A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more,
A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)  Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

A resist composition including a compound represented by formula (bd1), a total amount of the acid-generator component and the basic component being 20 to 70 parts by weight, relative to 100 parts by weight of the base material component. In the formula, Rx.sup.1 to Rx.sup.4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rx.sup.1 to Rx.sup.4 may be mutually bonded to form a ring structure; Ry.sup.1 and Ry.sup.2 represents a hydrogen atom or a hydrocarbon group, or Ry.sup.1 and Ry.sup.2 may be mutually bonded to form a ring structure; Rz.sup.1 to Rz.sup.4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rz.sup.1 to Rz.sup.4 may be mutually bonded to form a ring structure; provided that at least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1, Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anionic group; and M.sup.m+ represents an m-valent organic cation). ##STR00001##

A resist composition including: a base material component (A), a compound (B1) represented by Formula (b1-1), and a fluorine additive component (F) which contains a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (b1-1), V.sup.b01 represents a fluorinated alkylene group, R.sup.b02 represents a fluorine atom or a hydrogen atom, a total number of fluorine atoms as V.sup.b01 and R.sup.b02 is 2 or 3; in Formula (f-1), Rf.sup.1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf.sup.2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group. ##STR00001##

A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: ##STR00001##
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

A fluorocarboxylic acid-containing polymer comprising recurring units having formula (A1), but not acid labile group-containing recurring units is provided. A resist composition comprising the same offers a high sensitivity and is unsusceptible to nano-bridging or pattern collapse independent of whether it is of positive or negative tone. ##STR00001##

A sulfonium salt represented by a following general formula (1),

##STR00001##

wherein in the general formula (1), each of R.sup.1 to R.sup.3 is independently an alkyl group, an aryl group, or a heteroaryl group;

at least one carbon-carbon single bond contained in the alkyl group is optionally substituted with a carbon-carbon double bond or a carbon-carbon triple bond;

at least one methylene group contained in the alkyl group is optionally substituted with at least one divalent heteroatom-containing group;

Ar.sup.1 is an arylene group;

at least one of R.sup.1, R.sup.2, R.sup.3 and Ar.sup.1 has at least one substituent (R);

at least two of R.sup.1 to R.sup.3, Ar.sup.1, and substituent (R) optionally form a ring;

A is a divalent group selected from a group consisting of —S—, —SO—, and —SO.sub.2—;

Ar.sup.1 is substituted with A at an ortho-position with respect to a sulfonio group (S.sup.+); and

X.sup.− is an anion.

The present invention is a positive resist material containing: an acid generator being a sulfonium salt of a sulfonate ion bonded to a polymer main chain; and a quencher being a sulfonium salt shown by the following general formula (1). R.sup.1 represents a fluorine atom, phenyl group, phenyloxycarbonyl group, alkyl group, alkoxy group, alkenyl group, alkynyl group, or alkoxycarbonyl group. Hydrogen atoms of these groups are optionally substituted. R.sup.2 to R.sup.4 each independently represent a halogen atom or hydrocarbyl group. R.sup.2 and R.sup.3, or R.sup.2 and R.sup.4, are optionally bonded with each other to form a ring with a sulfur atom that is bonded thereto. Thus, the present invention provides: a positive resist material having higher sensitivity than conventional positive resist materials, and having little edge roughness (LWR) and dimensional variation (CDU) in an exposure pattern; and a patterning process using the positive resist material.

##STR00001##

A resist composition comprising a polymer is provided, the polymer comprising repeat units derived from a sulfonium or iodonium salt having a nitro-substituted benzene ring in a linker between a polymerizable unsaturated bond and a fluorosulfonic acid site. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A monomer has the structure

##STR00001##

wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M.sup.+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): ##STR00001##
wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.