comprising hydroxystyrene repeat units. The polymer component comprises repeat units with free phenolic hydroxy moieties and repeat units with phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The positive photoresist composition is suitable for manufacturing electronic devices.
DNQ-TYPE PHOTORESIST COMPOSITION INCLUDING ALKALI-SOLUBLE ACRYLIC RESINS
Describe herein is a composition comprising: an acrylic polymer comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7) wherein these repeat units are present in said acrylic polymer in the mole % ranges as described herein; a Novolak resin having a dissolution rate in 0.26 N aqueous TMAH of at least 50 Å/sec; a diazonaphthoquinone (DNQ) photoactive compound (PAC); and an organic spin casting solvent, and a process of using said composition as a positive photoresist developable in aqueous base.
ORGANIC EL DISPLAY DEVICE, PRODUCTION METHOD FOR CURED PRODUCT, AND PRODUCTION METHOD FOR ORGANIC EL DISPLAY DEVICE
An object of the present invention is to provide an organic EL display device which does not undergo the decrease in luminance or pixel shrinkage and has excellent long-term reliability. The present invention is an organic EL display device constituting a cured product of a photosensitive resin composition containing an alkali-soluble resin (A) and a naphthoquinone diazide sulfonic acid ester compound (B), wherein an intensity ratio I.sub.(S)/I.sub.(TOTAL) is 0.0001 or more and 0.008 or less, where I.sub.(S) is a negative secondary ion intensity of sulfur, and I.sub.(TOTAL) is a sum total of negative secondary ion intensities of carbon, oxygen, fluorine, silicon and sulfur obtained by time-of-flight secondary ion mass spectrometry of the cured product. Alternatively, the present invention is a method for producing the cured product.
RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION
Provided is a resist composition which contains a resin (A) and a solvent (B) that contains a compound (B1) represented by general formula (b-1), wherein the content of the active ingredients based on the total amount of the resist composition is 45% by mass or less.
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(In formula (b-1), R.sup.1 represents an alkyl group having from 1 to 10 carbon atoms.)
Positive-type photosensitive resin composition and cured film prepared therefrom
The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The positive-type photosensitive resin composition comprises a nonpolar organic solvent, thereby suppressing the reactivity of the epoxy group in the composition to reduce the production of diol compounds. When a cured film is prepared from the composition, an appropriate level of developability can be maintained to further enhance the pattern adhesiveness, resolution, and sensitivity. Further, since the composition of the present invention has a small difference in the film retention rates at room temperature and low temperatures, the composition may have stable stability over time.