A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin.

Various polycycloolefinic polymers containing phenolic pendent groups and compositions thereof useful for forming self-imageable films encompassing such polymers are disclosed. Such polymers encompass norbornene-type repeating units containing phenolic pendent groups which contain very low levels of fluorine containing monomers. The films formed from such polymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices.

A photoresist includes a group which will decompose that is attached to a hydrocarbon backbone at multiple points along the hydrocarbon chain. With such an attachment, the group which will decompose will cleave from one point in order to generate a desired shift in polarity while still remaining bonded to the hydrocarbon backbone. This prevents the group which will decompose from leaving the photoresist, thereby reducing or eliminating volume losses associated with exposure and post-exposure baking.

Embodiments in accordance with the present invention encompass self-imagable polymer compositions containing a variety of photobase generators which are useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays. The compositions of this invention can be tailored to form positive tone or negative tone images depending upon the intended application in aqueous developable medium. The images formed therefrom exhibit improved properties including low wafer stress and better thermo-mechanical properties, among other property enhancements.

A micro pattern manufacturing method includes a first process for forming a photosensitive resin layer on a substrate, and a second process for exposing and developing the photosensitive resin layer to form a micro pattern, wherein the photosensitive resin layer is formed by using a photosensitive resin compound containing an epoxy resin, a fluorine compound, a photocationic polymerization initiator, and a solvent, and wherein a boiling or sublimation point of the fluorine compound is 200? C. or higher, the solvent contains an ester solvent, and a ratio of the ester solvent to the entire solvent is equal to or larger than 5% by mass.

Provided are a resin film which exhibits an excellent low reflectivity, a coloring photosensitive composition capable of forming a resin film which exhibits an excellent low reflectivity, a resin film production method, a color filter, a light shielding film, a solid-state imaging element, and an image display device. The resin film of the present invention includes at least two or more resins, a coloring agent, and a photoacid generator, in which the resin film has a peak at which the value of A1/A2 is greater than 0.1 and 2.5 or less in a light scattering measurement of the resin film, in the case where a half-width of the peak is A1 and a scattering angle of a maximum light intensity of the peak is A2 in a spectrum in which a scattering angle is plotted on the horizontal axis and a scattered light intensity is plotted on the vertical axis.

A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

##STR00001##

The present invention provides a resist composition containing a base resin composed of a polymer compound having a repeating unit in which a hydrogen atom of a carboxyl group is substituted with one or more acid-labile groups selected from groups shown by the following general formulae (1-1) to (1-5), ##STR00001##
wherein R.sup.1 to R.sup.5 represent a linear, branched, or cyclic alkyl group having 1 to 4 carbon atoms, an alkenyl group having 2 to 4 carbon atoms, or an alkynyl group having 2 to 4 carbon atoms; R.sup.6 represents a hydroxyl group or an alkoxy group or acyloxy group having 1 to 6 carbon atoms; and m represents 1 or 2. There can be provided a resist composition that can improve the dissolution contrast of a resist film and reduce the film shrinkage after PEB, and a patterning process using the same.

A patternable layer is formed over a substrate. A photo-sensitive layer is formed over the patternable layer. The photo-sensitive layer contains an additive. The additive contains at least a floating control chemical and a volume control chemical. A spin drying or a baking process is performed to the photo-sensitive layer. The floating control chemical causes the additive to rise upward during the spin drying or baking process. Thereafter, as a part of an extreme ultraviolet (EUV) lithography process, the photo-sensitive layer is exposed. One or more outgassing chemicals are generated inside the photo-sensitive layer during the exposing. The volume control chemical is sufficiently voluminous and dense to trap the outgassing chemicals inside the photo-sensitive layer.

Embodiments in accordance with the present invention encompass self-imageable polymer compositions containing a variety of photobase generators which are useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays. The compositions of this invention can be tailored to form positive tone or negative tone images depending upon the intended application in aqueous developable medium. The images formed therefrom exhibit improved properties including low wafer stress and better thermo-mechanical properties, among other property enhancements.