A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2). ##STR00001##

A sulfonic acid derivative, wherein the sulfonic acid derivative is represented by the following general formula (1):

R.sup.1COOCH.sub.2CH.sub.2CFHCF.sub.2SO.sub.3.sup.−M.sup.+  (1)

where: R.sup.1 represents a monovalent organic group having carbon number of 1 to 200, having at least one hydroxyl group and optionally having a substituent other than the hydroxyl group; and M.sup.+ represents a counter cation.

A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.

A positive resist composition comprising a base polymer comprising recurring units having a carboxyl group whose hydrogen is substituted by a pyridine ring-containing tertiary hydrocarbyl group.

A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R.sup.3 is an acid-dissociable group; and R.sup.41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of R.sup.f1 and R.sup.f2 is a fluorine atom or a fluoroalkyl group; R.sup.5a is a monovalent organic group having a cyclic structure; X.sub.1.sup.+ is a monovalent onium cation; R.sup.5b is a monovalent organic group, and X.sub.2.sup.+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure. ##STR00001##

A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,

WX).sub.n   (1)

W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10,

##STR00001##

The dotted line represents a bonding arm. R.sup.01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

A radiation-sensitive resin composition includes a polymer and a compound. The compound includes a first structural unit including an aromatic carbon ring to which no less than two hydroxy groups bond, and a second structural unit including an acid-labile group which is dissociable by an action of an acid to give a carboxy group. The compound is represented by formula (1). R.sup.1 represents a monovalent organic group having 1 to 30 carbon atoms; and X.sup.+ represents a monovalent radiation-sensitive onium cation. A weight average molecular weight of the polymer is no greater than 10,000.

R.sup.1—COO.sup.−X.sup.+  (1)

A method for manufacturing a chemically amplified photosensitive composition capable of reducing a foreign matter derived from a sulfur-containing compound. The method includes an acid generating agent which generates an acid by irradiation with an active ray or radiation, a sulfur-containing compound which is a solid at room temperature, a first solvent having a Hansen solubility parameter in which a polar term δp is 10 (MPa.sup.0.5) or more, and a second solvent which is different than the first solvent, the method including preparing a solution of the sulfur-containing compound by dissolving the sulfur-containing compound in the first solvent, and blending the solution of the sulfur-containing compound, the acid generating agent, and the second solvent.

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) which contains a repeating unit (a1) having a specific ring structure, a compound (B) which generates an acid by an irradiation with an actinic ray or a radiation, and a specific compound (C) which is decomposed by an irradiation with an actinic ray or a radiation so that an acid-trapping property is lowered; an actinic ray-sensitive or radiation-sensitive film formed of the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition; and a method for manufacturing an electronic device.

Disclosed are a salt represented by formula (I), an acid generator, and a resist composition:

##STR00001##

wherein R.sup.1, R.sup.2 and R.sup.3 each represent a hydroxy group, *—O—R.sup.10, *—O-L.sup.10-CO—O—R.sup.10, etc.; L.sup.10 represents an alkanediyl group; R.sup.10 represents an acid-labile group; R.sup.4 to R.sup.9 each represent a halogen atom, a haloalkyl group, etc.; A.sup.1, A.sup.2 and A.sup.3 each represent a hydrocarbon group, etc.; m1 and m7 represent an integer of 0 to 5, m2 to m6, m8 and m9 represent an integer of 0 to 4, 0≤m1+m7≤5, 0≤m2+m8≤4, 0≤m3+m9≤4, and at least one of m1, m2 and m3 represents an integer of 1 or more; X.sup.4 represents a single bond, —CH.sub.2—, etc.; and Al.sup.− represents an organic anion.