A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.

A polymer capable of securing pattern uniformity in a photoresist pattern, the polymer containing a photoacid generator by including a structure unit represented by Chemical Formula 1a; and a structure unit represented by Chemical Formula 1b as shown in the specification.

Embodiments in accordance with the present invention encompass self-imagable polymer compositions containing a colorant which are useful for forming films that can be patterned to create structures for color filters and microlens having applications in a variety of microelectronic devices, optoelectronic devices and displays, such as for example image sensors. The compositions of this invention can be tailored to form positive tone images for forming an array of images, which can be thermally transformed into an array of microlens. The images thus formed can then be used in color filter applications.

A resist composition comprising a base polymer and a sulfonium salt of a carboxylic acid having an iodine or bromine-substituted hydrocarbyl group offers a high sensitivity, minimal LWR and improved CDU, independent of whether it is of positive or negative tone.

A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin are provided. The compounds and materials can provide for high solubility in a safe solvent.

A compound represented by Chemical Formula 1, a photoresist composition comprising the same, a photoresist pattern comprising the same, and a method for preparing a photoresist pattern

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Embodiments in accordance with the present invention encompass photosensitive compositions containing a base soluble polymer, a latent base catalyst, a photoactive compound and an epoxy crosslinking agent. The compositions are useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays. In some embodiments the compositions of this invention are shown to feature excellent hitherto unachievable mechanical properties. More specifically, the compositions exhibit increased photo speed, higher elongation to break, higher tensile strength and higher glass transitions temperatures than the conventional compositions, among other enhanced properties. Accordingly, the positive images formed therefrom exhibit improved thermo-mechanical properties, among other property enhancements.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a sulfonamide having an iodized aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and improved CDU, and forms a pattern of good profile after exposure and development.

The present specification provides a compound, a photoresist composition comprising the same, a photoresist pattern comprising the same, and a method for preparing a photoresist pattern.

A resist composition is provided comprising a base polymer containing an iodized polymer, and an acid generator containing a sulfonium salt and/or iodonium salt of iodized benzene ring-containing fluorosulfonic acid. When processed by lithography, the resist composition exhibits a high sensitivity, low LWR and improved CDU independent of whether it is of positive tone or negative tone.